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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF100P218XKMA1

Name: IRF100P218XKMA1
Brand: Infineon Technologies
SKU: IRF100P218XKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF100P218XKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRF100P218XKMA1.pdf

Description:: MOSFET N-CH 100V 209A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF100P218XKMA1 from Infineon Technologies is a 100 V, 1.1 mΩ typ N-channel Trench MOSFET in PG-TO247-3 package, optimized for high-current synchronous rectification and DC-DC conversion. It delivers 209 A package-limited continuous drain current at TC=25°C, supports 175°C junction operation, and features 330 nC total gate charge with optimized Qrr (280 nC) for reduced switching loss in high-frequency power stages.

For engineers reviewing the IRF100P218XKMA1 datasheet, IRF100P218XKMA1 pinout, IRF100P218XKMA1 application, or IRF100P218XKMA1 equivalent, key selection criteria include RDS(on) stability over temperature, gate charge trade-offs for ZVS/ZCS topologies, SOA robustness under repetitive avalanche stress, and thermal interface compatibility with industrial heatsink mounting.

Technical Context

This device implements Infineon's StrongIRFET™ trench-gate process with optimized cell pitch and deep-trench shielding to achieve ultra-low RDS(on) while maintaining controlled Qgd (65 nC) and Crss (150 pF). Its 175°C rated silicon enables sustained operation in high-ambient environments without derating penalties seen in 150°C-rated alternatives.

The integrated body diode exhibits trr = 110 ns and Qrr = 280 nC at IF = 100 A, enabling efficient synchronous FET replacement in LLC and phase-shifted full-bridge converters. Thermal resistance RthJC = 0.27 °C/W ensures direct case-to-heatsink power transfer with minimal thermal bottlenecking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage compatible with 48 V–60 V bus architectures and 100 V automotive systems.
R_DS(on), typ	1.1 mΩ - Enables <1.1 W conduction loss at 100 A, critical for >98% efficiency in high-current server VRMs.
I_D (Package)	209 A - Package-limited continuous current defines PCB layout copper area and heatsink sizing requirements.
Q_g	330 nC - Gate drive energy requirement determines driver IC selection (e.g., 1.5 A peak minimum) and gate resistor value for EMI control.
E_AS	1050 mJ - Single-pulse avalanche capability supports reliable operation during output short-circuit events in unclamped topologies.
T_j max	175 °C - Enables operation in sealed enclosures or high-ambient industrial environments without forced airflow derating.
C_iss	24,000 pF - Input capacitance impacts gate drive loop stability and Miller effect susceptibility at >500 kHz switching.

Pinout & Package

PG-TO247-3 package with isolated metal tab (Drain-connected), standard through-hole mounting, and 0.27 °C/W junction-to-case thermal resistance. Pin 1: Gate; Pin 2: Drain; Pin 3: Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; requires low-inductance gate loop to suppress oscillation due to 0.6 Ω internal gate resistance.
Pin 2 (Drain)	High-side power node	Electrically connected to metal tab; must be isolated from heatsink unless system ground reference permits direct mounting.
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; trace inductance directly impacts switching speed and dV/dt-induced shoot-through risk.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.1 mΩ typ reduces conduction loss by >35% vs. legacy 2.2 mΩ 100 V MOSFETs in 100–200 A applications.
Optimized Q_rr	280 nC reverse recovery charge minimizes diode commutation loss and voltage overshoot in hard-switched synchronous rectifiers.
JEDEC-qualified reliability	Validated per JESD47/22 standards for 1000-cycle temperature cycling and 1000 h HTRB, ensuring field longevity in telecom infrastructure.
Halogen-free construction	Complies with IEC61249-2-21, supporting RoHS-compliant manufacturing and end-of-life recycling requirements.
175°C operation	Eliminates need for thermal derating in 85°C ambient designs, simplifying thermal margin analysis for industrial motor drives.

Applications

Server Voltage Regulator Modules

Industrial Motor Drive Inverters

Use Scenario: High-density 48 V input VRM delivering up to 600 A to AI accelerator GPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter, operating at 500–800 kHz with zero-voltage switching.

Use Value: 1.1 mΩ R_DS(on) limits conduction loss to <1.2 W per phase, enabling 98.1% peak efficiency without liquid cooling.

Use Scenario: 3-phase inverter stage for 15 kW servo drives in CNC machinery.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT gate-drive companion configuration, handling 120 A RMS motor current.

Use Value: 175°C rating allows full 209 A current capability at 85°C heatsink temperature, eliminating forced-air fans in enclosed cabinets.

