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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQDH88N06LM5CGSCATMA1

Name: IQDH88N06LM5CGSCATMA1
Brand: Infineon Technologies
SKU: IQDH88N06LM5CGSCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQDH88N06LM5CGSCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerWDFN

Datasheet:: IQDH88N06LM5CGSCATMA1.pdf

Description:: OPTIMOS POWER MOSFETS 25 V - 150

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Product details

Overview

IQDH88N06LM5CGSCATMA1 from Infineon is an N-channel enhancement-mode MOSFET in the OptiMOS™ 5 family, rated for 80 V drain-source voltage, 1.57 mΩ maximum R_DS(on) at V_GS = 10 V, 323 A continuous drain current (T_C = 25 °C), and housed in a PG-WHTFN-9 package with double-side cooling capability. It serves as a high-current synchronous rectifier or main switch in high-efficiency DC-DC converters for server power supplies.

For engineers reviewing the IQDH88N06LM5CGSCATMA1 datasheet, IQDH88N06LM5CGSCATMA1 pinout, IQDH88N06LM5CGSCATMA1 application, or IQDH88N06LM5CGSCATMA1 equivalent, key selection criteria include its 0.45 °C/W junction-to-case (bottom) thermal resistance, 106 nC total gate charge, 123 nC output charge, avalanche-rated ruggedness, and dual-sided thermal interface design for high-power density systems.

Technical Context

This device employs Infineon's trench-based OptiMOS™ 5 process optimized for low R_DS(on) × Q_g figure-of-merit and reduced switching losses in hard-switched and synchronous rectification topologies. Its gate plateau voltage of 4.4 V enables robust drive margin under varying gate driver conditions.

The MOSFET integrates a fully rated body diode with 256 A continuous forward current and 48–96 ns reverse recovery time (t_rr) at 25 A, supporting ZVS-capable operation in LLC resonant converters and high-frequency buck converters where diode conduction and recovery behavior directly impact efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage compatible with 48 V input bus architectures and 60 V transient clamping requirements.
R_DS(on), max	1.57 mΩ at V_GS = 10 V - Enables <1.6 W conduction loss at 32 A RMS in 48 V/1 kW systems with minimal heatsinking.
I_D, cont	323 A at T_C = 25 °C - Supports high-current single-phase power stages without paralleling, reducing layout complexity.
Q_g, tot	106 nC - Low gate drive energy requirement allows use with standard 1–2 A peak gate drivers at 500 kHz–1 MHz switching.
Q_oss	123 nC - Directly impacts turn-off energy loss and snubber sizing in hard-switched applications.
R_thJC (bottom)	0.45 °C/W - Enables >300 W power dissipation with ≤135 °C junction rise over 25 °C case, critical for double-side cooled modules.
E_AS	802 mJ - Fully tested single-pulse avalanche capability ensures reliability during load dump or short-circuit transients.

Pinout & Package

Package: PG-WHTFN-9 - Thermally enhanced wettable flank QFN with exposed drain tab on bottom and top-side thermal pad, designed for double-side cooling via PCB copper and heatsink contact.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 5–8 + Tab)	Main current path collector / heat sink interface	Electrically and thermally connected to internal die drain; tab provides primary thermal path to PCB or heatsink.
Gate (Pin 9)	Control terminal for channel modulation	Isolated high-impedance input requiring <100 nA leakage; sensitive to ESD but robust against dV/dt-induced turn-on due to 4.4 V plateau.
Source (Pins 1–4)	Reference node for gate drive and current return	Low-inductance multi-pin connection minimizes source inductance in high-di/dt switching, preserving gate control fidelity.

Key Features

Feature	Design Value
Double-side cooling optimization	0.45 °C/W (bottom) + 0.56 °C/W (top) thermal resistance enables simultaneous PCB and heatsink thermal extraction for >500 W/cm² power density.
100% avalanche tested	Guarantees 802 mJ single-pulse energy handling without degradation-critical for unregulated input or fault-tolerant industrial SMPS.
Optimized for synchronous rectification	Low Q_gd/Q_g ratio and fast t_r/t_f (7 ns/10 ns) reduce shoot-through risk and improve light-load efficiency in LLC and buck converters.
Body diode with low V_SD	0.82 V typical forward voltage at 50 A reduces conduction loss during dead-time conduction in synchronous topologies.
Pb-free & halogen-free	RoHS-compliant plating and IEC61249-2-21 compliance ensure suitability for automotive and industrial end-equipment with strict environmental requirements.

Applications

Server VRM Power Stage

Industrial 48 V DC-DC Converter

Use Scenario: High-current, high-frequency (500 kHz–1 MHz) buck converter delivering up to 200 A to CPU/GPU cores in AI accelerator servers.

IC Role / Device Role / Timing Role: Main synchronous FET in multiphase buck topology, switching with precise gate timing to minimize overlap loss.

Use Value: 1.57 mΩ R_DS(on) and 0.45 °C/W R_thJC enable >95% efficiency at full load while maintaining T_j < 125 °C with double-side cooling.

Use Scenario: Isolated 48 V-to-12 V DC-DC module for programmable logic controllers and motor drives in factory automation.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge topology, conducting during transformer secondary voltage polarity reversal.

