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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF100P219XKMA1

Name: IRF100P219XKMA1
Brand: Infineon Technologies
SKU: IRF100P219XKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF100P219XKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRF100P219XKMA1.pdf

Description:: MOSFET N-CH 100V TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF100P219XKMA1 from Infineon is a 100 V, 203 A N-channel enhancement-mode Power MOSFET in PG-TO247-3 package, featuring 1.7 mΩ max R_DS(on) at V_GS = 10 V, 213 nC total gate charge, and 175 °C maximum junction temperature. It serves as a high-current primary-side switch in industrial DC-DC converters and motor drives.

For engineers reviewing the IRF100P219XKMA1 datasheet, IRF100P219XKMA1 pinout, IRF100P219XKMA1 application, or IRF100P219XKMA1 equivalent, key selection criteria include conduction loss minimization at high current, switching efficiency in hard-switched topologies, thermal robustness under sustained load, and JEDEC-qualified reliability for industrial environments.

Technical Context

This device employs trench-gate silicon technology optimized for low R_DS(on) × Q_g figure-of-merit (1.7 mΩ × 213 nC), enabling high-efficiency operation in 100 kHz–500 kHz switching applications. Its 175 °C rated junction supports derated operation in compact heatsink designs without forced airflow.

The integrated body diode exhibits 63 ns reverse recovery time and 111 nC Q_rr, making it suitable for synchronous rectification and freewheeling roles where diode performance impacts system efficiency and EMI. Gate plateau voltage is 4.4 V, supporting stable turn-on with standard 5 V or 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage for use in 48 V–72 V bus systems with safety margin.
R_DS(on), max	1.7 mΩ at V_GS = 10 V, I_D = 100 A - Enables <1.7 W conduction loss at 100 A, critical for high-current power stages.
I_D, cont	203 A at T_C = 25 °C - Supports peak-load capability in industrial motor inverters and UPS output stages.
Q_g, total	213 nC - Determines gate driver power requirement and switching transition time in hard-switched converters.
t_rr	63 ns - Limits diode reverse recovery energy loss and voltage overshoot during commutation.
T_j,max	175 °C - Allows operation in sealed enclosures or high-ambient industrial settings without thermal throttling.
R_thJC	0.3–0.44 °C/W - Enables direct mounting to heatsinks with predictable thermal path for thermal design.

Pinout & Package

IRF100P219XKMA1 uses the PG-TO247-3 package: isolated metal tab (drain), vertical leadframe, and RoHS-compliant lead plating. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives gate drive signal; requires ≥10 V for full enhancement; gate resistance is 1.2 Ω (typ).
Pin 2 (Drain)	High-side power terminal	Connected to main power rail; electrically tied to metal tab; carries full load current and fault current.
Pin 3 (Source)	Reference return path	Serves as local ground reference for gate drive; source inductance must be minimized to suppress ringing.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FOM	362 Ω·nC - Reduces combined conduction + switching losses in high-frequency SMPS and inverters.
JEDEC-qualified for industrial use	Validated per JESD47/22 - Ensures long-term reliability under thermal cycling, humidity, and bias stress.
Optimized body diode Q_rr	111 nC - Lowers reverse recovery loss and EMI generation compared to standard MOSFETs in freewheeling paths.
175 °C maximum junction temperature	Enables >25 °C higher operating limit than 150 °C-rated parts - reduces need for oversized heatsinks.
Pb-free, halogen-free construction	Complies with IEC61249-2-21 - Meets global environmental compliance requirements for industrial OEMs.

Applications

Industrial Motor Drives

Server & Telecom DC-DC Converters

Use Scenario: Three-phase inverter stage in 5–15 kW variable-frequency drives for pumps and compressors.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-pulse bridge configuration, switching at 8–16 kHz.

Use Value: 1.7 mΩ R_DS(on) reduces conduction loss by ~35% vs. comparable 2.5 mΩ devices, lowering heatsink cost and size.

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated LLC resonant converter for server VRMs.

IC Role / Device Role / Timing Role: Main power switch handling 100+ A peak drain current with tight dead-time control.

Use Value: 213 nC Q_g enables efficient gate driving at 300–500 kHz, maintaining ZVS across wide load range.

Uninterruptible Power Supplies (UPS)

EV Onboard Chargers (OBC) – AC/DC Stage

Use Scenario: Bidirectional DC-link switch in double-conversion UPS delivering 3–10 kVA output.

