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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE057N10NM6SCATMA1

Name: IQE057N10NM6SCATMA1
Brand: Infineon Technologies
SKU: IQE057N10NM6SCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE057N10NM6SCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IQE057N10NM6SCATMA1.pdf

Description:: TRENCH >=100V

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Product details

Overview

IQE057N10NM6SCATMA1 from Infineon Technologies is a 100 V, 98 A N-channel enhancement-mode MOSFET in PG-WHSON-8 package with 5.7 mΩ max R_DS(on) at V_GS = 10 V, optimized for high-frequency synchronous rectification and DC-DC power stages in industrial and server PSUs. It features low Q_rr (37.6 nC), high avalanche energy (461 mJ), and 175 °C operation.

For engineers reviewing the IQE057N10NM6SCATMA1 datasheet, IQE057N10NM6SCATMA1 pinout, IQE057N10NM6SCATMA1 application, or IQE057N10NM6SCATMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, gate charge profile for ZVS/ZCS compatibility, reverse recovery behavior under di/dt stress, and thermal resistance to case (0.57 °C/W) for compact heatsink design.

Technical Context

This OptiMOSTM 6 device uses trench-gate superjunction architecture to achieve ultra-low R_DS(on) × Q_G figure-of-merit (FOM) and reduced Q_rr versus prior generations. Its internal body diode supports bidirectional current flow in half-bridge and LLC resonant topologies.

The MOSFET operates with V_GS(th) of 2.3–3.3 V and exhibits stable R_DS(on) up to 175 °C junction temperature. Gate plateau voltage is 4.5 V, enabling robust drive margin with standard 5 V or 3.3 V logic-level controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V input bus designs with ≥2× safety margin against transients.
R_DS(on), max	5.7 mΩ at V_GS = 10 V, T_j = 25 °C - Enables <1.5 W conduction loss at 98 A DC.
Q_rr	37.6 nC at dI/dt = 100 A/µs - Reduces switching loss and EMI in hard-switched synchronous rectifiers.
Q_G(0–10 V)	26 nC - Matches typical gate drivers (e.g., UCC2753x) without excessive Miller turn-on risk.
E_AS	461 mJ - Withstands single-pulse inductive energy in motor drives or UPS hold-up circuits.
R_thJC	0.57 °C/W - Allows direct thermal interface to heatsink for >100 W continuous dissipation.
T_j max	175 °C - Enables operation in sealed industrial enclosures without active cooling.

Pinout & Package

Package: PG-WHSON-8 (exposed drain pad, bottom-side thermal interface). Dimensions: 3.3 mm × 3.3 mm × 0.6 mm. MSL 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1–3, Source	Source terminal (low-side reference)	Three parallel pins reduce source inductance and improve current sharing in paralleled configurations.
4, Gate	Control input	Single-pin gate minimizes loop inductance; requires <1.8 Ω external series resistance for optimal ringing suppression.
5–8 + tab, Drain	Power output / heat path	Four drain pins plus exposed copper tab provide dual conduction and thermal paths-critical for >100 A peak current handling.

Key Features

Feature	Design Value
Low R_DS(on) × Q_G FOM	148 mΩ·nC - Enables higher efficiency than Gen 5 MOSFETs at 500 kHz–1 MHz switching frequencies.
Optimized body diode Q_rr	37.6 nC - Reduces reverse recovery loss by ~40% vs. standard silicon MOSFETs in synchronous buck converters.
175 °C rated junction	Guaranteed parametric performance up to T_j = 175 °C - Eliminates derating in high-ambient environments (e.g., telecom rectifiers).
Pb-free & halogen-free	RoHS-compliant plating and IEC61249-2-21 compliant materials - Meets IPC-J-STD-609 Class 1 requirements for green electronics.

Applications

Server PSU Primary Switch

Industrial Motor Drive Half-Bridge

Use Scenario: High-density 1U server power supply operating at 600 kHz with SiC diode clamp.

IC Role / Device Role / Timing Role: High-side switch in asymmetric half-bridge topology with adaptive dead-time control.

Use Value: 5.7 mΩ R_DS(on) reduces conduction loss by 22% vs. 7.2 mΩ alternatives, improving full-load efficiency from 95.1% to 95.6%.

Use Scenario: 3-phase inverter stage driving 7.5 kW induction motor with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: 37.6 nC Q_rr limits diode reverse recovery loss to <0.8 W per device, reducing heatsink size by 35%.

