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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1010ESTRLPBF

Name: IRF1010ESTRLPBF
Brand: Infineon Technologies
SKU: IRF1010ESTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1010ESTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1010ESTRLPBF.pdf

Description:: MOSFET N-CH 60V 84A D2PAK

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Product details

Overview

IRF1010ESTRLPBF from Infineon Technologies (formerly International Rectifier) is a 60V, 84A N-channel D2Pak surface-mount power MOSFET with 12mΩ R_DS(on) at V_GS = 10V, fully avalanche-rated, and optimized for high-current DC-DC converters, motor drives, and uninterruptible power supplies requiring robust switching and thermal performance.

For engineers reviewing the IRF1010ESTRLPBF datasheet, IRF1010ESTRLPBF pinout, IRF1010ESTRLPBF application, or IRF1010ESTRLPBF equivalent, key selection criteria include its 130nC total gate charge, 73ns typical reverse recovery time, 1180mJ single-pulse avalanche energy rating, and D2Pak thermal resistance of 0.75°C/W junction-to-case - critical for high-reliability power stage design.

Technical Context

This HEXFET® device employs advanced silicon processing to minimize conduction loss while maintaining fast switching (t_d(on) = 12ns, t_f = 53ns) and ruggedness against voltage transients. Its integrated body diode features 1.3V forward drop at 50A and 73–110ns reverse recovery time under defined di/dt conditions.

The MOSFET operates across –55°C to +175°C junction temperature range, supports ±20V gate drive, and delivers 200W power dissipation at T_C = 25°C with linear derating of 1.4W/°C - enabling stable operation in thermally constrained industrial and automotive power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - maximum blocking voltage before avalanche onset; defines upper limit for bus voltage in buck converters and half-bridge topologies.
R_DS(on)	12mΩ @ V_GS = 10V - determines I²R conduction loss at 50A (30W), directly impacting thermal design and efficiency in high-current paths.
I_D (T_C = 25°C)	84A - continuous drain current rating at case temperature 25°C; limited by package thermal capacity, not silicon alone.
Q_g	130nC - total gate charge required for full turn-on; dictates gate driver strength needed to achieve target switching speed without excessive losses.
E_AS	1180mJ - single-pulse avalanche energy rating; enables reliable operation during inductive load switching or fault events without destructive failure.
R_θJC	0.75°C/W - junction-to-case thermal resistance; allows accurate junction temperature estimation when mounted on heatsink with known interface resistance.
t_rr	73ns (typ.) - body diode reverse recovery time; impacts commutation loss and EMI in synchronous rectification and freewheeling applications.

Pinout & Package

The IRF1010ESTRLPBF is housed in a D2Pak (TO-263) surface-mount package with three terminals: Drain (tab), Source (pin 2), and Gate (pin 1). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface to PCB copper or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to package backside	Must be soldered to large copper pour or heatsink for thermal management and low-inductance high-current return path.
Source (Pin 2)	Reference node for gate drive and current sensing	Low-inductance connection essential for stable gate control; often tied to ground plane or shunt resistor for current monitoring.
Gate (Pin 1)	Control input for channel conduction	Requires low-impedance drive (≤3.6Ω series resistance recommended) to manage 130nC charge and suppress oscillation during fast transitions.

Key Features

Feature	Design Value
Fully avalanche-rated	Withstands 1180mJ single-pulse avalanche energy without failure - eliminates need for external snubbers in inductive switching circuits.
Low R_DS(on) per die area	12mΩ at 10V gate drive enables >95% efficiency in 48V/50A DC-DC stages with minimal heatsinking requirements.
Fast body diode recovery	73ns typical t_rr and 220nC Q_rr reduce commutation loss and voltage overshoot in synchronous rectifiers and motor phase-legs.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3); compatible with standard reflow profiles up to 260°C peak.
High-temperature operation	Rated for continuous operation up to +175°C junction temperature - suitable for under-hood automotive and industrial motor control environments.

Applications

Motor Drive Inverter

DC-DC Converter Primary Switch

Use Scenario: High-current 3-phase BLDC inverter for HVAC compressors operating at 48V bus and 50A peak phase current.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack inverter topology; handles bidirectional current flow during PWM commutation.

Use Value: 12mΩ R_DS(on) limits conduction loss to <3W at 50A RMS, while 1180mJ E_AS ensures survival during short-circuit fault events.

