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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1010EL

Name: IRF1010EL
Brand: Infineon Technologies
SKU: IRF1010EL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1010EL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF1010EL.pdf

Description:: MOSFET N-CH 60V 84A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1010EL from International Rectifier is a 60V, 84A N-channel enhancement-mode power MOSFET in TO-262 (ISOTOP) package, featuring 12mΩ R_DS(on) at V_GS = 10V, fully avalanche-rated, and optimized for high-current DC-DC conversion and motor control. It operates up to 175°C junction temperature and delivers fast switching with 130nC total gate charge.

For engineers reviewing the IRF1010EL datasheet, IRF1010EL pinout, IRF1010EL application, or IRF1010EL equivalent, key selection criteria include its 60V V_DS, 12mΩ on-resistance, 330A pulsed drain current, avalanche energy rating (E_AS = 1180mJ), and thermal resistance (R_θJC = 0.75°C/W) - all critical for high-reliability power stage design.

Technical Context

This device uses International Rectifier's Advanced HEXFET® process to achieve low R_DS(on) per die area while maintaining rugged unclamped inductive switching capability. Its body diode exhibits 73ns typical reverse recovery time and 220nC Q_rr at I_F = 50A, enabling efficient synchronous rectification in hard-switched topologies.

The TO-262 package provides low-profile through-hole mounting with mechanical robustness and thermal performance comparable to TO-220 but with improved creepage and PCB footprint efficiency. Gate threshold voltage (2.0–4.0V) ensures compatibility with standard 5V and 10V logic-level drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60V - Maximum blocking voltage in power switch applications without breakdown risk under rated conditions.
R_DS(on)	12mΩ @ V_GS = 10V, I_D = 50A - Enables <1W conduction loss at 84A continuous current, reducing heatsink requirements.
I_D (T_C = 25°C)	84A - Continuous drain current rating at case temperature of 25°C, defining maximum steady-state power handling.
E_AS	1180mJ - Single-pulse avalanche energy rating supports reliable operation during inductive load turn-off transients.
Q_g	130nC - Total gate charge determines driver strength requirement and switching loss trade-off in PWM circuits.
R_θJC	0.75°C/W - Junction-to-case thermal resistance enables accurate thermal modeling when mounted on heatsink with interface material.
t_rr	73ns (typ.) - Body diode reverse recovery time directly impacts switching losses and EMI in freewheeling paths.

Pinout & Package

IRF1010EL uses the TO-262 (ISOTOP) package: a low-profile, through-hole variant of the D2Pak family with three leads and an isolated metal tab for direct heatsinking. The package supports high-current routing and offers enhanced thermal dissipation over standard TO-220 while maintaining compatibility with automated insertion equipment.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab - must be electrically isolated from chassis unless referenced to system ground; primary heat conduction path.
Source	Reference node for gate drive and current return	Low-inductance connection point for source loop; critical for minimizing switching oscillation and gate drive stability.
Gate	Control input for channel conduction	High-impedance MOS gate requiring controlled slew rate and adequate drive current (≥1A peak) to minimize switching time.

Key Features

Feature	Design Value
Fully avalanche-rated	Withstands 1180mJ single-pulse avalanche energy without failure - eliminates need for external snubbers in inductive switching.
Low R_DS(on)	12mΩ at 10V gate drive reduces conduction losses by >30% vs. legacy 60V MOSFETs, improving efficiency in 12V/24V systems.
Fast body diode	73ns t_rr and 220nC Q_rr enable use in synchronous rectification and bidirectional power flow without excessive diode loss.
175°C max junction temperature	Enables operation in sealed enclosures or high-ambient environments (e.g., automotive engine bays, industrial drives) without derating.
Lead-free construction	RoHS-compliant Pb-free plating and packaging meet global environmental compliance requirements for industrial and consumer electronics.

Applications

Motor Drive Inverter Stage

DC-DC Converter Primary Switch

Use Scenario: High-current H-bridge for 24V brushed DC motor control in industrial automation.

IC Role / Device Role / Timing Role: Main power switch in low-side configuration, conducting up to 84A continuously with PWM frequencies ≤20kHz.

Use Value: 12mΩ R_DS(on) limits I²R loss to <85W at full load, enabling compact heatsink design and >95% efficiency at rated current.

Use Scenario: Primary-side switch in 400W isolated forward converter for telecom power supply.

IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET operating at 100kHz with 50% duty cycle and 30V V_DS stress.

