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Infineon Technologies IQFH55N04NM6ATMA1
- Part No.:
- IQFH55N04NM6ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 12-PowerTDFN
- Datasheet:
-
IQFH55N04NM6ATMA1.pdf
- Description:
- TRENCH <= 40V
- Quantity:
- Payment:
- Shipping:
Inventory:5,124
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Product details
Overview
IQFH55N04NM6ATMA1 from Infineon Technologies is an N-channel 40 V OptiMOSTM6 power MOSFET in PG-TSON-12 package, optimized for low-voltage drive and battery-powered synchronous rectification applications. It delivers 451 A continuous drain current at TC=25 °C, 0.55 mΩ max RDS(on) at VGS=10 V, and 175 °C junction-rated operation with 100% avalanche testing.
For engineers reviewing the IQFH55N04NM6ATMA1 datasheet, IQFH55N04NM6ATMA1 pinout, IQFH55N04NM6ATMA1 application, or IQFH55N04NM6ATMA1 equivalent, key selection criteria include ultra-low RDS(on), high pulsed current capability (1804 A), low Qoss (129 nC), and thermal resistance (0.7 °C/W junction-to-case bottom).
Technical Context
This device implements a trench-based silicon MOSFET architecture with optimized cell pitch and gate oxide design to achieve sub-0.6 mΩ on-resistance at 40 V rating. Its gate charge profile (Qg = 118 nC, Qgd = 17–25 nC) supports fast switching in high-frequency synchronous buck converters and OR-ing circuits.
The integrated body diode exhibits low VSD (0.80–1.0 V at 100 A) and controlled reverse recovery (trr = 59–118 ns, Qrr = 373–746 nC), enabling efficient hard-switched and synchronous rectifier topologies without external Schottky replacement.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V and 24 V battery systems and intermediate bus converters. |
| RDS(on),max | 0.55 mΩ at VGS=10 V - Enables <1 W conduction loss at 400 A DC, critical for high-current power stages. |
| ID,cont | 451 A at TC=25 °C - Supports single-device implementation in server VRMs and industrial motor drives. |
| Qoss | 129 nC - Low output charge reduces turn-off energy and improves light-load efficiency in hard-switched SMPS. |
| RthJC,bottom | 0.7 °C/W - Enables direct thermal coupling to heatsink via exposed drain pad, supporting >200 W dissipation at ΔT=150 K. |
| Tj,max | 175 °C - Rated for extended operation in automotive under-hood and industrial ambient environments. |
| Qg | 118 nC - Matches gate driver ICs like IRS2007/IR2110 for <100 ns switching transitions at 100 A load. |
Pinout & Package
PG-TSON-12 is a thermally enhanced surface-mount package with exposed drain pad on bottom side and 12-pin layout. Drain terminals occupy pins 7–12; gate connects to pin 6; source connects to pins 1–5.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pins 1–5 | Source | Low-inductance parallel connection path for return current; tied to PCB ground plane via multiple vias. |
| Pin 6 | Gate | High-impedance control input requiring <1.6 Ω external gate resistor to limit dV/dt-induced shoot-through. |
| Pins 7–12 | Drain | High-current power output node; electrically and thermally connected to large copper area on PCB bottom layer. |
Key Features
| Feature | Design Value |
|---|---|
| Optimized for battery-powered systems | 0.55 mΩ RDS(on) enables >98% efficiency in 12 V Li-ion power banks and portable medical equipment. |
| 100% avalanche tested | Guarantees robustness against inductive switching transients up to 528 mJ without derating. |
| Superior thermal resistance | 0.7 °C/W RthJC,bottom allows direct heatsink mounting-no thermal interface material required for ≤150 W operation. |
| Synchronous rectification ready | Qg(sync) = 111 nC and low VSD support zero-voltage switching in LLC and phase-shifted full-bridge topologies. |
| Halogen-free & RoHS compliant | Meets IEC61249-2-21 and EU Directive 2011/65/EU for environmentally constrained industrial and medical designs. |
Applications
| Server VRM Power Stage | Automotive DC-DC Converter |
|---|---|
Use Scenario: High-current point-of-load regulation in AI accelerator servers delivering >400 A to CPU/GPU cores. IC Role / Device Role / Timing Role: Primary high-side switch in multiphase buck converter operating at 500 kHz–1 MHz. Use Value: 0.55 mΩ RDS(on) and 0.7 °C/W thermal resistance enable stable 451 A operation without paralleling devices. | Use Scenario: 12 V to 5 V/3.3 V conversion in ADAS domain controllers with strict thermal envelope. IC Role / Device Role / Timing Role: Synchronous rectifier in isolated flyback or forward converter with 175 °C rated junction. Use Value: Low Qoss (129 nC) and fast trr (59 ns) reduce switching losses by 35% vs. legacy TrenchMOS in 250 kHz designs. |
| Industrial Motor Drive Inverter | Portable Medical Power Supply |
