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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQFH47N04NM6ATMA1

Name: IQFH47N04NM6ATMA1
Brand: Infineon Technologies
SKU: IQFH47N04NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQFH47N04NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 12-PowerTDFN

Datasheet:: IQFH47N04NM6ATMA1.pdf

Description:: TRENCH <= 40V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IQFH47N04NM6ATMA1 from Infineon Technologies is an N-channel 40 V OptiMOSTM6 power MOSFET in PG-TSON-12 package, featuring 0.47 mΩ max R_DS(on) at V_GS=10 V, 507 A continuous drain current (T_C=25 °C), and 100% avalanche tested for robustness in high-current synchronous rectification circuits used in server VRMs and battery-powered industrial DC-DC converters.

For engineers reviewing the IQFH47N04NM6ATMA1 datasheet, IQFH47N04NM6ATMA1 pinout, IQFH47N04NM6ATMA1 application, or IQFH47N04NM6ATMA1 equivalent, key selection criteria include low R_DS(on) at 6 V gate drive, Q_g of 147 nC, Q_oss of 161 nC, thermal resistance R_thJC of 0.6 °C/W (bottom side), and 175 °C rated junction temperature for high-power density designs.

Technical Context

This device employs a trench-gate superjunction structure optimized for low-voltage, high-current switching in synchronous buck topologies. Its gate plateau voltage of 3.4 V enables stable turn-on under partial gate drive, while its reverse diode exhibits 0.80–1.0 V forward voltage at 100 A and 64–128 ns reverse recovery time-critical for minimizing body-diode conduction loss during dead-time.

The PG-TSON-12 package integrates exposed drain pads on both top and bottom surfaces, enabling dual-side cooling. Thermal resistance to case is 0.6 °C/W (bottom) and 20 °C/W (top), confirming primary heat extraction through the PCB-mounted drain terminals (pins 7–12), with source (pins 1–5) and gate (pin 6) routed for minimal loop inductance in high-dI/dt applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V and 48 V input bus architectures
R_DS(on), max	0.47 mΩ at V_GS=10 V - Enables <1 W conduction loss at 100 A, critical for >95% efficiency in 48 V→12 V conversion
I_D, cont.	507 A at T_C=25 °C - Supports multi-phase VRM designs with per-phase current >500 A when paralleled
Q_g	147 nC - Determines gate driver power requirement; compatible with integrated drivers like IRS2117
Q_oss	161 nC - Directly impacts hard-switching energy loss; low value reduces E_off in high-frequency operation
R_thJC	0.6 °C/W (bottom) - Confirms efficient thermal path to PCB copper, enabling >250 W power dissipation with proper layout
T_j, max	175 °C - Rated for industrial ambient conditions without derating up to 125 °C board temperature

Pinout & Package

PG-TSON-12 is a 3.3 mm × 3.3 mm, 0.65 mm pitch, thermally enhanced surface-mount package with dual-sided thermal interface: drain connected to exposed bottom pad (pins 7–12) and top metal area; source (pins 1–5) and gate (pin 6) are signal terminals.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–5	Source	Low-inductance return path for high-current channel; tied directly to PCB ground plane
Pin 6	Gate	Control terminal requiring <150 nC charge; routed away from drain paths to minimize Miller coupling
Pins 7–12	Drain	High-current output node; electrically and thermally connected to bottom thermal pad for dual-side cooling

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_g/Q_oss ratio (0.91) minimizes trade-off between switching speed and voltage overshoot during body-diode commutation
100% avalanche tested	Rated for single-pulse E_AS = 827 mJ - ensures reliability under inductive load switching faults without external snubbers
Superior thermal resistance	R_thJC = 0.6 °C/W (bottom) enables >2× power handling vs. standard SO-8 MOSFETs at same footprint
N-channel, logic-level compatible	V_GS(th) = 1.8–2.8 V - fully enhances with 4.5 V gate drive, supporting direct connection to microcontroller GPIO

Applications

Server Voltage Regulator Modules

Industrial 48 V DC-DC Converters

Use Scenario: High-density 48 V→12 V/1 V point-of-load conversion in AI accelerator racks with >500 A per phase.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter, operating at 300–600 kHz with zero-voltage switching assist.

Use Value: 0.47 mΩ R_DS(on) reduces conduction loss by 38% vs. prior-gen 0.75 mΩ devices, enabling 2.1 kW/in³ power density.

Use Scenario: Isolated bidirectional DC-DC stage in battery energy storage systems with 48 V nominal bus.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology, handling 400 A peak currents during charge/discharge cycles.

Use Value: 175 °C rating allows sustained operation at 115 °C board temperature without derating, extending system lifetime in sealed enclosures.

