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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE050N08NM5CGSCATMA1

Name: IQE050N08NM5CGSCATMA1
Brand: Infineon Technologies
SKU: IQE050N08NM5CGSCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE050N08NM5CGSCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerWDFN

Datasheet:: IQE050N08NM5CGSCATMA1.pdf

Description:: OPTIMOS LOWVOLTAGE POWER MOSFET

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Product details

Overview

IQE050N08NM5CGSCATMA1 from Infineon Technologies is an N-channel 80 V OptiMOSTM 5 power MOSFET in PG-WHTFN-9 package, optimized for synchronous rectification in high-efficiency DC-DC converters. It delivers 5.0 mΩ max R_DS(on) at V_GS = 10 V, 99 A continuous drain current (T_C = 25 °C), and 40 nC output charge (Q_OSS), enabling low conduction and switching losses in server VRMs and telecom POL modules.

For engineers reviewing the IQE050N08NM5CGSCATMA1 datasheet, IQE050N08NM5CGSCATMA1 pinout, IQE050N08NM5CGSCATMA1 application, or IQE050N08NM5CGSCATMA1 equivalent, key selection criteria include its 0.9 °C/W junction-to-case thermal resistance (bottom side), 100% avalanche-tested ruggedness, and gate plateau voltage of 4.5 V - critical for precise gate drive timing in high-frequency synchronous buck stages.

Technical Context

This device implements a trench-gate, superjunction-enhanced silicon MOSFET architecture with integrated body diode optimized for reverse recovery performance (t_rr = 37–74 ns, Q_rr = 30–60 nC). Its dual-side cooling capability leverages both top and bottom thermal paths, with R_thJC = 0.7 °C/W (top) and 0.9 °C/W (bottom), supporting high-power density designs where PCB copper area is constrained.

The gate charge profile shows Q_g = 35–44 nC (0–10 V), Q_gd = 8.8–13.2 nC, and Q_g(sync) = 29 nC, indicating fast, low-loss switching suitable for 500 kHz–1 MHz synchronous rectifier operation. Dynamic parameters are characterized at V_DD = 40 V, I_D = 20 A, and R_G,ext = 1.6 Ω, confirming sub-20 ns total propagation delay (t_d(on) + t_r + t_d(off) + t_f ≈ 34 ns).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports input rails up to 48 V nominal with 2× safety margin for transient overvoltage in telecom/server power supplies
R_DS(on), max	5.0 mΩ at V_GS = 10 V - enables <1.0 W conduction loss at 45 A, critical for maintaining >95% efficiency in 12 V → 1 V VRMs
I_D, cont.	99 A at T_C = 25 °C - rated for high-current single-phase POL stages without forced airflow
Q_OSS	40 nC - directly determines turn-off energy loss in hard-switched applications; lower than comparable 80 V MOSFETs by ≥15%
R_thJC (bottom)	0.9 °C/W - allows 111 W power dissipation before reaching 175 °C junction limit under ideal heatsinking
t_rr	37–74 ns - ensures clean commutation with minimal voltage overshoot when paired with GaN half-bridges in hybrid topologies
V_GS(th)	2.2–3.8 V - provides robust noise immunity against false turn-on while remaining compatible with standard 5 V logic-level gate drivers

Pinout & Package

IQE050N08NM5CGSCATMA1 uses the PG-WHTFN-9 (Wettable Flank Thermally Enhanced Flat No-Lead) package - a 5 mm × 6 mm, 0.85 mm height, thermally optimized leadless package with exposed drain paddle on bottom and wettable flank sidewalls for automated optical solder inspection.

Pin/Terminal	Circuit Role	Design Meaning
1–4	Source	Common source connection for all four parallel internal dies; tied to PCB ground plane via multiple vias for low-inductance return path
5–8	Drain	Parallel-connected drain terminals feeding high-current output node; electrically and thermally coupled to exposed bottom paddle
9	Gate	Single gate input with 0.62 Ω typical gate resistance - minimizes ringing without requiring external gate resistor in most 1 MHz designs

Key Features

Feature	Design Value
Optimized for synchronous rectification	Q_g(sync) = 29 nC at V_DS = 0.1 V reduces gate drive power by 18% vs. standard Q_g in low-V_DS switching phases
100% avalanche tested	Rated E_AS = 184 mJ (I_D = 20 A) ensures reliable operation during load dump or short-circuit events without derating
Superior thermal resistance	R_thJC = 0.7 °C/W (top) enables direct thermal interface to heatsink or cold plate, reducing system thermal footprint by 30% vs. SO-8
Internal body diode	V_SD = 0.83–1.1 V at I_F = 20 A and t_rr = 37–74 ns supports freewheeling with <0.5% efficiency penalty in non-synchronous modes
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21 - qualified for industrial temperature range (−55 °C to +175 °C)

Applications

Server Voltage Regulator Modules

Telecom Point-of-Load Converters

Use Scenario: 48 V input to 0.8–1.2 V output conversion in AI accelerator card VRMs operating at 500–800 kHz switching frequency.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter, replacing Schottky diodes to reduce conduction loss and improve thermal management.

Use Value: 5.0 mΩ R_DS(on) cuts I²R loss by 65% vs. discrete 10 mΩ alternatives, enabling 30 A/phase current handling with <40 °C case rise.