Use Value: 130nC Q_g and 73ns t_rr reduce total switching loss to <1.2W, supporting high-frequency operation without excessive driver complexity.

Uninterruptible Power Supply (UPS) Output Stage

Automotive Starter Relay Replacement

Use Scenario: Bidirectional power switch in 48V battery backup system with active inrush limiting.

IC Role / Device Role / Timing Role: Low-side switch controlling battery discharge path with integrated body diode freewheeling.

Use Value: Fully rated 1180mJ E_AS withstands repeated inductive turn-off events during load dump, eliminating discrete TVS protection.

Use Scenario: Solid-state replacement for electromechanical starter relay in 12V diesel engine cranking circuits.

IC Role / Device Role / Timing Role: High-pulse-current switch handling 330A peak during engine crank, with 175°C T_J rating for under-hood reliability.

Use Value: 330A I_DM and 0.75°C/W R_θJC allow direct bolt-on heatsinking to chassis, achieving >100,000-cycle lifetime vs. relay contact wear-out.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	R_DS(on) = 14mΩ, Q_g = 110nC, TO-220 package	Higher R_DS(on) increases conduction loss; lower Q_g eases gate drive but reduces avalanche margin (E_AS = 720mJ)	Preferred where gate drive is constrained and thermal margin exists; not suitable for high-reliability avalanche-prone designs.
IXTH84N60L2	R_DS(on) = 11.5mΩ, 600V rating, TO-247 package	Higher voltage rating adds cost and capacitance; larger package increases layout area and inductance	Only justified if system requires 600V headroom or higher dV/dt immunity; over-specified for 60V applications.

Compared with STP60NF06 and IXTH84N60L2, IRF1010EL offers optimal balance of low on-resistance, proven avalanche ruggedness, and TO-262 thermal-mechanical fit - making it preferred for 60V, high-current, thermally constrained industrial power stages.

Availability

IRF1010EL is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply across long production lifecycles.

Supply support for IRF1010EL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) was a pioneer in power semiconductor innovation, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for industrial and automotive markets.

The HEXFET® product line was engineered specifically for high-current, high-reliability power switching - emphasizing low R_DS(on), fast switching, and rugged avalanche performance in demanding real-world loads.

FAQ

What is the maximum continuous drain current for IRF1010EL at 100°C case temperature?

The maximum continuous drain current is 59A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-262 package and silicon, not gate drive capability. Operation above this current requires active cooling or reduced ambient temperature to maintain T_J ≤ 175°C.

Is IRF1010EL suitable for use with 5V microcontroller GPIOs?

No - its gate threshold voltage range is 2.0–4.0V, but full enhancement requires ≥10V V_GS to achieve rated 12mΩ R_DS(on). At 5V, R_DS(on) rises significantly (>50mΩ), increasing conduction loss and thermal stress. A dedicated gate driver (e.g., IR2110 or TC4427) is required for reliable operation.

Does IRF1010EL have a built-in ESD protection diode on the gate?

No - the device lacks integrated gate ESD protection. External Zener clamping (e.g., 12V TVS between gate and source) is recommended in assembly and handling to prevent gate oxide damage from static discharge, especially in automated manufacturing environments.

Can IRF1010EL replace IRF1010E in existing designs?

Yes - IRF1010EL is the lead-free, TO-262 packaged version of IRF1010E (TO-220). Pinout and electrical specs are identical, but the TO-262 offers lower profile, improved creepage, and slightly better thermal resistance (R_θJC = 0.75°C/W vs. 0.85°C/W). Mechanical redesign of PCB footprint and mounting is required.

IRF1010EL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 84A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3210 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF1010EL FAQ

1.How can I place an order for IRF1010EL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1010EL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1010EL reliable?

The price and inventory of IRF1010EL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1010EL is usually 5 days.

3.What payment methods are accepted for IRF1010EL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1010EL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1010EL?

IRF1010EL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1010EL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1010EL?

For technical support, including IRF1010EL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1010EL requirements.

6.How does Aetrix verify that IRF1010EL is sourced from the original manufacturer or authorized distributors?

All IRF1010EL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1010EL meets industry standards.

7.What is the process for return or replacement of IRF1010EL?

All IRF1010EL units undergo pre-shipment inspection (PSI). If there is an issue with IRF1010EL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1010EL part is unused and in its original packaging.

Return procedure for IRF1010EL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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