Infineon Technologies IR2102SPBF

Overview

IR2102SPBF from Infineon Technologies is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs, featuring independent high-side (HO) and low-side (LO) outputs with out-of-phase logic inputs. It supports floating operation up to +600 V offset, delivers ±130 mA / ±270 mA peak output current, and operates with 10–20 V gate supply. It is used in half-bridge motor drives and SMPS inverters requiring robust bootstrap-based high-side switching.

For engineers reviewing the IR2102SPBF datasheet, IR2102SPBF pinout, IR2102SPBF application, or IR2102SPBF equivalent, key selection criteria include its 600 V offset tolerance, matched 160 ns / 150 ns propagation delays, 50 ns delay matching between channels, 3.3 V/5 V/15 V logic compatibility, and undervoltage lockout thresholds at 7.4–9.8 V on VCC.

Technical Context

The IR2102SPBF integrates a high-voltage level shifter and latch-immune CMOS logic to enable reliable high-side drive in bootstrap configurations. Its floating channel uses proprietary HVIC technology to sustain dV/dt transients up to 50 V/ns while maintaining logic integrity across VS from –5 V to +600 V.

Unlike the IR2101, the IR2102 implements inverted logic: HIN and LIN inputs are out of phase with their respective HO and LO outputs. This enables direct complementary drive of high- and low-side switches without external inversion logic in half-bridge topologies.

Key Specifications

Pinout & Package

IR2102SPBF is housed in an 8-lead SOIC package (body width 3.9 mm, JEDEC MS-012), surface-mount compatible with standard reflow profiles and RoHS-compliant lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IR2101SPBF, the IR2102SPBF eliminates external inversion hardware but requires matching control logic polarity; versus IRS2007PBF, it offers faster propagation and tighter delay matching at the cost of lacking an integrated bootstrap diode.

Availability

IR2102SPBF is available at Aetrix Electronics and suitable for motor control, switch-mode power supply, industrial inverter, and Class-D audio amplifier designs requiring stable component supply and long-term manufacturability.

Supply support for IR2102SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IR21xx family targets high-voltage gate driving in energy-efficient power conversion systems, emphasizing ruggedness, timing precision, and bootstrap simplicity for cost-sensitive industrial and consumer inverters.

FAQ

What is the maximum allowable dV/dt at the VS pin?

The IR2102SPBF is rated for dV/dt immunity up to 50 V/ns at the VS pin, verified per manufacturer test conditions. This specification ensures reliable operation during fast-switching events in high-power inverters where parasitic ringing may exceed 30 V/ns. Exceeding this limit risks false triggering of the high-side driver or logic upset, especially at elevated temperatures.

Can IR2102SPBF drive both MOSFETs and IGBTs?

Yes, IR2102SPBF is explicitly qualified to drive both N-channel power MOSFETs and IGBTs, as confirmed in the product summary and absolute maximum ratings. Its 130 mA/270 mA peak output current and 10–20 V gate supply range match typical gate charge requirements for devices up to 50 A/600 V. Layout guidelines recommend minimizing loop inductance to preserve edge speed with IGBTs having higher Qg.

Is a bootstrap diode required externally?

Yes, an external fast recovery bootstrap diode is required between VCC and VB to charge the bootstrap capacitor during low-side conduction. The IR2102SPBF does not integrate this diode-unlike IRS2007PBF-so a Schottky or ultrafast diode (e.g., 1N4148W, MURS120) must be placed with minimal trace length to avoid voltage drop and ensure reliable high-side turn-on at high duty cycles.

How does the out-of-phase logic affect PCB layout?

The out-of-phase logic (HIN/LIN active-high → HO/LO active-low) simplifies routing in half-bridge layouts by allowing identical control signal traces to both inputs without polarity inversion. However, firmware must generate complementary PWM signals-i.e., when HIN is high, HO is low-so timing-critical applications require careful dead-time insertion in the controller to prevent shoot-through despite matched propagation delays.