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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1010EZSTRLP

Name: IRF1010EZSTRLP
Brand: Infineon Technologies
SKU: IRF1010EZSTRLP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1010EZSTRLP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1010EZSTRLP.pdf

Description:: MOSFET N-CH 60V 75A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1010EZSTRLP from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for 60 V V_DSS, 8.5 mΩ R_DS(on) at V_GS = 10 V, and 75 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 90 ns), and rated repetitive avalanche capability up to T_jmax, making it suitable for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF1010EZSTRLP datasheet, IRF1010EZSTRLP pinout, IRF1010EZSTRLP application, or IRF1010EZSTRLP equivalent, key selection criteria include its low conduction loss at high current, thermal robustness in surface-mount power stages, body diode recovery performance (t_rr = 41–62 ns), and gate charge profile (Q_g = 58–86 nC) for optimized driver sizing.

Technical Context

This MOSFET employs advanced planar silicon processing to minimize on-resistance per die area while maintaining rugged unclamped inductive switching behavior. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers, and its dynamic dv/dt rating supports stable operation in noisy high-speed switching environments.

The device integrates a co-packaged intrinsic body diode with V_SD ≤ 1.3 V at 51 A and Q_rr = 54–81 nC, enabling synchronous rectification and freewheeling in buck, half-bridge, and H-bridge topologies without external diodes. Thermal design is supported by R_θJC = 1.11°C/W and validated transient impedance curves up to 100 ms pulses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in 48 V systems.
R_DS(on)	6.8–8.5 mΩ @ V_GS = 10 V - Directly determines I²R conduction loss in high-current paths (e.g., 75 A yields ≤48 W loss).
I_D (continuous)	75 A @ T_C = 25°C - Confirmed package-limited current handling for PCB-mounted heatsink applications.
Q_g	58–86 nC - Defines gate driver current demand and switching energy; impacts EMI and efficiency trade-offs.
t_r/t_f	90 ns / 54 ns - Enables >100 kHz switching in hard-switched topologies with controlled dV/dt.
E_AS	99 mJ (tested) - Quantifies single-pulse avalanche survivability during fault events like shoot-through or inductive kick.
T_J max	175°C - Allows sustained operation under high ambient or thermally constrained conditions without derating.

Pinout & Package

IRF1010EZSTRLP uses the D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard G-S-D order (left-to-right when viewed from top with marking side up and leads facing down).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current output path, tied to internal silicon substrate	Connected to PCB copper pour for heat dissipation and high-current return; electrically common with backside metal tab.
Source (S)	Current return node and reference for gate drive	Serves as power ground reference; critical for gate loop integrity and body diode forward conduction path.
Gate (G)	Control terminal for channel modulation	High-impedance input requiring low-inductance routing; sensitive to ringing due to Q_gd = 21–32 nC Miller charge.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	8.5 mΩ enables <10 W conduction loss at 30 A, reducing heatsink size in 48 V industrial power supplies.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_jmax, supporting robust motor control fault tolerance.
Fast body diode recovery	t_rr = 41–62 ns and Q_rr = 54–81 nC minimize reverse recovery losses in synchronous rectifiers.
175°C operating junction	Permits full-rated current delivery in sealed enclosures or high-ambient environments without thermal throttling.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Buck Converter

Use Scenario: High-current BLDC motor phase leg in 24–48 V e-bike or power tool controllers.

IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting freewheeling current during high-side off-time.

Use Value: 8.5 mΩ R_DS(on) reduces I²R loss at 50–70 A peak, while t_rr < 62 ns prevents cross-conduction during dead-time transitions.

Use Scenario: Primary-side high-current switch in 48 V to 12 V automotive or telecom buck converter.

IC Role / Device Role / Timing Role: Main power switch cycling at 100–300 kHz with gate driven by dedicated MOSFET driver IC.

Use Value: Q_g = 58–86 nC allows efficient drive with 1–2 A peak gate drivers; R_θJC = 1.11°C/W supports direct heatsink mounting.

Industrial Inverter Output Stage

UPS Inverter Bridge

Use Scenario: Output stage of 1–3 kVA single-phase inverter feeding AC loads from 48 V DC bus.

