Infineon Technologies IR2301SPBF

Overview

IR2301SPBF from Infineon Technologies is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs, featuring independent high-side (up to +600 V) and low-side output channels with matched propagation delay (≤50 ns), 5–20 V gate drive supply range, and 3.3/5/15 V logic compatibility. It enables half-bridge motor control and SMPS topologies requiring robust bootstrap-based high-side switching.

For engineers reviewing the IR2301SPBF datasheet, IR2301SPBF pinout, IR2301SPBF application, or IR2301SPBF equivalent, key selection criteria include floating channel dV/dt immunity (50 V/ns), undervoltage lockout thresholds (VCCUV+ = 4.1 V typ), and thermal resistance (RthJA = 200 °C/W for SOIC package) in industrial power conversion designs.

Technical Context

The IR2301SPBF integrates proprietary HVIC technology for monolithic high-side level shifting and latch-immune CMOS logic. Its floating channel supports VS offset from –5 V to +600 V, with UV detection on both VCC and VB supplies and pulse-filtered input stages to suppress noise-induced false triggering.

Propagation delays are tightly matched between high-side and low-side channels (MT ≤ 50 ns), and outputs are in-phase with inputs. The driver uses separate COM and VS returns, allowing ±5 V ground offset tolerance between logic and power domains.

Key Specifications

Pinout & Package

IR2301SPBF is housed in an 8-lead SOIC package (IR2301S variant), with gull-wing leads, RoHS-compliant lead-free finish, and standard JEDEC MS-012AC footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IR2101SPBF and IRS2004PBF, the IR2301SPBF uniquely balances 3.3 V logic compatibility, ≤50 ns delay matching, and 600 V dV/dt immunity-making it optimal for high-efficiency, MCU-driven half-bridge systems demanding timing fidelity and wide supply flexibility.

Availability

IR2301SPBF is available at Aetrix Electronics and suitable for motor drives, industrial SMPS, solar microinverters, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for IR2301SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.

The IR2301SPBF belongs to Infineon's legacy HVIC (High-Voltage IC) gate driver product line, designed specifically for cost-sensitive, high-reliability half-bridge power conversion in industrial and renewable energy applications.

FAQ

What is the maximum allowable dV/dt at the VS pin?

The IR2301SPBF is rated for 50 V/ns dV/dt at the VS pin under all operating conditions. This specification ensures immunity to false triggering during fast high-side switching events in 600 V systems. Exceeding this rate may cause unintended high-side conduction due to capacitive coupling into the level-shifting circuitry, especially at elevated temperatures or reduced supply voltages.

Can IR2301SPBF drive both MOSFETs and IGBTs?

Yes-the IR2301SPBF is explicitly characterized for driving both N-channel power MOSFETs and IGBTs. Its 200 mA peak high-side and 350 mA peak low-side pulsed output currents, combined with 5–20 V gate drive capability, support typical gate charge requirements of 10–100 nC devices. Application Note AN-978 confirms validated use with IRG4PC50U and IRFP4668 in hard-switched topologies.

Is bootstrap operation mandatory for the high-side channel?

Bootstrap operation is the intended and validated configuration for high-side drive, using VB and VS pins with an external capacitor. While the floating channel architecture technically allows isolated DC supplies, the device lacks internal charge pumps or regulators-so sustained high-side conduction without bootstrap replenishment will cause UVLO due to VB droop. Design Tip DT97-3 specifies minimum bootstrap capacitor sizing based on switching frequency and Qg.

What is the purpose of the COM and VS separation?

COM serves as the reference for logic inputs (HIN/LIN), low-side output (LO), and VCC supply, while VS is the return for the high-side output (HO) and floating supply (VB). This separation enables the high-side driver to operate with its source/emitter swinging up to +600 V relative to COM-critical for half-bridge topologies. The ±5 V offset tolerance between COM and VS accommodates PCB layout-induced ground differentials without compromising functionality.