Use Scenario: Primary-side switch in isolated 48V-to-12V LLC resonant converter for telecom power systems.

IC Role / Device Role / Timing Role: High-frequency hard-switched MOSFET operating at 200kHz with 50% duty cycle and 84A peak drain current.

Use Value: 130nC Q_g enables efficient gate driving with standard 2A peak drivers; 0.75°C/W R_θJC supports direct heatsink mounting for 200W dissipation.

Uninterruptible Power Supply (UPS) Output Stage

Industrial DC Motor Controller

Use Scenario: Bidirectional output H-bridge in 24V/10kVA online UPS delivering clean sine-wave output during battery backup mode.

IC Role / Device Role / Timing Role: High-current switching element handling 84A continuous load current and 330A pulsed surge during overload conditions.

Use Value: 330A I_DM pulsed rating and 175°C max junction temperature allow safe operation during 150% overload for 10 seconds without thermal shutdown.

Use Scenario: Field-oriented control (FOC) drive for 7.5kW industrial conveyor motor powered from 60V DC bus.

IC Role / Device Role / Timing Role: Phase-leg switch in three-phase inverter with active freewheeling via body diode during dead-time intervals.

Use Value: 1.3V V_SD body diode forward voltage and 73ns t_rr minimize freewheeling loss and reduce voltage spikes during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N6F7	60V, 110A, 9.5mΩ R_DS(on), TO-220 package, no avalanche rating	Lacks E_AS specification; requires external protection in inductive switching	Preferred where higher current and lower R_DS(on) outweigh need for built-in avalanche ruggedness
IXTP110N065T	65V, 110A, 6.5mΩ R_DS(on), TO-220, specified 1000mJ E_AS	Slightly higher V_DSS; lower R_DS(on) but larger package footprint and higher Q_g (155nC)	Better for space-constrained designs needing margin on voltage rating and conduction loss

Compared with STP110N6F7 and IXTP110N065T, IRF1010ESTRLPBF offers superior thermal performance (0.75°C/W vs. ~1.5°C/W for TO-220), guaranteed avalanche capability, and D2Pak surface-mount compatibility - making it optimal for high-power-density, reliability-critical board-level integration.

Availability

IRF1010ESTRLPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable lead-free sourcing.

Supply support for IRF1010ESTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor solutions, and automotive microcontrollers, with deep expertise in high-voltage and high-current discrete devices.

This part belongs to Infineon's legacy HEXFET® power MOSFET product line, designed specifically for high-efficiency, high-reliability power conversion in industrial motor control, renewable energy inverters, and enterprise power systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF1010ESTRLPBF supports 59A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2Pak package and must be validated against actual board layout, copper area, and heatsinking in the final design.

Does this MOSFET require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control switching speed and prevent oscillation. A 3.6Ω resistor is recommended for turn-off (per Figure 10 test conditions), while turn-on resistance should be selected based on driver capability and EMI constraints; typical values range from 2Ω to 10Ω for 50A applications.

Can IRF1010ESTRLPBF be used in synchronous rectification?

Yes - its body diode has characterized V_SD = 1.3V at 50A and t_rr = 73ns, enabling use in synchronous rectification topologies. However, external MOSFET control is required for optimal efficiency, as the internal diode is not optimized for ultra-low forward voltage like dedicated sync-rectifier FETs.

Is the D2Pak package lead-free and RoHS-compliant?

Yes - the "PBF" suffix confirms lead-free termination and full compliance with RoHS Directive 2011/65/EU. The device meets IPC-J-STD-020 MSL3 classification and is qualified for standard Pb-free reflow profiles with peak temperature up to 260°C.

IRF1010ESTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 84A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3210 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1010ESTRLPBF FAQ

1.How can I place an order for IRF1010ESTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1010ESTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1010ESTRLPBF reliable?

The price and inventory of IRF1010ESTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1010ESTRLPBF is usually 5 days.

3.What payment methods are accepted for IRF1010ESTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1010ESTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1010ESTRLPBF?

IRF1010ESTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1010ESTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1010ESTRLPBF?

For technical support, including IRF1010ESTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1010ESTRLPBF requirements.

6.How does Aetrix verify that IRF1010ESTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF1010ESTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1010ESTRLPBF meets industry standards.

7.What is the process for return or replacement of IRF1010ESTRLPBF?

All IRF1010ESTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1010ESTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1010ESTRLPBF part is unused and in its original packaging.

Return procedure for IRF1010ESTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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