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Infineon Technologies IRF1010EZSPBF
- Part No.:
- IRF1010EZSPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF1010EZSPBF.pdf
- Description:
- MOSFET N-CH 60V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,167
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Product details
Overview
IRF1010EZSPBF from Infineon Technologies (formerly International Rectifier) is a 60V, 75A N-channel D2PAK-packaged Power MOSFET with 8.5mΩ RDS(on) at VGS = 10V, 175°C maximum junction temperature, and rated for repetitive avalanche operation. It serves as a high-current, low-loss main switch in DC-DC converters, motor drives, and UPS inverters where fast switching and thermal robustness are critical.
For engineers reviewing the IRF1010EZSPBF datasheet, IRF1010EZSPBF pinout, IRF1010EZSPBF application, or IRF1010EZSPBF equivalent, key selection considerations include its 58nC total gate charge, 420pF output capacitance, 1.11°C/W junction-to-case thermal resistance, and body diode recovery time of 41–62ns - all directly impacting hard-switching efficiency and thermal design margins.
Technical Context
This device employs advanced HEXFET® silicon processing to achieve ultra-low on-resistance per die area while maintaining robust avalanche capability. Its 175°C TJ(max), 99mJ single-pulse avalanche energy (EAS), and 300mJ repetitive avalanche rating (EAR) enable reliable operation under transient overloads and inductive switching stress.
The MOSFET features a 2810pF input capacitance (Ciss) and 200pF reverse transfer capacitance (Crss), supporting stable gate drive with moderate Miller effect. Its body diode exhibits VSD = 1.3V at 51A and Qrr = 54–81nC, making it suitable for synchronous rectification and freewheeling in medium-frequency power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Maximum drain-source blocking voltage; defines safe operating range in 48V bus systems. |
| RDS(on) | 6.8–8.5mΩ @ VGS = 10V - Directly determines conduction loss (PCOND ≈ ID² × RDS(on)) at full load. |
| ID | 75A @ TC = 25°C - Continuous current rating under ideal heatsinking; derates to 34A at TC = 100°C. |
| Qg | 58–86nC - Total gate charge; sets minimum gate driver current requirement and impacts switching loss. |
| tr/tf | 90ns / 54ns - Rise/fall times at VDD = 30V, ID = 51A; constrains maximum practical switching frequency. |
| EAS | 99mJ - Single-pulse avalanche energy; enables unclamped inductive switching without failure if TJ ≤ 175°C. |
| RθJC | 1.11°C/W - Junction-to-case thermal resistance; used to calculate ΔTJ = PD × RθJC for heatsink sizing. |
Pinout & Package
IRF1010EZSPBF uses the D2PAK (TO-263) surface-mount package with exposed drain pad for thermal performance. Pin assignment is standardized across N-channel D2PAK MOSFETs: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Receives gate drive signal; requires ≥10V for full enhancement; sensitive to ESD (±20V max VGS). |
| Pin 2 (Drain) | High-side power terminal | Connected to PCB copper pour or heatsink; carries full load current and must be routed with low inductance. |
| Pin 3 (Source) | Reference/return terminal | Serves as local ground reference for gate drive; internal source inductance (LS = 7.5nH) affects switching waveform ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 6.8mΩ typical - Reduces conduction losses by >30% vs. legacy 60V MOSFETs at 50A, improving system efficiency. |
| 175°C TJ(max) | Rated junction temperature - Enables operation in high-ambient environments (e.g., industrial motor control enclosures) without derating. |
| Repetitive avalanche rated | 300mJ EAR at TJ = 25°C - Allows repeated inductive turn-off events (e.g., brushless DC motor phase commutation) without degradation. |
| Fast body diode | trr = 41–62ns, Qrr = 54–81nC - Minimizes reverse recovery loss and EMI during freewheeling in half-bridge topologies. |
| Lead-free & RoHS compliant | Pb-free plating and halogen-free molding compound - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for standard reflow. |
Applications
| Motor Drive Inverter | DC-DC Synchronous Rectifier |
|---|---|
|
Use Scenario: Half-bridge leg in 24–48V BLDC motor controllers for HVAC blowers and power tools. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 50–75A peak phase current with 20kHz PWM. Use Value: Low RDS(on) minimizes I²R heating during continuous conduction mode; fast tr/tf enables precise dead-time control. |
Use Scenario: Secondary-side synchronous rectifier in isolated 48V→12V telecom DC-DC converters. IC Role / Device Role / Timing Role: Body-diode-assisted or actively driven rectifier replacing Schottky diodes in forward or LLC topologies. Use Value: 1.3V VSD and low Qrr reduce conduction and recovery losses, increasing efficiency by 1.2–1.8% at 50A output. |
| Uninterruptible Power Supply (UPS) | Industrial DC Bus Switch |
|
Use Scenario: Bidirectional DC bus switch in online double-conversion UPS systems with 48V or 60V battery banks. IC Role / Device Role / Timing Role: Main isolation and current-path control MOSFET enabling battery-to-inverter and AC-to-battery charging paths. Use Value: Repetitive avalanche rating protects against bus transients during grid faults; 175°C rating supports fanless thermal design. |
