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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE065N10NM5CGSCATMA1

Name: IQE065N10NM5CGSCATMA1
Brand: Infineon Technologies
SKU: IQE065N10NM5CGSCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE065N10NM5CGSCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 9-PowerWDFN

Datasheet:: IQE065N10NM5CGSCATMA1.pdf

Description:: OPTIMOS LOWVOLTAGE POWER MOSFET

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Product details

Overview

IQE065N10NM5CGSCATMA1 from Infineon Technologies is a 100 V, 6.5 mΩ N-channel OptiMOS™ 5 power MOSFET in PG-WHTFN-9 package, optimized for synchronous rectification in high-efficiency SMPS. It delivers 85 A continuous drain current at TC=25 °C, features 100% avalanche testing, and integrates an internal body diode with 36 ns reverse recovery time. Used in server VRMs and telecom DC-DC converters.

For engineers reviewing the IQE065N10NM5CGSCATMA1 datasheet, IQE065N10NM5CGSCATMA1 pinout, IQE065N10NM5CGSCATMA1 application, or IQE065N10NM5CGSCATMA1 equivalent, key selection criteria include RDS(on) at 6 V gate drive, Qg(0–10 V) = 34 nC, thermal resistance RthJC (bottom) = 0.8 °C/W, and PG-WHTFN-9 footprint compatibility with high-current PCB layouts.

Technical Context

This device is a trench-based silicon MOSFET designed for high-frequency switching in hard-switched and synchronous rectifier topologies. Its low Qgd (7.4 nC typ.) and fast turn-off delay (21.1 ns) support efficient operation above 300 kHz in LLC and phase-shifted full-bridge converters.

The integrated body diode exhibits controlled reverse recovery (Qrr = 40–80 nC, trr = 36–72 ns), enabling reliable zero-voltage switching (ZVS) in resonant designs. Thermal design leverages dual-side cooling via bottom-source thermal pad and top-side case interface (RthJC top = 0.7 °C/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V input bus applications with 20% derating margin.
R_DS(on), max	6.5 mΩ @ V_GS=10 V, I_D=20 A - Enables <1.3 W conduction loss at 50 A in continuous mode.
Q_G(0–10 V)	34 nC - Determines gate driver peak current requirement (~1.7 A for 20 ns rise time).
Q_oss	40 nC - Sets output energy loss per switching cycle; critical for light-load efficiency in CCM/DCM transitions.
T_j max	175 °C - Supports operation in sealed industrial enclosures with ambient up to 85 °C and 6 cm² copper cooling.
I_D, cont.	85 A @ T_C=25 °C - Validated continuous rating under JEDEC industrial qualification (JESD47).
R_thJC (bottom)	0.8 °C/W - Enables 100 W power dissipation with ≤80 K temperature rise from junction to heatsink baseplate.

Pinout & Package

Package: PG-WHTFN-9 - 9-pin wettable flank thermally enhanced QFN with exposed drain paddle (pins 5–8), gate pad (pin 9), and source terminals (pins 1–4). Designed for automated optical solder inspection and high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–4	Source	Parallel low-inductance source return path; connects to PCB ground plane for EMI control and thermal spreading.
Pins 5–8	Drain	High-current drain connection to internal MOSFET cells; electrically and thermally tied to exposed bottom paddle.
Pin 9	Gate	Single-point gate input with low RG (0.7 Ω typ.); requires local 10 nF gate resistor to damp ringing in >500 kHz operation.

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_g/Q_gd ratio (34/7.4 nC) enables precise timing control and reduced shoot-through risk in SR controllers.
100% avalanche tested	Guarantees single-pulse EAS = 147 mJ - supports robustness against inductive load transients without external snubbers.
Superior thermal resistance	R_thJC (bottom) = 0.8 °C/W allows 2× higher power density vs. standard SO-8 MOSFETs in same board area.
Internal body diode with fast recovery	t_rr = 36 ns (typ.) and Q_rr = 40 nC enable ZVS in resonant topologies without external Schottky assist diodes.

Applications

Server Voltage Regulator Modules

Telecom 48 V DC-DC Converters

Use Scenario: High-density 3.3 V/50 A VRM supplying CPU core power in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter, switching at 600 kHz with adaptive dead-time control.

Use Value: 6.5 mΩ R_DS(on) reduces conduction loss by 32% vs. legacy 10 mΩ devices, improving full-load efficiency from 92.1% to 93.4%.

Use Scenario: Isolated forward converter delivering 12 V/40 A from 48 V telecom rectified input.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating in discontinuous conduction mode (DCM) with 350 kHz switching frequency.

Use Value: Low Q_oss (40 nC) minimizes capacitive switching loss during light-load burst-mode operation, extending standby efficiency compliance.

