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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQDH88N06LM5SCATMA1

Name: IQDH88N06LM5SCATMA1
Brand: Infineon Technologies
SKU: IQDH88N06LM5SCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQDH88N06LM5SCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: IQDH88N06LM5SCATMA1.pdf

Description:: OPTIMOS POWER MOSFETS 25 V - 150

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Product details

Overview

IQDH88N06LM5SCATMA1 from Infineon is an N-channel logic-level enhancement-mode MOSFET in PG-WHSON-8 package, rated for 60 V V_DS, 0.86 mΩ R_DS(on) at V_GS = 10 V, and 447 A continuous drain current at T_C = 25 °C. It features double-side cooling capability, 100% avalanche tested construction, and is optimized for high-efficiency synchronous rectification in server VRMs and telecom DC-DC converters.

For engineers reviewing the IQDH88N06LM5SCATMA1 datasheet, IQDH88N06LM5SCATMA1 pinout, IQDH88N06LM5SCATMA1 application, or IQDH88N06LM5SCATMA1 equivalent, key selection criteria include its ultra-low R_DS(on), dual thermal path design (R_thJC,bottom = 0.45 °C/W), gate charge profile (Q_g = 76 nC, Q_oss = 133 nC), and industrial-grade qualification per JEDEC.

Technical Context

This OptiMOS™ 5 device employs trench-gate superjunction architecture to achieve simultaneous low conduction loss and fast switching. Its gate threshold voltage (V_GS(th) = 1.1–2.3 V) enables direct drive from 3.3 V/5 V controllers, while the 0.56 °C/W top-side thermal resistance supports PCB-integrated heatsinking.

The integrated body diode exhibits t_rr = 44–88 ns and Q_rr = 49–98 nC at 25 A, making it suitable for hard-switched synchronous FET operation. Gate charge partitioning (Q_gs = 27 nC, Q_gd = 22 nC typ.) ensures controllable dV/dt and reduced EMI in high-frequency (>500 kHz) power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V input bus systems with 20 % margin
R_DS(on) max	0.86 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 400 A in VRM phase legs
I_D cont	447 A at T_C = 25 °C - Supports multi-phase parallel configurations without derating
Q_oss	133 nC - Low output charge reduces turn-off energy and improves light-load efficiency
R_thJC bottom	0.45 °C/W - Enables >300 W dissipation with 65 °C case rise on 40 mm × 40 mm copper area
t_r/t_f	8 ns / 16 ns at I_D = 50 A - Supports >1 MHz switching with minimal overlap loss
E_AS	1115 mJ - Robust single-pulse avalanche capability for overvoltage transients in unregulated supplies

Pinout & Package

Package: PG-WHSON-8 (exposed drain tab, 5 mm × 6 mm footprint), thermally enhanced with bottom- and top-side cooling paths. Drain connected to exposed metal tab (pins 5–8 + tab); gate on pin 4; source on pins 1–3.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1–3, Source	Source node connection	Low-inductance parallel routing for high di/dt return path; tied to PCB ground plane
Pin 4, Gate	Control terminal	Logic-level compatible input requiring <10 V drive; gate resistance R_G = 0.55 Ω internal
Pins 5–8 + Tab, Drain	Main power output	Exposed metal tab serves as primary drain connection and thermal interface to heatsink or PCB copper
Internal Body Diode	Integrated freewheeling path	Enables synchronous rectification without external diode; V_SD = 0.77 V typ. at 50 A

Key Features

Feature	Design Value
Double-side cooling design	Simultaneous thermal extraction via bottom (R_thJC = 0.45 °C/W) and top (R_thJC = 0.56 °C/W) interfaces enables compact 2-layer PCB layouts
Optimized gate charge profile	Q_gd/Q_g ratio of ~29 % ensures stable Miller plateau control and reduced switching overshoot in high-dV/dt environments
100 % avalanche tested	Each unit validated to withstand 1115 mJ single-pulse avalanche energy-critical for LLC resonant converter freewheeling stress
Logic-level gate drive	V_GS(th) range (1.1–2.3 V) guarantees full enhancement with 3.3 V microcontroller GPIO or PWM controller outputs

Applications

Server VRM Phase Legs

Telecom 48 V DC-DC Converters

Use Scenario: High-current, multiphase buck converters delivering up to 300 A to CPU/GPU cores in data center servers.

IC Role / Device Role / Timing Role: Synchronous FET in high-side or low-side position; switches at 300–600 kHz with precise dead-time control.

Use Value: 0.86 mΩ R_DS(on) cuts conduction loss by >35 % vs. prior-gen 1.2 mΩ devices, enabling 95.2 % peak efficiency at 200 A.

Use Scenario: Isolated or non-isolated point-of-load converters powering baseband units and optical line cards in 5G infrastructure.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward or secondary-side synchronous rectifier in LLC topology.

