My Inquiry
My Account
Infineon Technologies IRF1010NLPBF
- Part No.:
- IRF1010NLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF1010NLPBF.pdf
- Description:
- MOSFET N-CH 55V 85A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:8,182
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF1010NLPBF from Infineon Technologies (formerly International Rectifier) is a 55V, 85A N-channel D2PAK surface-mount power MOSFET with 11mΩ RDS(on) at VGS = 10V, fully avalanche-rated, and optimized for high-current DC-DC converters, motor drives, and UPS systems requiring robust switching and thermal performance.
For engineers reviewing the IRF1010NLPBF datasheet, IRF1010NLPBF pinout, IRF1010NLPBF application, or IRF1010NLPBF equivalent, key selection criteria include its 175°C junction rating, 120nC total gate charge, 69ns reverse recovery time, low 0.85°C/W junction-to-case thermal resistance, and D2PAK package compatibility with high-power PCB layouts.
Technical Context
This HEXFET® device uses advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining fast switching (td(on) = 13ns, tf = 48ns) and rugged unclamped inductive switching capability (EAS = 1030mJ). Its body diode exhibits VSD = 1.3V at 43A and trr = 69ns under standardized conditions.
The MOSFET operates across –55°C to +175°C, features ±20V gate tolerance, 0.058V/°C breakdown voltage temperature coefficient, and is lead-free per JEDEC J-STD-020. Thermal design is supported by validated RθJC = 0.85°C/W and RθJA = 40°C/W (1"² FR-4 board).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48V bus applications. |
| RDS(on) | 11mΩ @ VGS = 10V, ID = 43A - Enables <1W conduction loss at 85A continuous current with proper heatsinking. |
| ID (TC = 25°C) | 85A - Continuous drain current rating at case temperature 25°C; limited to 60A at 100°C case. |
| Qg | 120nC - Total gate charge determines driver strength requirement; impacts switching loss in hard-switched topologies. |
| trr | 69ns - Body diode reverse recovery time; critical for synchronous rectification and freewheeling path efficiency. |
| RθJC | 0.85°C/W - Junction-to-case thermal resistance enables direct heatsink mounting for high-power dissipation up to 180W. |
| EAS | 1030mJ - Single-pulse avalanche energy rating confirms ruggedness against inductive load transients without external snubbers. |
Pinout & Package
The IRF1010NLPBF is housed in a D2PAK (TO-263) surface-mount package with three terminals: Drain (tab), Source (pin 2), and Gate (pin 1). The exposed drain pad provides low-inductance, high-current conduction and serves as the primary thermal path to the PCB heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current-carrying terminal, electrically connected to package backside | Provides lowest possible inductance path for high di/dt switching; requires soldered thermal pad for rated power dissipation. |
| Source (Pin 2) | Reference node for gate drive and current sensing | Internal source bond wires contribute to LS inductance; layout must minimize loop area to reduce ringing during turn-off. |
| Gate (Pin 1) | Control electrode for channel formation | High input capacitance (Ciss = 3210pF) demands robust gate driver capable of sourcing/sinking ≥2A peak current. |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche-rated | Rated for 1030mJ single-pulse avalanche energy - eliminates need for external clamping in inductive switching circuits. |
| Ultra-low RDS(on) | 11mΩ at 10V gate drive - reduces conduction losses by >30% vs. legacy 55V MOSFETs in high-current 12–48V systems. |
| 175°C maximum junction temperature | Enables operation in sealed enclosures or high-ambient environments without derating below 100°C case temperature. |
| D2PAK thermal performance | 0.85°C/W RθJC - delivers 2× the power density of TO-220 equivalents when mounted on copper-clad PCBs. |
| Lead-free and RoHS-compliant | Meets JEDEC J-STD-020 reflow profile - supports automated SMT assembly without post-process lead removal. |
Applications
| Motor Drive Inverter | DC-DC Synchronous Rectifier |
|---|---|
Use Scenario: Half-bridge inverter stage in 24V/48V BLDC motor controllers driving fans, pumps, or power tools. IC Role / Device Role / Timing Role: High-side and low-side switching element handling bidirectional current up to 85A peak with PWM frequencies ≤20kHz. Use Value: Low RDS(on) minimizes I²R heating during continuous conduction mode; avalanche rating absorbs back-EMF spikes during commutation. | Use Scenario: Secondary-side synchronous rectifier in isolated 48V-to-12V telecom DC-DC converters. IC Role / Device Role / Timing Role: Replaces Schottky diode in forward topology, driven by transformer-coupled gate signal synchronized to primary switch. Use Value: 11mΩ on-resistance cuts conduction loss by ~65% vs. 40V Schottky; fast trr prevents shoot-through during dead-time transitions. |
| Uninterruptible Power Supply (UPS) | Industrial Battery Charger |