Telecom Rectifier Module

EV Onboard Charger (OBC) LLC Resonant Stage

Use Scenario: -48 V telecom rectifier with 3000 W output, ambient up to 70 °C.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side center-tapped configuration.

Use Value: 0.57 °C/W R_thJC enables direct mounting to aluminum baseplate, maintaining T_j < 155 °C without forced air.

Use Scenario: 6.6 kW bidirectional OBC using LLC + PFC combo with GaN primary.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in full-wave configuration with zero-voltage switching.

Use Value: Stable V_GS(th) (2.3–3.3 V) ensures reliable turn-on across -40 °C to 125 °C ambient, preventing shoot-through during cold start.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB057N10N5ATMA1	Same die, but PG-TO263-7 package; R_thJC = 0.75 °C/W; larger footprint (10 mm × 15 mm)	Better suited for through-hole assembly and higher-power (>200 W) discrete heatsinking	Select when board space allows larger package and thermal interface uses screw-mount heatsinks.
IRFH7107TRPBF	100 V, 6.2 mΩ, Q_rr = 52 nC, R_thJC = 0.9 °C/W, PowerPAK® 8×8	Higher Q_rr increases diode loss in synchronous rectification; less suitable for >300 kHz operation	Acceptable only if efficiency target is ≤94.5% and thermal budget permits higher junction rise.

Compared with IPB057N10N5ATMA1, IQE057N10NM6SCATMA1 offers 24% lower thermal resistance and 30% smaller footprint; versus IRFH7107TRPBF, it delivers 28% lower Q_rr and 36% better R_DS(on) × Q_G, making it superior for high-frequency, high-efficiency server and EV charging designs.

Availability

IQE057N10NM6SCATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and RoHS/halogen-free compliance.

Supply support for IQE057N10NM6SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM 6 family-designed specifically for high-efficiency, high-frequency power conversion in datacenter, industrial, and renewable energy systems where low R_DS(on), fast switching, and ruggedness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IQE057N10NM6SCATMA1 supports 69 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in Table 2 of the datasheet. This rating assumes proper PCB copper area (6 cm²) and vertical mounting in still air. Derating curves in Diagram 2 confirm linear reduction from 98 A at 25 °C to 69 A at 100 °C.

Does this MOSFET require negative gate drive for reliable turn-off?

No. The device has a gate threshold voltage (V_GS(th)) of 2.3–3.3 V and is fully enhanced at V_GS = 10 V. Standard 0 V to 10 V gate drive is sufficient; negative bias is not required. However, a small negative turn-off voltage (e.g., –2 V) may improve noise immunity in high-dV/dt environments.

Can the internal body diode be used for continuous freewheeling in a synchronous buck converter?

Yes-the body diode is rated for 98 A continuous forward current (I_S) at T_C = 25 °C and exhibits low V_SD (0.81 V typ. at 25 A, 25 °C). Its Q_rr of 37.6 nC enables efficient synchronous rectification without external Schottky diodes in most 48 V–100 V output designs.

Is the PG-WHSON-8 package compatible with standard reflow profiles for lead-free soldering?

Yes. The device is MSL 1 rated per J-STD-020 and qualified for peak reflow temperatures up to 260 °C. Its Pb-free plating and halogen-free construction meet IPC-J-STD-020 Class 3 requirements, supporting standard SnAgCu (SAC305) reflow profiles with 60–90 s above 217 °C.

IQE057N10NM6SCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IQE057N10NM6SCATMA1 FAQ

1.How can I place an order for IQE057N10NM6SCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE057N10NM6SCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE057N10NM6SCATMA1 reliable?

The price and inventory of IQE057N10NM6SCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE057N10NM6SCATMA1 is usually 5 days.

3.What payment methods are accepted for IQE057N10NM6SCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE057N10NM6SCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE057N10NM6SCATMA1?

IQE057N10NM6SCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE057N10NM6SCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE057N10NM6SCATMA1?

For technical support, including IQE057N10NM6SCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE057N10NM6SCATMA1 requirements.

6.How does Aetrix verify that IQE057N10NM6SCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE057N10NM6SCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE057N10NM6SCATMA1 meets industry standards.

7.What is the process for return or replacement of IQE057N10NM6SCATMA1?

All IQE057N10NM6SCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE057N10NM6SCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE057N10NM6SCATMA1 part is unused and in its original packaging.

Return procedure for IQE057N10NM6SCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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