Use Scenario: High-current load switch for programmable power supplies and test equipment requiring 60V/75A capacity. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays or contactors in automated manufacturing systems. Use Value: 340A pulsed current (IDM) handles surge loads; low gate charge enables fast turn-on (<100ns) for precise timing control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | 75V VDSS, 75A ID, 10.5mΩ RDS(on), TO-220 package | Higher RDS(on) increases conduction loss; through-hole mounting limits board density | Preferred where cost sensitivity outweighs thermal performance and surface-mount assembly is not required. |
| IXTH75N10L2 | 100V VDSS, 75A ID, 12.5mΩ RDS(on), TO-247 package | Higher voltage rating adds margin but degrades RDS(on); larger TO-247 footprint increases layout area | Chosen when 100V bus transients exceed 60V clamping capability, and thermal mass from TO-247 aids transient dissipation. |
Compared with STP75NF75 and IXTH75N10L2, IRF1010EZSPBF delivers the lowest RDS(on) in a surface-mount D2PAK, enabling higher power density and lower thermal resistance - critical for compact, fanless, or high-efficiency designs operating near 48V nominal rails.
Availability
IRF1010EZSPBF is available at Aetrix Electronics and suitable for motor drive inverters, DC-DC synchronous rectifiers, and uninterruptible power supply (UPS) systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRF1010EZSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap power devices.
This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, high-efficiency switching in industrial power conversion, motor control, and energy infrastructure applications.
FAQ
What is the maximum continuous drain current for IRF1010EZSPBF at 100°C case temperature?
The maximum continuous drain current at TC = 100°C is 34A, as specified in the Absolute Maximum Ratings table. This value reflects package-limited current due to thermal constraints, not silicon limitation - the silicon itself supports 75A at 25°C but cannot dissipate the resulting power at elevated case temperatures without exceeding 175°C junction limit.
Does IRF1010EZSPBF require a gate resistor for safe operation?
Yes - a gate resistor (typically 5–25Ω) is required to control dV/dt and di/dt during switching, suppress ringing caused by LS = 7.5nH and LD = 4.5nH, and prevent gate driver overload. The datasheet specifies RG = 25Ω for avalanche testing and recommends gate drive strength ≥2A peak to fully charge the 58–86nC gate within nanoseconds.
Can IRF1010EZSPBF be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (0.058V/°C) ensures inherent current sharing stability when paralleled. However, layout symmetry (matched gate and source inductance), identical gate drive timing, and thermal coupling between devices are essential to avoid current imbalance and localized overheating.
Is the body diode in IRF1010EZSPBF suitable for reverse recovery in hard-switched topologies?
Yes - with trr = 41–62ns and Qrr = 54–81nC, the intrinsic body diode supports moderate-frequency hard switching (≤100kHz) in half-bridge and synchronous buck applications. For higher frequencies or zero-voltage switching, external SiC Schottky diodes may be preferred to eliminate recovery loss entirely.
IRF1010EZSPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 51A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 86 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2810 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 140W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF1010EZSPBF FAQ
1.How can I place an order for IRF1010EZSPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF1010EZSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF1010EZSPBF reliable?
The price and inventory of IRF1010EZSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1010EZSPBF is usually 5 days.
3.What payment methods are accepted for IRF1010EZSPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1010EZSPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF1010EZSPBF?
IRF1010EZSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF1010EZSPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF1010EZSPBF?
For technical support, including IRF1010EZSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1010EZSPBF requirements.
6.How does Aetrix verify that IRF1010EZSPBF is sourced from the original manufacturer or authorized distributors?
All IRF1010EZSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1010EZSPBF meets industry standards.
7.What is the process for return or replacement of IRF1010EZSPBF?
All IRF1010EZSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1010EZSPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF1010EZSPBF part is unused and in its original packaging.
Return procedure for IRF1010EZSPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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