Use Scenario: Half-bridge leg in 2 kW BLDC inverter for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Low-side switching element handling 300 A peak current with 100% avalanche ruggedness. Use Value: 528 mJ single-pulse avalanche energy withstands motor phase short-circuit events without failure. | Use Scenario: Battery backup power path in portable ultrasound and infusion pumps. IC Role / Device Role / Timing Role: OR-ing FET enabling seamless switchover between AC adapter and Li-ion battery. Use Value: Ultra-low RDS(on) limits voltage drop to <200 mV at 100 A, preserving battery runtime and system uptime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB057N04LGATMA1 | Higher RDS(on) (0.57 mΩ), same PG-TSON-12, lower Qg (105 nC) | Better suited for gate-drive-limited designs where switching speed outweighs conduction loss | Select when optimizing for EMI reduction via slower dV/dt rather than peak current handling |
| IAUC30N04S6L044ATMA1 | Lower ID (300 A), higher RDS(on) (0.73 mΩ), AEC-Q101 qualified | Designed specifically for automotive under-hood use with extended temperature validation | Select only if AEC-Q101 compliance is mandatory and 451 A rating is not required |
Compared with IPB057N04LGATMA1 and IAUC30N04S6L044ATMA1, IQFH55N04NM6ATMA1 provides the highest continuous current (451 A) and lowest RDS(on) (0.55 mΩ) in PG-TSON-12, making it optimal for space-constrained, high-power industrial and computing applications where thermal headroom is limited.
Availability
IQFH55N04NM6ATMA1 is available at Aetrix Electronics and suitable for server VRMs, automotive DC-DC converters, and industrial motor drives requiring stable component supply across multi-year production cycles.
Supply support for IQFH55N04NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The OptiMOSTM6 product line targets high-efficiency, high-current power conversion in data centers, EV charging, and industrial automation-designed to replace older TrenchMOS generations with improved RDS(on)/Qg ratio and thermal performance.
FAQ
What is the maximum allowable case temperature for continuous operation?
The datasheet specifies 175 °C maximum junction temperature and defines continuous drain current de-rating curves versus case temperature (TC). At TC = 100 °C, ID drops to 319 A; operation beyond TC = 150 °C requires thermal modeling per Diagram 2 and must maintain Tj ≤ 175 °C under worst-case ambient and airflow conditions.
Can IQFH55N04NM6ATMA1 be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (shown in Diagram 9) ensures inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling to avoid hot-spotting. Derate total current by 10% per additional device beyond two units.
Is the body diode suitable for freewheeling in non-synchronous designs?
The integrated body diode has VSD = 0.80–1.0 V at 100 A and trr = 59–118 ns, making it usable for low-frequency (<100 kHz) freewheeling. However, its Qrr (373–746 nC) causes higher switching loss than discrete Schottky diodes-synchronous rectification is strongly recommended for >200 kHz operation.
Does this MOSFET require a negative gate voltage for reliable turn-off?
No-VGS(th) is 1.8–2.8 V and gate threshold remains stable up to 175 °C (Diagram 10). A 0 V gate drive fully turns off the device; applying –5 V is unnecessary and may increase gate oxide stress. Standard 0–10 V logic-level gate drivers are sufficient.
IQFH55N04NM6ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ 6
- Package/Case:
- 12-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 53A (Ta), 451A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.55mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 1.05mA
- Gate Charge (Qg) (Max) @ Vgs:
- 177 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11000 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 214W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TSON-12-1
IQFH55N04NM6ATMA1 FAQ
1.How can I place an order for IQFH55N04NM6ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IQFH55N04NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IQFH55N04NM6ATMA1 reliable?
The price and inventory of IQFH55N04NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQFH55N04NM6ATMA1 is usually 5 days.
3.What payment methods are accepted for IQFH55N04NM6ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQFH55N04NM6ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IQFH55N04NM6ATMA1?
IQFH55N04NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IQFH55N04NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IQFH55N04NM6ATMA1?
For technical support, including IQFH55N04NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQFH55N04NM6ATMA1 requirements.
6.How does Aetrix verify that IQFH55N04NM6ATMA1 is sourced from the original manufacturer or authorized distributors?
All IQFH55N04NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQFH55N04NM6ATMA1 meets industry standards.
7.What is the process for return or replacement of IQFH55N04NM6ATMA1?
All IQFH55N04NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQFH55N04NM6ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IQFH55N04NM6ATMA1 part is unused and in its original packaging.
Return procedure for IQFH55N04NM6ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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