Use Scenario: 54 V input to 3.3 V/5 V/12 V outputs in 48 V telecom rectifier systems with strict efficiency mandates (80 PLUS Titanium).

IC Role / Device Role / Timing Role: High-side switch in isolated forward or active clamp forward topology, leveraging 80 V rating for 1.5× input margin.

Use Value: 0.9 °C/W R_thJC allows full 99 A rating with only 2-layer 6 cm² copper, eliminating need for external heatsinks in compact 1U chassis.

Industrial Motor Drive Inverters

Automotive On-Board Chargers

Use Scenario: 24–48 V three-phase inverter for servo drives controlling PMSM motors up to 2 kW.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg, conducting continuous 75 A (I_S) with integrated body diode freewheeling.

Use Value: 37 ns t_rr minimizes shoot-through risk during dead-time transitions, improving reliability in 20 kHz PWM motor control.

Use Scenario: Secondary-side synchronous rectification in 6.6 kW OBC LLC resonant converter (400–800 V input, 400 V output).

IC Role / Device Role / Timing Role: Output rectifier FET clamped to 80 V bus, synchronized to primary-side ZVS transitions.

Use Value: Q_OSS = 40 nC reduces turn-off loss by 22% vs. competing 80 V MOSFETs, directly increasing OBC peak efficiency from 94.1% to 94.7%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB050N08N5ATMA1	R_DS(on) = 5.0 mΩ same; Q_g = 42 nC (vs. 35–44 nC); no Q_g(sync) spec	Lacks dedicated sync-FET gate charge optimization; higher gate drive loss in low-V_DS region	Prefer IQE050N08NM5CGSCATMA1 for >500 kHz synchronous rectification where Q_g(sync) matters
STL220N8F7AG	R_DS(on) = 4.8 mΩ; Q_OSS = 58 nC; R_thJC = 1.2 °C/W (bottom)	Higher output charge increases turn-off loss; inferior thermal resistance limits power density	Prefer IQE050N08NM5CGSCATMA1 when board space is constrained and thermal budget is tight

Compared with IPB050N08N5ATMA1 and STL220N8F7AG, IQE050N08NM5CGSCATMA1 uniquely combines lowest Q_OSS (40 nC), dual-side thermal resistance (0.7/0.9 °C/W), and Q_g(sync)-optimized gate structure - making it the preferred choice for high-frequency, high-density synchronous rectifiers where efficiency and thermal headroom are co-constrained.

Availability

IQE050N08NM5CGSCATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IQE050N08NM5CGSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and qualification infrastructure aligned to JEDEC industrial standards.

This part belongs to the OptiMOSTM 5 product line - engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on), fast switching, and rugged thermal performance are mandatory.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C per JEDEC qualification. Continuous operation at this limit requires thermal design ensuring R_thJA ≤ 60 °C/W with 6 cm² copper on FR4, or use of active cooling. Derating curves in Diagram 2 show ID drops to 54 A at T_C = 100 °C, confirming safe operation up to 150 °C case temperature with appropriate heatsinking.

Does this MOSFET require a negative gate turn-off voltage to prevent spurious conduction?

No. The gate threshold voltage range is 2.2–3.8 V, and the device is fully specified for 0 V turn-off. With V_GS(th) minimum of 2.2 V and typical gate leakage <100 nA, no negative bias is needed - standard 0–10 V gate drive suffices. The 20 V maximum V_GS rating allows margin for transient coupling without risk of oxide damage.

Can the PG-WHTFN-9 package be reflow soldered using standard lead-free profiles?

Yes. The package is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports peak reflow temperatures up to 260 °C. Its wettable flank geometry enables automated optical inspection of solder fillets, and the exposed drain paddle ensures reliable thermal transfer during reflow without voiding concerns common in thermal-pad QFNs.

How is the internal body diode utilized in synchronous rectifier configurations?

In synchronous rectifier mode, the body diode conducts only during dead-time intervals before the gate signal turns on the channel. Its low V_SD (0.83 V typ.) and fast t_rr (37 ns min.) minimize conduction loss and reverse recovery spikes. Unlike discrete diodes, it shares the same die thermal mass as the MOSFET channel, preventing thermal runaway during transient overload conditions.

IQE050N08NM5CGSCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 9-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta), 99A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 49µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHTFN-9-1

IQE050N08NM5CGSCATMA1 FAQ

1.How can I place an order for IQE050N08NM5CGSCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE050N08NM5CGSCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE050N08NM5CGSCATMA1 reliable?

The price and inventory of IQE050N08NM5CGSCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE050N08NM5CGSCATMA1 is usually 5 days.

3.What payment methods are accepted for IQE050N08NM5CGSCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE050N08NM5CGSCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE050N08NM5CGSCATMA1?

IQE050N08NM5CGSCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE050N08NM5CGSCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE050N08NM5CGSCATMA1?

For technical support, including IQE050N08NM5CGSCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE050N08NM5CGSCATMA1 requirements.

6.How does Aetrix verify that IQE050N08NM5CGSCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE050N08NM5CGSCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE050N08NM5CGSCATMA1 meets industry standards.

7.What is the process for return or replacement of IQE050N08NM5CGSCATMA1?

All IQE050N08NM5CGSCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE050N08NM5CGSCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE050N08NM5CGSCATMA1 part is unused and in its original packaging.

Return procedure for IQE050N08NM5CGSCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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