Industrial Motor Drive Inverters

EV On-Board Charger (OBC) PFC Stages

Use Scenario: 3-phase inverter stage for 1.5 kW servo drives with 20 kHz PWM carrier.

IC Role / Device Role / Timing Role: High-side switch in half-bridge leg, driven by isolated gate driver with 100 ns propagation delay.

Use Value: 175 °C T_j rating ensures reliability under 105 °C ambient and 40 K heatsink temperature rise in enclosed cabinets.

Use Scenario: Boost PFC switch in 3.3 kW bidirectional OBC handling AC grid and battery charging paths.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in critical conduction mode (CrM) with variable frequency up to 250 kHz.

Use Value: 34 nC total gate charge enables gate driver IC (e.g., 1EDN7512B) to achieve <15 ns rise/fall times while maintaining <1.2 W driver loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB110N10N5L	R_DS(on) = 11.0 mΩ (higher), Q_g = 28 nC (lower), PG-HSOF-8 package	Limited to ≤30 A continuous due to higher R_DS(on) and single-sided cooling	Preferable where gate drive strength is constrained but thermal budget allows larger heatsink.
IRFH5020TRPBF	R_DS(on) = 6.0 mΩ (slightly lower), Q_g = 45 nC (higher), PQFN 5×6 mm package	No wettable flanks; optical inspection not supported; R_thJC = 1.2 °C/W (worse thermal performance)	Choose only when existing layout uses standard 5×6 mm footprint and optical AOI is not required.

Compared with IPB110N10N5L and IRFH5020TRPBF, IQE065N10NM5CGSCATMA1 offers best-in-class thermal resistance (0.8 °C/W) and balanced gate charge (34 nC), making it optimal for space-constrained, high-power-density SMPS where both efficiency and manufacturability matter.

Availability

IQE065N10NM5CGSCATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IQE065N10NM5CGSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOS™ 5 product line-engineered specifically for high-frequency, high-efficiency power conversion in datacenter, telecom, and industrial SMPS applications where low R_DS(on), fast switching, and thermal robustness are mandatory.

FAQ

What is the maximum recommended gate voltage for reliable operation?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies 10 V as the nominal drive level for rated R_DS(on) and safe operating area. Driving above 12 V provides negligible R_DS(on) improvement (<0.3%) while increasing gate oxide stress and ESD vulnerability. For robust long-term reliability, maintain V_GS between 8 V and 10 V in production designs.

Can this MOSFET be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (1.8× increase from 25 °C to 175 °C, per Diagram 9) ensures inherent current sharing. Parallel operation requires matched gate loop inductance (<1.5 nH difference) and symmetrical PCB copper pours. Derate total current by 15% versus sum of individual ratings to account for thermal coupling effects.

Does the internal body diode support continuous conduction mode (CCM) operation?

Yes-the diode is rated for 74 A continuous forward current at T_C=25 °C and has characterized reverse recovery parameters (Q_rr = 40–80 nC, t_rr = 36–72 ns). In CCM, ensure gate drive timing avoids simultaneous conduction; use controller with adaptive dead-time adjustment to prevent cross-conduction losses.

Is the PG-WHTFN-9 package compatible with standard reflow profiles?

Yes-it is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 3 (MSL3) and supports peak reflow temperatures up to 260 °C for 30 seconds. The wettable flank design requires stencil aperture reduction of 10% on side pins to prevent bridging; recommended solder paste is Type 4 (20–38 µm particle size) with no-clean flux chemistry.

IQE065N10NM5CGSCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 9-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta), 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 48µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHTFN-9-1

IQE065N10NM5CGSCATMA1 FAQ

1.How can I place an order for IQE065N10NM5CGSCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE065N10NM5CGSCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE065N10NM5CGSCATMA1 reliable?

The price and inventory of IQE065N10NM5CGSCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE065N10NM5CGSCATMA1 is usually 5 days.

3.What payment methods are accepted for IQE065N10NM5CGSCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE065N10NM5CGSCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE065N10NM5CGSCATMA1?

IQE065N10NM5CGSCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE065N10NM5CGSCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE065N10NM5CGSCATMA1?

For technical support, including IQE065N10NM5CGSCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE065N10NM5CGSCATMA1 requirements.

6.How does Aetrix verify that IQE065N10NM5CGSCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE065N10NM5CGSCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE065N10NM5CGSCATMA1 meets industry standards.

7.What is the process for return or replacement of IQE065N10NM5CGSCATMA1?

All IQE065N10NM5CGSCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE065N10NM5CGSCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE065N10NM5CGSCATMA1 part is unused and in its original packaging.

Return procedure for IQE065N10NM5CGSCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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