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International Test Instruments Corporation IR2101PBF

Part No.:
IR2101PBF
Manufacturer:
International Test Instruments Corporation
Category:
Gate Drivers
Package:
8-DIP (0.300", 7.62mm)
Datasheet:
AetrixIR2101PBF.pdf
Description:
IR2101 - GATE DRIVER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:192

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Product details

Overview

IR2101PBF from Infineon Technologies is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs, featuring independent high-side (HO) and low-side (LO) outputs with in-phase logic inputs, 600 V offset capability, 160 ns turn-on / 150 ns turn-off propagation delay, and 10–20 V gate drive supply range - used in half-bridge motor control and SMPS power stages.

For engineers reviewing the IR2101PBF datasheet, IR2101PBF pinout, IR2101PBF application, or IR2101PBF equivalent, key selection criteria include bootstrap-compatible high-side operation up to +600 V, matched channel delays (<50 ns), 3.3V/5V/15V logic compatibility, undervoltage lockout thresholds (8.2–9.8 V on VCC), and SOIC-8/PDIP-8 package options.

Technical Context

The IR2101PBF integrates a high-voltage level-shifting circuit for the floating high-side channel and a robust CMOS logic interface with latch-immune HVIC technology. It supports bootstrap-based high-side drive with VS referenced to COM and VB supplying the high-side gate driver stage.

Its dual-output architecture delivers simultaneous in-phase HIN→HO and LIN→LO switching with precise timing control: propagation delays are characterized at VS = 0 V (ton) and VS = 600 V (toff), and delay matching between channels is guaranteed ≤50 ns under 15 V bias and 25 °C.

Key Specifications

Parameter Value and Actual Design Meaning
VOFFSET max 600 V - enables high-side switch operation in half-bridge topologies up to 600 V bus voltage
IO+ / IO− 130 mA / 270 mA - peak source/sink current sufficient to drive 1 nF gate capacitance with <100 ns rise/fall
ton / toff (typ.) 160 ns / 150 ns - ensures tight PWM timing control in >100 kHz switching applications
Delay matching ≤50 ns - minimizes shoot-through risk in synchronous bridge configurations
VCC supply range 10–20 V - compatible with standard 12 V or 15 V gate driver rails
Logic input compatibility 3.3 V, 5 V, 15 V - interoperable with microcontrollers, FPGAs, and analog comparators without level shifting
VCC UVLO threshold 8.2–9.8 V (rising), 7.4–9.0 V (falling) - prevents erratic output behavior during brown-out conditions

Pinout & Package

IR2101PBF is available in 8-lead PDIP (IR2101) and 8-lead SOIC (IR2101S) packages, both RoHS-compliant and lead-free (PbF). The device uses a standard dual-in-line or small-outline footprint with exposed pad not present.

Pin/Terminal Circuit Role Design Meaning
HIN High-side logic input In-phase control signal for HO output; accepts 3.3V/5V/15V CMOS/LSTTL levels
LIN Low-side logic input In-phase control signal for LO output; independent of HIN for asymmetric PWM
HO High-side gate drive output Floating N-channel driver output referenced to VS; drives gate of high-side MOSFET/IGBT
LO Low-side gate drive output Ground-referenced N-channel driver output; sinks/source up to 270 mA
VB High-side floating supply Bootstrap capacitor connection point; supplies high-side driver stage referenced to VS
VS High-side floating return Reference node for high-side channel; swings from −5 V to +600 V relative to COM
VCC Low-side and logic supply Fixed 10–20 V rail powering low-side driver, logic, and level-shift circuitry
COM Power ground reference Common return for LO, logic inputs, and VCC; isolated from VS by internal level shift

Key Features

Feature Design Value
Floating channel with dV/dt immunity Rated for 50 V/ns transient tolerance on VS node - suppresses false triggering in noisy high-dV/dt environments
Matched propagation delays ≤50 ns difference between HO and LO turn-on/turn-off - critical for minimizing dead-time uncertainty
Independent high/low side outputs No internal cross-conduction path - allows asymmetric PWM, three-state control, and external dead-time insertion
Undervoltage lockout (UVLO) Separate UVLO on VCC (7.4–9.8 V window) and VB (threshold not specified but functional down to 10 V) - ensures safe power-up/power-down sequencing
Logic-level compatibility Valid operation with 3.3 V logic inputs even at full temperature range (−40 °C to +125 °C) - eliminates need for external translators

Applications

Motor Drive Half-Bridge Induction Heating Inverter

Use Scenario: Driving complementary N-channel MOSFETs in a 3-phase BLDC motor gate driver stage with discrete bootstrap networks.

IC Role / Device Role / Timing Role: High-side/low-side gate driver providing in-phase logic-to-gate translation with matched delays and 600 V offset tolerance.

Use Value: Enables compact, cost-effective half-bridge design without P-channel high-side devices or isolated supplies.

Use Scenario: Controlling resonant LLC or Class-D inverter switches in induction cooktops operating at 20–100 kHz.