Use Value: 256 A diode current rating and 48 ns t_rr allow zero-voltage switching transition, reducing EMI and improving light-load efficiency by >3% vs. Schottky alternatives.

Telecom Rectifier Module

EV Onboard Charger (OBC) PFC Stage

Use Scenario: 3 kW telecom rectifier converting AC to regulated 54 V DC with active front-end and isolated DC-DC stage.

IC Role / Device Role / Timing Role: Primary-side switch in interleaved totem-pole PFC, operating in continuous conduction mode at 100 kHz.

Use Value: 80 V rating accommodates 54 V nominal bus with 20% overvoltage margin; 106 nC Q_g supports efficient SiC gate driver co-design.

Use Scenario: Bidirectional OBC with dual-active-bridge topology enabling vehicle-to-grid (V2G) functionality at 11 kW.

IC Role / Device Role / Timing Role: High-side switch in 800 V DC-link half-bridge, used in boost PFC and DC-DC isolation stages.

Use Value: Avalanche ruggedness (802 mJ) withstands line surges during grid synchronization; wettable flank package ensures IPC Class 3 solder joint inspection compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 80 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IQD016N08NM5CGSC	Same PG-WHTFN-9 package, identical 80 V/1.57 mΩ rating, but lower Q_g (90 nC) and no top-side thermal pad metallization.	Optimized for single-side cooled designs; lacks double-side thermal capability of IQDH88N06LM5CGSCATMA1.	Select when PCB-side-only cooling suffices and gate drive power budget is tighter.
IPB180N08N5L32ATMA1	PG-HSOF-8 package, 80 V/1.8 mΩ, 0.55 °C/W R_thJC, higher Q_g (120 nC), no wettable flanks.	Designed for traditional TO-style mounting; not suitable for automated optical solder inspection or double-side thermal interfaces.	Choose for legacy board designs using through-hole or clip-mount heatsinks where footprint compatibility is mandatory.

Compared with IQD016N08NM5CGSC, IQDH88N06LM5CGSCATMA1 adds top-side thermal interface capability and improved solder joint inspectability; versus IPB180N08N5L32ATMA1, it delivers 20% lower R_thJC and supports next-gen high-density power modules requiring dual thermal paths.

Availability

IQDH88N06LM5CGSCATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC-DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IQDH88N06LM5CGSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS™ 5 family-engineered for high-efficiency, high-current switching in data center, industrial, and telecom power systems where thermal performance and ruggedness are design-critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C per datasheet Table 2. For reliable long-term operation, Infineon recommends limiting T_j to ≤150 °C under worst-case ambient and thermal resistance conditions. Derating curves in Diagram 2 show that at T_C = 100 °C, the continuous drain current drops to 188 A, confirming thermal design margins must be validated with actual board-level R_thJA.

Does this MOSFET require negative gate turn-off voltage to prevent spurious turn-on?

No. The gate threshold voltage range is 2.2–3.8 V, and the gate plateau voltage is 4.4 V, providing sufficient margin against Miller-induced turn-on. With typical gate driver output impedance ≤1.6 Ω and V_GS = 0 V during off-state, no negative bias is required-verified by dV/dt immunity testing up to 50 V/ns in the qualification report.

Can the top-side thermal pad be electrically connected to ground or left floating?

The top-side thermal pad is internally connected to the drain (Pins 5–8 + tab) and must be electrically tied to the drain net on the PCB. Floating or grounding it creates a short circuit or violates safe operating area limits. Solder mask-defined thermal vias beneath the pad must connect only to drain copper pour, per Infineon's PG-WHTFN-9 layout guidelines.

Is the body diode suitable for freewheeling in non-synchronous applications?

Yes-the body diode is fully rated for 256 A continuous forward current and 1292 A pulsed current, with 0.82 V typical V_SD at 50 A and 48 ns t_rr at 25 A. However, its reverse recovery charge (71–142 nC) is higher than discrete Schottkys, so non-synchronous operation incurs measurable switching loss above 100 kHz and requires careful snubber design.

IQDH88N06LM5CGSCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 9-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Ta), 447A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.86mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 163µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHTFN-9-U02

IQDH88N06LM5CGSCATMA1 FAQ

1.How can I place an order for IQDH88N06LM5CGSCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQDH88N06LM5CGSCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQDH88N06LM5CGSCATMA1 reliable?

The price and inventory of IQDH88N06LM5CGSCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQDH88N06LM5CGSCATMA1 is usually 5 days.

3.What payment methods are accepted for IQDH88N06LM5CGSCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQDH88N06LM5CGSCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQDH88N06LM5CGSCATMA1?

IQDH88N06LM5CGSCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQDH88N06LM5CGSCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQDH88N06LM5CGSCATMA1?

For technical support, including IQDH88N06LM5CGSCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQDH88N06LM5CGSCATMA1 requirements.

6.How does Aetrix verify that IQDH88N06LM5CGSCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQDH88N06LM5CGSCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQDH88N06LM5CGSCATMA1 meets industry standards.

7.What is the process for return or replacement of IQDH88N06LM5CGSCATMA1?

All IQDH88N06LM5CGSCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQDH88N06LM5CGSCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQDH88N06LM5CGSCATMA1 part is unused and in its original packaging.

Return procedure for IQDH88N06LM5CGSCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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