Use Value: 133 nC Q_oss and 44 ns t_rr reduce switching loss by 22 % at 1 MHz, supporting higher power density without forced air cooling.

Industrial Motor Drive Inverters

EV On-Board Charger (OBC) PFC Stages

Use Scenario: 3-phase inverter modules driving 5–15 kW permanent magnet motors in CNC machines and robotics.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid half-bridge; handles 300 A peak currents with 10 μs pulse width.

Use Value: 1788 A pulsed drain rating and 0.45 °C/W R_thJC allow sustained 10 s overload without thermal shutdown under 85 °C ambient.

Use Scenario: Boost PFC stage in 6.6 kW bi-directional OBCs operating from 90–264 VAC input.

IC Role / Device Role / Timing Role: Fast-switching boost switch with soft-start and overcurrent protection; operates at 65–130 kHz.

Use Value: 1115 mJ E_AS rating absorbs line surge energy during AC fault conditions, eliminating need for external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH8326TRPBF	R_DS(on) = 0.95 mΩ (10 V), Q_g = 82 nC, PG-TISON-8 package, no top-side cooling path	Limited to single-side cooling; requires larger copper area for same thermal performance	Select when cost sensitivity outweighs thermal density requirements and board space permits larger heatsink footprint
STL220N6F7	R_DS(on) = 0.75 mΩ (10 V), Q_g = 105 nC, H2PAK-7 package, higher gate charge increases switching loss	Higher Q_g degrades efficiency above 300 kHz; unsuitable for >500 kHz VRM designs	Prefer for lower-frequency (<200 kHz), high-current motor drives where conduction loss dominates

Compared with IRFH8326TRPBF and STL220N6F7, IQDH88N06LM5SCATMA1 delivers superior thermal density (dual cooling), lowest Q_oss-to-R_DS(on) ratio (155 nC/mΩ), and JEDEC industrial qualification-making it optimal for space-constrained, high-frequency, high-reliability power stages.

Availability

IQDH88N06LM5SCATMA1 is available at Aetrix Electronics and suitable for server VRM phase legs, telecom 48 V DC-DC converters, and industrial motor drive inverters requiring stable component supply across multi-year production cycles.

Supply support for IQDH88N06LM5SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to the OptiMOS™ 5 family-designed specifically for high-efficiency, high-current, high-frequency power conversion in data center, telecom, and industrial applications where thermal density and switching performance are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, and the device is rated for continuous operation up to this limit when case temperature is maintained within specification. Thermal design must ensure T_j ≤ 175 °C under worst-case load and ambient conditions, using the provided R_thJC values and measured T_C.

Is the exposed drain tab electrically isolated from the PCB mounting surface?

No-the exposed drain tab (pins 5–8 + metal pad) is electrically connected to the drain terminal and must be mounted on a non-isolated copper pour or heatsink. Electrical isolation requires use of insulating thermal interface material and careful layout to avoid shorting to adjacent ground planes.

Can this MOSFET be used in paralleled configurations without current-sharing resistors?

Yes-its positive temperature coefficient of R_DS(on) (normalized R_DS(on) rises with T_j) enables inherent current sharing. Layout symmetry, matched gate drive impedance, and identical thermal paths are required; typical designs achieve <5 % current imbalance across four parallel devices at full load.

Does the device support gate drive voltages below 4.5 V in practical operation?

Yes-V_GS(th) starts at 1.1 V, and R_DS(on) remains ≤ 1.24 mΩ at V_GS = 4.5 V and I_D = 50 A. However, full-rated 447 A current requires V_GS ≥ 10 V to maintain R_DS(on) ≤ 0.86 mΩ; operation at 4.5 V limits safe continuous current to ~271 A.

IQDH88N06LM5SCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Ta), 447A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.86mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 163µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHSON-8-U02

IQDH88N06LM5SCATMA1 FAQ

1.How can I place an order for IQDH88N06LM5SCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQDH88N06LM5SCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQDH88N06LM5SCATMA1 reliable?

The price and inventory of IQDH88N06LM5SCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQDH88N06LM5SCATMA1 is usually 5 days.

3.What payment methods are accepted for IQDH88N06LM5SCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQDH88N06LM5SCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQDH88N06LM5SCATMA1?

IQDH88N06LM5SCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQDH88N06LM5SCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQDH88N06LM5SCATMA1?

For technical support, including IQDH88N06LM5SCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQDH88N06LM5SCATMA1 requirements.

6.How does Aetrix verify that IQDH88N06LM5SCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQDH88N06LM5SCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQDH88N06LM5SCATMA1 meets industry standards.

7.What is the process for return or replacement of IQDH88N06LM5SCATMA1?

All IQDH88N06LM5SCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQDH88N06LM5SCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQDH88N06LM5SCATMA1 part is unused and in its original packaging.

Return procedure for IQDH88N06LM5SCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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