IC Role / Device Role / Timing Role: Synchronized gate driving of high-frequency IGBTs with fast rise/fall times and dV/dt noise immunity.

Use Value: Reduces switching losses via 100 ns rise/50 ns fall times while maintaining reliability under high EMI conditions.

Industrial SMPS UPS Power Stage

Use Scenario: Gate driving in active-clamp forward or phase-shifted full-bridge DC/DC converters with 400 V input rails.

IC Role / Device Role / Timing Role: High-side driver supporting bootstrap operation up to 600 V offset, with UVLO ensuring clean startup.

Use Value: Eliminates need for transformer-isolated gate drivers, reducing BOM count and layout complexity.

Use Scenario: Bidirectional half-bridge control in online UPS inverters requiring reverse conduction and fast fault response.

IC Role / Device Role / Timing Role: Dual-channel driver enabling independent control of inverter and rectifier legs with precise timing alignment.

Use Value: Supports zero-voltage switching (ZVS) transitions via sub-200 ns propagation delays and tight delay matching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
IR2104PBF Integrated bootstrap diode and dead-time generator; single-input (IN) with internal logic; no separate HIN/LIN pins Designed for simpler synchronous buck or half-bridge where automatic dead-time insertion is preferred Select when reduced external component count and built-in timing control outweigh need for independent HIN/LIN control
IRS21844PbF Higher drive current (260 mA/650 mA), faster propagation (60 ns/30 ns), and enhanced noise immunity; requires external bootstrap diode Targeted at high-frequency (>500 kHz), high-power industrial inverters demanding tighter timing margins Select when system requires >200 kHz switching, lower gate charge drive latency, or higher peak current capability

Compared with IR2101PBF, IR2104PBF simplifies layout with integrated dead time but sacrifices independent channel control, while IRS21844PbF delivers superior speed and drive strength at the cost of increased external component dependency and higher quiescent current.

Availability

IR2101PBF is available at Aetrix Electronics and suitable for motor drive half-bridges, industrial SMPS, and UPS power stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for IR2101PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.

The IR21xx family was designed specifically for cost-sensitive, high-reliability half-bridge and full-bridge power conversion systems requiring robust bootstrap-based high-side drive without isolation components.

FAQ

What is the maximum allowable dV/dt on the VS pin?

The IR2101PBF is rated for 50 V/ns dV/dt on the VS node under all operating conditions. This specification ensures reliable operation in high-noise environments such as motor drives and resonant converters where rapid bus voltage transients occur. Exceeding this rate may cause false high-side turn-on due to capacitive coupling into the level-shifter circuit.

Can IR2101PBF drive SiC MOSFETs?

Yes - the IR2101PBF can drive SiC MOSFETs provided gate resistance and layout minimize ringing, and the 10–20 V VCC supply aligns with typical SiC gate requirements (e.g., 15–18 V). Its 130 mA/270 mA peak output current supports gate charges up to ~30 nC at 100 ns switching speeds, but external gate resistors must be selected to limit di/dt-induced overshoot.

Is there an internal bootstrap diode in IR2101PBF?

No - the IR2101PBF does not integrate a bootstrap diode. An external fast-recovery or Schottky diode must be placed between VCC and VB to charge the bootstrap capacitor during low-side conduction. This design allows flexibility in diode selection for optimized recovery time and leakage performance.

How does IR2101PBF differ from IR2102PBF?

The IR2101PBF features in-phase logic inputs (HIN→HO, LIN→LO), whereas IR2102PBF provides out-of-phase inputs (HIN→HO, LIN→!LO). This makes IR2101 ideal for independent PWM control of both sides, while IR2102 suits complementary drive schemes where one input controls both outputs inversely - critical for avoiding shoot-through in basic half-bridge implementations.

IR2101PBF Specifications

Product attributes
Attribute value
Manufacturer:
International Test Instruments Corporation
Series:
-
Package/Case:
8-DIP (0.300", 7.62mm)
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
IGBT, N-Channel MOSFET
Voltage - Supply:
10V ~ 20V
Logic Voltage - VIL, VIH:
0.8V, 3V
Current - Peak Output (Source, Sink):
210mA, 360mA
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
600 V
Rise / Fall Time (Typ):
100ns, 50ns
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
8-PDIP

IR2101PBF FAQ

1.How can I place an order for IR2101PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IR2101PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IR2101PBF reliable?

The price and inventory of IR2101PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IR2101PBF is usually 5 days.

3.What payment methods are accepted for IR2101PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IR2101PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IR2101PBF?

IR2101PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IR2101PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IR2101PBF?

For technical support, including IR2101PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IR2101PBF requirements.

6.How does Aetrix verify that IR2101PBF is sourced from the original manufacturer or authorized distributors?

All IR2101PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IR2101PBF meets industry standards.

7.What is the process for return or replacement of IR2101PBF?

All IR2101PBF units undergo pre-shipment inspection (PSI). If there is an issue with IR2101PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IR2101PBF part is unused and in its original packaging.

Return procedure for IR2101PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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