IC Role / Device Role / Timing Role: High-current unidirectional switch in boost PFC and inverter legs, operating at 16–25 kHz.

Use Value: 175 °C T_j,max allows sustained 200 A operation under overload conditions without thermal shutdown.

Use Scenario: Active clamp flyback or totem-pole PFC switch in 6.6 kW OBC front-end stage.

IC Role / Device Role / Timing Role: Fast-switching, high-voltage switch managing 100 V bus transients and line-frequency ripple.

Use Value: 63 ns t_rr and low Q_rr minimize diode-induced voltage spikes and snubber losses in high-dV/dt environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 1.5 mΩ (typ), Q_g = 195 nC, TO-247-3 package, 175 °C rating	Slightly lower conduction loss but higher gate charge density; less optimized body diode (t_rr = 85 ns)	Preferred when minimizing I²R loss dominates over switching loss; verify diode recovery in hard-commutated circuits.
IXFH180N10P	R_DS(on) = 1.8 mΩ (max), Q_g = 230 nC, TO-247AC package, 150 °C rating	Lower thermal limit restricts continuous current derating above 125 °C ambient; higher Q_g increases driver loss	Acceptable for cost-sensitive industrial designs with active cooling; not recommended for sealed or high-ambient deployments.

Compared with STL220N10F7 and IXFH180N10P, IRF100P219XKMA1 delivers superior thermal headroom (175 °C), balanced FOM (1.7 mΩ × 213 nC), and best-in-class body diode recovery (63 ns), making it optimal for thermally constrained, high-reliability industrial power stages.

Availability

IRF100P219XKMA1 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term industrial qualification.

Supply support for IRF100P219XKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

IRF100P219XKMA1 belongs to the StrongIRFET™ family-designed specifically for high-current, high-efficiency industrial power conversion where low R_DS(on), rugged body diodes, and extended temperature operation are mandatory.

FAQ

What is the maximum continuous drain current for IRF100P219XKMA1 at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 156 A, as specified in Table 2 of the Infineon datasheet Revision 2.2. This value accounts for thermal de-rating due to reduced heat dissipation capability at elevated case temperatures and assumes proper PCB copper area and heatsink interface.

Does IRF100P219XKMA1 have avalanche capability, and what is its rated single-pulse energy?

Yes, IRF100P219XKMA1 is rated for 464 mJ single-pulse avalanche energy (E_AS) with I_D = 100 A and R_L = 25 Ω, per Table 2. This rating validates its robustness against inductive switching transients in motor drive and converter applications without external clamping.

Can IRF100P219XKMA1 be used in synchronous rectification configurations?

Yes-the device's body diode has characterized t_rr = 63 ns and Q_rr = 111 nC, and its low R_DS(on) enables efficient channel conduction during synchronous gate control. However, external gate timing must ensure zero-voltage switching to avoid cross-conduction, especially at high frequencies.

What is the gate threshold voltage range, and how does it affect drive circuit design?

The gate threshold voltage (V_GS(th)) ranges from 2.3 V to 3.8 V at I_D = 278 μA. To ensure full enhancement and minimize R_DS(on), gate drive must deliver ≥10 V. A 5 V logic-level driver is insufficient; a dedicated gate driver with ≥12 V output and ≥2 A peak current is recommended for fast, reliable switching.

IRF100P219XKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 203A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 278µA

Gate Charge (Qg) (Max) @ Vgs:: 270 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12020 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 341W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRF100P219XKMA1 FAQ

1.How can I place an order for IRF100P219XKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF100P219XKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF100P219XKMA1 reliable?

The price and inventory of IRF100P219XKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF100P219XKMA1 is usually 5 days.

3.What payment methods are accepted for IRF100P219XKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF100P219XKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF100P219XKMA1?

IRF100P219XKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF100P219XKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF100P219XKMA1?

For technical support, including IRF100P219XKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF100P219XKMA1 requirements.

6.How does Aetrix verify that IRF100P219XKMA1 is sourced from the original manufacturer or authorized distributors?

All IRF100P219XKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF100P219XKMA1 meets industry standards.

7.What is the process for return or replacement of IRF100P219XKMA1?

All IRF100P219XKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF100P219XKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF100P219XKMA1 part is unused and in its original packaging.

Return procedure for IRF100P219XKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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