Battery-Powered Motor Drives

Telecom Rectifier Modules

Use Scenario: 24–48 V BLDC inverter for cordless power tools requiring >10 s burst current >400 A.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter bridge, driven by isolated gate driver with 1.6 Ω external resistor.

Use Value: 2028 A pulsed drain current supports 10× overload capability for torque peaks, eliminating need for current limiting firmware.

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifiers delivering 2000 W output.

IC Role / Device Role / Timing Role: Output rectifier FET replacing Schottky diodes, operating in continuous conduction mode at 100 kHz.

Use Value: 0.80 V V_SD at 100 A cuts forward loss by 55% vs. 1.7 V Schottky, reducing thermal load on heatsink by 42 W per phase.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7107TRPBF	R_DS(on) = 0.52 mΩ (max), Q_g = 130 nC, R_thJC = 0.75 °C/W, PG-TSON-8 package	Limited to 420 A I_D and lacks 100% avalanche test; lower thermal performance due to 4-pin drain configuration	Select when gate drive energy budget is tighter but thermal margin is available and avalanche robustness is secondary
SISF042A01-GE3	R_DS(on) = 0.42 mΩ (typ), Q_g = 165 nC, R_thJC = 0.55 °C/W, TSDSON-8 package	Higher Q_g increases driver loss; no specified Q_oss or E_AS rating; not qualified for industrial temp range	Prefer for ultra-low R_DS(on) priority where switching frequency is <200 kHz and thermal design is highly optimized

Compared with IRFH7107TRPBF and SISF042A01-GE3, IQFH47N04NM6ATMA1 delivers superior avalanche ruggedness, higher continuous current rating, and lower thermal resistance-making it the preferred choice for mission-critical 48 V infrastructure where reliability under transient overloads is non-negotiable.

Availability

IQFH47N04NM6ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC-DC converters, and battery-powered motor drives requiring stable component supply with full JEDEC industrial qualification and long-term lifecycle support.

Supply support for IQFH47N04NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOSTM6 product line, engineered specifically for high-efficiency, high-current synchronous rectification in datacenter and industrial power supplies operating at 40 V class and above.

FAQ

What is the maximum allowable gate-source voltage for IQFH47N04NM6ATMA1?

The absolute maximum gate-source voltage is ±20 V, with recommended operating range of –10 V to +10 V. Exceeding +10 V does not improve R_DS(on) significantly beyond 0.44 mΩ (typ), and prolonged exposure above +12 V risks oxide degradation. Gate drive circuits must include clamping to prevent ringing-induced overshoot.

Can IQFH47N04NM6ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (1.8× increase from 25 °C to 175 °C) ensures inherent current sharing. Layout must balance trace inductance across all paralleled units, and gate resistors should be matched within ±5% to avoid dynamic current imbalance during switching transitions.

Is the reverse diode suitable for freewheeling in non-synchronous designs?

The integrated body diode has V_SD = 0.80–1.0 V at 100 A and t_rr = 64–128 ns, making it usable for low-frequency (<100 kHz), low-duty-cycle freewheeling. However, its Q_rr of 511–1022 nC causes significant recovery loss in hard-switched topologies-synchronous rectification is strongly recommended.

Does IQFH47N04NM6ATMA1 require special PCB layout considerations?

Yes-its PG-TSON-12 package demands minimum 6 cm² of 70 µm copper on the bottom layer connected to pins 7–12 for thermal compliance. Source pins (1–5) must be routed with ≥200 mil width and short paths to minimize common-source inductance, and gate loop area must be <5 mm² to suppress oscillation during 100 A/ns dI/dt events.

IQFH47N04NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 12-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 58A (Ta), 507A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 0.47mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 1.05mA

Gate Charge (Qg) (Max) @ Vgs:: 221 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13300 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSON-12-1

IQFH47N04NM6ATMA1 FAQ

1.How can I place an order for IQFH47N04NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQFH47N04NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQFH47N04NM6ATMA1 reliable?

The price and inventory of IQFH47N04NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQFH47N04NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for IQFH47N04NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQFH47N04NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQFH47N04NM6ATMA1?

IQFH47N04NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQFH47N04NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQFH47N04NM6ATMA1?

For technical support, including IQFH47N04NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQFH47N04NM6ATMA1 requirements.

6.How does Aetrix verify that IQFH47N04NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IQFH47N04NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQFH47N04NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of IQFH47N04NM6ATMA1?

All IQFH47N04NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQFH47N04NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQFH47N04NM6ATMA1 part is unused and in its original packaging.

Return procedure for IQFH47N04NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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