Infineon Technologies IR2301STRPBF

Overview

IR2301STRPBF from Infineon Technologies (formerly International Rectifier) is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs, featuring independent high-side (HO) and low-side (LO) outputs with 600 V floating channel capability, 220 ns typical turn-on propagation delay, 5–20 V gate drive supply range, and 3.3 V/5 V/15 V logic-compatible inputs. It enables half-bridge motor control in industrial inverters.

For engineers reviewing the IR2301STRPBF datasheet, IR2301STRPBF pinout, IR2301STRPBF application, or IR2301STRPBF equivalent, key selection criteria include high-side dV/dt immunity up to 50 V/ns, matched HS/LS propagation delay ≤50 ns, undervoltage lockout on both VCC and VB supplies, and SOIC-8 package compatibility with bootstrap gate drive topologies.

Technical Context

The IR2301STRPBF integrates a high-voltage level shifter and latch-immune CMOS logic to enable robust high-side operation up to +600 V referenced to COM. Its floating channel uses proprietary HVIC technology with built-in pulse filtering and UV detection for VS and VCC.

It supports independent logic inputs (HIN/LIN), delivers in-phase outputs (HO/LO), and maintains ±5 V ground offset tolerance between logic and power grounds. Propagation delays are tightly matched (≤50 ns max difference) across temperature and supply voltage ranges.

Key Specifications

Pinout & Package

IR2301STRPBF is housed in an 8-lead SOIC package (body width 3.9 mm, JEDEC MS-012AC), surface-mount compatible with standard reflow profiles and rated for 150 °C junction temperature.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IRS2301SPBF, IR2301STRPBF offers adequate noise immunity for most industrial inverters at lower cost; versus IR2101STRPBF, it adds 3.3 V logic support and tighter delay matching-critical for high-efficiency BLDC and microinverter designs.

Availability

IR2301STRPBF is available at Aetrix Electronics and suitable for industrial motor inverters, brushless DC motor drivers, solar microinverters, and UPS half-bridge stages requiring stable component supply and long-term production continuity.

Supply support for IR2301STRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.

The IR2301STRPBF belongs to Infineon's legacy IR family of high-voltage gate drivers, designed specifically for cost-sensitive, high-reliability half-bridge motor control and power conversion applications.

FAQ

What is the maximum allowable dV/dt at the VS pin?

The IR2301STRPBF is rated for 50 V/ns dV/dt at the VS pin under normal operating conditions. This specification ensures immunity to false triggering during fast high-side switching transients in 400 V AC line applications. Exceeding this rate may cause unintended level-shift errors or temporary output glitches, especially near temperature extremes.

Can IR2301STRPBF drive SiC MOSFETs?

IR2301STRPBF can drive discrete SiC MOSFETs in low-frequency (<50 kHz), non-critical gate timing applications, but lacks the peak current (≥2 A), negative turn-off capability, and active Miller clamp features needed for robust high-speed SiC switching. For dedicated SiC gate driving, Infineon recommends the 1ED family or 2EDN series.

Is bootstrap capacitor charging supported internally?

No, IR2301STRPBF does not include internal bootstrap diode or charge pump circuitry. An external fast-recovery diode and appropriately sized ceramic capacitor (typically 0.1–1 µF X7R) must be used between VB and VS to maintain high-side supply during duty cycles >95%. The IC monitors VB via its UVLO circuit but provides no active regulation.

What is the minimum recommended dead time when using IR2301STRPBF?

Due to ≤50 ns propagation delay mismatch between HO and LO channels, a minimum dead time of 100 ns is recommended to prevent shoot-through in synchronous half-bridge configurations. This accounts for worst-case delay skew plus gate driver rise/fall time margins. Actual dead time should be validated with oscilloscope measurements under full-load thermal conditions.