IC Role / Device Role / Timing Role: N-channel switch in H-bridge configuration, paired with complementary high-side driver and bootstrap circuitry.

Use Value: Repetitive avalanche rating ensures survival during short-circuit or overload transients without external snubbers.

Use Scenario: Bidirectional power switch in online UPS inverters managing battery-to-AC and AC-to-battery transfer.

IC Role / Device Role / Timing Role: Conduction path during both inverting and charging modes, leveraging low R_DS(on) and robust body diode.

Use Value: V_DSS = 60 V provides 20% margin over 48 V nominal battery, and 175°C T_Jmax accommodates intermittent overload heating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	75 V V_DSS, 10.5 mΩ R_DS(on), TO-220 package, higher Q_g (120 nC)	Requires through-hole assembly and larger heatsink; less suitable for high-density SMT designs	Select if higher voltage margin is needed and board space permits leaded packaging.
IXTP75N06T	60 V V_DSS, 7.5 mΩ R_DS(on), TO-220 package, lower Q_g (45 nC), no avalanche rating	Lacks repetitive avalanche validation; not recommended for inductive load switching without external protection	Prefer only in resistive or lightly inductive loads where fault energy is externally clamped.

Compared with STP75NF75 and IXTP75N06T, IRF1010EZSTRLP offers superior thermal interface via D2PAK, verified repetitive avalanche capability, and balanced gate charge-making it the optimal choice for compact, high-reliability SMT motor drives and DC-DC converters where fault robustness and layout density are critical.

Availability

IRF1010EZSTRLP is available at Aetrix Electronics and suitable for motor drive half-bridges, DC-DC synchronous buck converters, and industrial inverter output stages requiring stable component supply and long-term production continuity.

Supply support for IRF1010EZSTRLP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap technologies.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, designed specifically for high-current, medium-voltage switching applications in industrial motor control, power supplies, and uninterruptible power systems.

FAQ

What is the maximum continuous drain current for IRF1010EZSTRLP at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 51 A (per Fig. 9 in the datasheet), limited by thermal saturation of the D2PAK package rather than silicon capability. This reflects real-world derating when mounted on standard FR-4 PCBs without forced airflow or large heatsinks.

Does IRF1010EZSTRLP have a specified gate threshold voltage range?

Yes - V_GS(th) is specified from 2.0 V minimum to 4.0 V maximum at T_J = 25°C and I_D = 250 µA. This range ensures compatibility with both 3.3 V and 5 V microcontroller GPIOs when used with appropriate gate resistors and pull-downs.

Can IRF1010EZSTRLP be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (see Fig. 10) promotes current sharing across paralleled devices. However, matched gate drive layout, identical PCB copper area, and individual gate resistors are required to ensure balanced dynamic current distribution.

Is the body diode in IRF1010EZSTRLP optimized for fast recovery?

Yes - the intrinsic body diode has t_rr = 41–62 ns and Q_rr = 54–81 nC (at I_S = 51 A, di/dt = 100 A/µs), confirming optimization for high-frequency freewheeling in synchronous rectifiers and half-bridge topologies.

IRF1010EZSTRLP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 51A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1010EZSTRLP FAQ

1.How can I place an order for IRF1010EZSTRLP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1010EZSTRLP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1010EZSTRLP reliable?

The price and inventory of IRF1010EZSTRLP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1010EZSTRLP is usually 5 days.

3.What payment methods are accepted for IRF1010EZSTRLP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1010EZSTRLP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1010EZSTRLP?

IRF1010EZSTRLP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1010EZSTRLP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1010EZSTRLP?

For technical support, including IRF1010EZSTRLP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1010EZSTRLP requirements.

6.How does Aetrix verify that IRF1010EZSTRLP is sourced from the original manufacturer or authorized distributors?

All IRF1010EZSTRLP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1010EZSTRLP meets industry standards.

7.What is the process for return or replacement of IRF1010EZSTRLP?

All IRF1010EZSTRLP units undergo pre-shipment inspection (PSI). If there is an issue with IRF1010EZSTRLP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1010EZSTRLP part is unused and in its original packaging.

Return procedure for IRF1010EZSTRLP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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