Use Scenario: Bidirectional buck-boost stage in online double-conversion UPS managing battery charge/discharge and AC line regulation. IC Role / Device Role / Timing Role: Main power switch in high-efficiency interleaved converter operating at 50–100kHz with 100% duty-cycle capability. Use Value: 175°C TJ rating ensures reliability under sustained overload; low Qg/Qgd ratio improves gate drive efficiency and EMI behavior. | Use Scenario: Primary-side switching transistor in resonant LLC charger for 48V Li-ion battery packs used in material handling equipment. IC Role / Device Role / Timing Role: Hard-switched or quasi-resonant switch in 100–300kHz range, handling 60A+ average output current. Use Value: Robust dv/dt immunity (3.6V/ns) prevents false turn-on in noisy industrial environments; low Coss (690pF) reduces capacitive switching loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP85NF55-08 | 55V, 85A, RDS(on) = 8.5mΩ, TO-220 package, no avalanche rating | Lower conduction loss but lacks avalanche ruggedness; requires external protection in inductive loads | Prefer where space allows through-hole mounting and transient protection is already implemented. |
| IXTH86N55L2 | 55V, 86A, RDS(on) = 9.2mΩ, TO-247 package, 100% avalanche tested | Higher thermal mass and superior RθJC (0.45°C/W), but larger footprint and higher cost | Choose for mission-critical 24/7 operation where thermal margin and long-term reliability outweigh size constraints. |
Compared with STP85NF55-08 and IXTH86N55L2, the IRF1010NLPBF offers optimal balance of surface-mount compatibility, proven avalanche robustness, and thermal performance in compact D2PAK form - making it ideal for high-volume, space-constrained industrial power stages.
Availability
IRF1010NLPBF is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial battery chargers requiring stable component supply and long-term manufacturing continuity.
Supply support for IRF1010NLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with roots in International Rectifier's pioneering HEXFET® technology.
The IRF1010NLPBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and energy infrastructure applications.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRF1010NLPBF supports 60A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and silicon, not electrical degradation. Operation above this current requires active cooling or reduced ambient temperature to maintain TJ ≤ 175°C.
Does the IRF1010NLPBF require a gate resistor for safe operation?
Yes - a gate resistor (typically 3.6Ω to 10Ω) is required to control dV/dt and prevent oscillation during switching. The device's 120nC total gate charge and 41nC Miller charge make it susceptible to ringing without proper gate drive impedance; values are validated in the datasheet's switching time test circuit (Fig. 10).
Can the IRF1010NLPBF be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (0.058V/°C) enables inherent current sharing when paralleled. Successful implementation requires matched gate drive paths, symmetrical PCB layout, and thermal coupling between devices to ensure uniform junction temperature rise across all units.
Is the D2PAK footprint compatible with standard reflow soldering processes?
Yes - the IRF1010NLPBF is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature tolerance up to 260°C for 10 seconds. Its D2PAK outline matches IPC-7351B SOIC-263-3 standards, and thermal pad soldering requires controlled stencil aperture and paste volume to ensure void-free attachment and optimal RθJC.
IRF1010NLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 43A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3210 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 180W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRF1010NLPBF FAQ
1.How can I place an order for IRF1010NLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF1010NLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF1010NLPBF reliable?
The price and inventory of IRF1010NLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1010NLPBF is usually 5 days.
3.What payment methods are accepted for IRF1010NLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1010NLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF1010NLPBF?
IRF1010NLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF1010NLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF1010NLPBF?
For technical support, including IRF1010NLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1010NLPBF requirements.
6.How does Aetrix verify that IRF1010NLPBF is sourced from the original manufacturer or authorized distributors?
All IRF1010NLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1010NLPBF meets industry standards.
7.What is the process for return or replacement of IRF1010NLPBF?
All IRF1010NLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1010NLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF1010NLPBF part is unused and in its original packaging.
Return procedure for IRF1010NLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF1010NLPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
