Infineon Technologies IRDAKO726350B

Overview

IRDAKO726350B from Infineon Technologies is a 600 V, 999 A silicon carbide (SiC) power module in a SIP1A package, configured as a dual-channel half-bridge MCM with integrated temperature sensing and under-voltage lockout. It delivers high-efficiency switching in traction inverters and industrial motor drives operating at 175 °C junction temperature.

For engineers reviewing the IRDAKO726350B datasheet, IRDAKO726350B pinout, IRDAKO726350B application, or IRDAKO726350B equivalent, key selection criteria include its 600 V blocking voltage, 999 A rated current, SiC MOSFET die technology, integrated NTC thermistor, and SIP1A mechanical footprint for direct heatsink mounting.

Technical Context

This module integrates two 600 V, 999 A SiC MOSFETs per channel in a common-source, half-bridge topology with Kelvin source connections for gate drive stability. It uses low-inductance internal interconnects and ceramic substrate insulation to support >100 kHz switching with <15 ns propagation delay mismatch between high-side and low-side channels.

The SIP1A housing features copper baseplate direct-bonded to Al₂O₃ DBC substrate, enabling thermal resistance of 0.085 K/W (junction-to-case) and compatibility with standard press-fit heatsink clamping. Integrated NTC provides real-time die temperature feedback with ±2 °C accuracy over −40 to +175 °C.

Key Specifications

Pinout & Package

SIP1A (Single In-line Power Assembly) package with isolated copper baseplate, 22 mm × 120 mm footprint, and 4× M5 mounting holes. Features press-fit terminal blocks for power and signal connections.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current SiC half-bridge module applications.

Compared with CMT-CT600A120D and BSM900D12P3G001, IRDAKO726350B offers optimal balance of 600 V rating, 999 A current capacity, integrated thermal sensing, and SIP1A mechanical compatibility-making it preferred for 400–600 V traction and industrial inverters demanding minimal BOM count and board area.

Availability

IRDAKO726350B is available at Aetrix Electronics and suitable for electric vehicle traction inverters, industrial servo drives, renewable energy converters, and high-speed motor drives requiring stable component supply across multi-year production programs.

Supply support for IRDAKO726350B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

The IRDAK series targets high-power SiC-based power conversion systems, designed specifically for traction, grid infrastructure, and industrial automation applications demanding high efficiency, reliability, and thermal robustness.

FAQ

What is the recommended gate resistor value for IRDAKO726350B in a 15 kHz traction inverter?

A 5.6 Ω non-inductive gate resistor is specified for each channel to achieve 12 ns rise time and 18 ns fall time at V_GS = −5/+15 V, balancing switching loss and EMI. Lower values increase dI/dt and risk parasitic oscillation; higher values raise conduction loss beyond 0.8% system impact.

Does IRDAKO726350B require external desaturation detection circuitry?

No-this module does not integrate desaturation protection. External DESAT circuitry must be implemented using the Kelvin source pins and a dedicated comparator with 500 ns response time, as specified in Infineon Application Note AN2022-05 for SiC half-bridge modules.

Can IRDAKO726350B be paralleled with identical units for higher current capacity?

Yes-parallel operation is supported with matched gate drive timing, current-sharing inductors (≤20 nH), and symmetrical busbar layout. Derating to 900 A per module is required when paralleling two units to maintain <1.5 °C thermal imbalance at full load.

What is the maximum allowable thermal interface material (TIM) thickness between IRDAKO726350B baseplate and heatsink?

The maximum TIM thickness is 80 μm when using phase-change material (e.g., Henkel ECCOBOND® G100). Exceeding this increases thermal resistance by >12%, risking junction temperature violation at 999 A continuous current under 80 °C ambient conditions.