Telecom Rectifier Modules

Onboard Charger for EVs

Use Scenario: 48 V output rectification in -48 V telecom power systems with 3000 W capacity.

IC Role / Device Role / Timing Role: Primary synchronous rectifier in phase-shifted full-bridge topology, switching at 200 kHz.

Use Value: 280 nC Q_rr and 110 ns t_rr reduce diode recovery loss by 42% versus standard Si MOSFETs, improving full-load efficiency to 96.7%.

Use Scenario: Bidirectional DC-DC stage in 11 kW OBC converting between 400 V battery and 48 V auxiliary network.

IC Role / Device Role / Timing Role: High-current switch in dual-active-bridge topology, conducting 150 A bidirectionally with soft switching.

Use Value: 1050 mJ E_AS withstands repetitive 100 A short-circuit events during fault recovery, meeting ISO 6469-3 functional safety requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 1.3 mΩ, Q_g = 290 nC, T_j max = 175°C, same PG-TO247-3 package	Lower gate charge improves switching efficiency above 1 MHz but higher R_DS(on) increases conduction loss at >150 A	Select when prioritizing high-frequency ZVS performance over peak current density.
IXFH100N10P	R_DS(on) = 1.2 mΩ, Q_g = 360 nC, T_j max = 150°C, PG-TO247-3 package	Higher gate charge demands stronger gate drivers; 150°C limit requires larger heatsink for same current rating	Select only if legacy design uses IXYS gate drivers and thermal management already accommodates lower temperature rating.

Compared with STL220N10F7 and IXFH100N10P, IRF100P218XKMA1 offers the lowest R_DS(on) among 100 V TO-247 devices, making it optimal for conduction-loss-dominated applications like high-current VRMs, while its balanced Q_g/Q_rr ratio maintains switching efficiency up to 800 kHz.

Availability

IRF100P218XKMA1 is available at Aetrix Electronics and suitable for server voltage regulator modules, industrial motor drive inverters, telecom rectifier modules, and onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IRF100P218XKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the StrongIRFET™ family-designed specifically for high-efficiency, high-current DC-DC conversion in datacenter, industrial, and automotive power systems where thermal resilience and conduction loss dominate system efficiency.

FAQ

What is the maximum continuous drain current for IRF100P218XKMA1 at 100°C case temperature?

At TC = 100°C, the silicon-limited continuous drain current is 341 A (per Table 2), but the package-limited rating remains 209 A regardless of temperature. Designers must respect the lower of the two values-209 A-for thermal reliability and solder joint integrity under sustained load.

Does IRF100P218XKMA1 support paralleling for higher current applications?

Yes-the device features tightly controlled R_DS(on) matching (1.1–1.28 mΩ) and positive temperature coefficient above 25°C, enabling stable current sharing. Parallel configurations require matched gate drive paths and symmetrical PCB layout to avoid dynamic imbalance from differing L_g and L_s.

How does the body diode performance compare to discrete Schottky solutions in synchronous rectification?

The integrated body diode achieves V_SD = 1.2 V at 100 A and T_j = 25°C, with trr = 110 ns and Q_rr = 280 nC. While Schottky diodes offer lower forward drop, this MOSFET's diode enables gate-controlled turn-off, eliminating reverse recovery loss entirely when used as a synchronous rectifier with proper timing control.

Is IRF100P218XKMA1 qualified for automotive under-hood applications?

No-it is not AEC-Q101 qualified. Though rated for 175°C operation and JEDEC-reliability tested, it lacks automotive-specific qualification including HTOL, ESD, and mechanical vibration testing required for under-hood deployment. Use only in industrial, telecom, or computing applications.

IRF100P218XKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 209A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.28mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 278µA

Gate Charge (Qg) (Max) @ Vgs:: 555 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 25000 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 556W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRF100P218XKMA1 FAQ

1.How can I place an order for IRF100P218XKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF100P218XKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF100P218XKMA1 reliable?

The price and inventory of IRF100P218XKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF100P218XKMA1 is usually 5 days.

3.What payment methods are accepted for IRF100P218XKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF100P218XKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF100P218XKMA1?

IRF100P218XKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF100P218XKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF100P218XKMA1?

For technical support, including IRF100P218XKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF100P218XKMA1 requirements.

6.How does Aetrix verify that IRF100P218XKMA1 is sourced from the original manufacturer or authorized distributors?

All IRF100P218XKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF100P218XKMA1 meets industry standards.

7.What is the process for return or replacement of IRF100P218XKMA1?

All IRF100P218XKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF100P218XKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF100P218XKMA1 part is unused and in its original packaging.

Return procedure for IRF100P218XKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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