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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1010NSPBF

Name: IRF1010NSPBF
Brand: Infineon Technologies
SKU: IRF1010NSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1010NSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1010NSPBF.pdf

Description:: MOSFET N-CH 55V 85A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1010NSPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, designed for high-current DC-DC conversion, motor drive, and switching power supply output stages. It delivers 85 A continuous drain current at 25°C, 55 V V_DS, 11 mΩ R_DS(on) at V_GS = 10 V, and is fully avalanche-rated with 1030 mJ single-pulse energy capability.

For engineers reviewing the IRF1010NSPBF datasheet, IRF1010NSPBF pinout, IRF1010NSPBF application, or IRF1010NSPBF equivalent, key selection criteria include its low on-resistance for conduction loss minimization, fast switching (t_r = 76 ns, t_f = 48 ns), rugged 175°C junction temperature rating, and surface-mount D2PAK thermal performance (R_θJC = 0.85°C/W).

Technical Context

This HEXFET® device uses advanced silicon processing to achieve ultra-low R_DS(on) per die area while maintaining robust avalanche capability and fast dv/dt immunity (3.6 V/ns). Its gate charge profile (Q_g = 120 nC, Q_gd = 41 nC) supports efficient hard-switching in synchronous rectifiers and half-bridge topologies.

The integrated body diode exhibits V_SD = 1.3 V at 43 A and I_S = 43 A, with trr = 69–100 ns and Q_rr = 220–230 nC under specified conditions - enabling reliable freewheeling in inductive loads without external diode supplementation in many designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 48 V bus systems with margin against transients
R_DS(on)	11 mΩ @ V_GS = 10 V, I_D = 43 A - Enables <1 W conduction loss at 85 A with proper heatsinking
I_D (25°C)	85 A - Supports high-current output stages in industrial SMPS and battery-powered inverters
E_AS	1030 mJ - Withstands single-pulse inductive energy without failure in motor drive snubberless operation
Q_g	120 nC - Determines gate driver power requirement; compatible with standard 1–2 A peak drivers
t_r/t_f	76 ns / 48 ns - Enables >100 kHz switching in hard-switched converters with controlled EMI
R_θJC	0.85°C/W - Allows direct thermal coupling to heatsink for >100 W dissipation in compact layouts

Pinout & Package

The IRF1010NSPBF is housed in a surface-mount D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection. The package features three leads: Drain (tab), Source (pin 2), and Gate (pin 1), with pin 3 internally connected to Drain.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path and thermal interface	Electrically and thermally tied to PCB copper pour; requires solder mask defined thermal pad
Source (Pin 2)	Reference node for gate drive and current sensing	Low-inductance return path; critical for stable gate control in high-di/dt applications
Gate (Pin 1)	Control terminal for channel modulation	High-impedance input requiring <120 nC charge; sensitive to ESD and ringing

Key Features

Feature	Design Value
Ultra-low R_DS(on)	11 mΩ enables <1.5 W conduction loss at 60 A in 48 V systems, reducing heatsink size
Full avalanche rating	1030 mJ E_AS allows safe operation during inductive turn-off without external clamping
175°C max junction temperature	Supports operation in sealed enclosures or high-ambient environments without derating
Fast body diode recovery	trr ≤ 100 ns and Q_rr ≤ 230 nC reduce switching losses in synchronous rectification

Applications

Motor Drive Inverter Stage

DC-DC Synchronous Rectifier

Use Scenario: High-current H-bridge driving 24–48 V brushed/BLDC motors in industrial automation.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current up to 85 A with fast commutation.

Use Value: 11 mΩ R_DS(on) cuts conduction loss by >40% vs. legacy 20 mΩ devices, improving thermal margin at full load.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V–12 V telecom DC-DC converters.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes to reduce forward drop and improve efficiency.

Use Value: Body diode V_SD = 1.3 V at 43 A and fast trr enable >95% efficiency at 50 A output with minimal dead-time penalty.

Uninterruptible Power Supply (UPS) Output Stage

Industrial Battery Charger Switch

Use Scenario: Bidirectional buck-boost stage in 48 V UPS inverters delivering sustained 1000 W output.

IC Role / Device Role / Timing Role: High-current switching element in interleaved topology managing peak currents >70 A.

Use Value: Avalanche rating ensures reliability during grid fault transitions where V_DS spikes exceed 55 V momentarily.

Use Scenario: High-efficiency 48 V lithium-ion battery charger with programmable constant-current/constant-voltage regulation.

IC Role / Device Role / Timing Role: Primary-side switching transistor controlling transformer primary current in resonant LLC topology.

Use Value: 120 nC Q_g and 0.85°C/W R_θJC support 200 kHz operation with <50°C junction rise above ambient at 60 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP85NF55	R_DS(on) = 12 mΩ, V_DS = 55 V, Q_g = 130 nC, TO-220 package	Through-hole mounting; higher R_θJA limits power density in space-constrained designs	Preferred when board-level thermal management favors through-hole heatsinks over D2PAK copper pours
IXTH86N55L2	R_DS(on) = 10.5 mΩ, V_DS = 55 V, Q_g = 145 nC, TO-247 package	Larger footprint and higher gate charge increase driver complexity and layout area	Selected when maximum ruggedness and >150 W continuous dissipation are required beyond D2PAK limits

Compared with STP85NF55 and IXTH86N55L2, the IRF1010NSPBF offers optimal balance of surface-mount integration, thermal efficiency (0.85°C/W), and gate drive simplicity (120 nC), making it ideal for high-density 48 V power systems where PCB real estate and thermal coupling are critical.

Availability

IRF1010NSPBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for IRF1010NSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation via its acquisition of International Rectifier.

The HEXFET® product line was engineered specifically for high-efficiency, high-reliability power conversion - targeting industrial, telecom, and renewable energy systems demanding low conduction loss, fast switching, and rugged transient handling.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF1010NSPBF supports 60 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be verified against actual board layout, copper area, and airflow using the provided R_θJC = 0.85°C/W and R_θJA = 40°C/W values.

Is the IRF1010NSPBF lead-free and RoHS-compliant?

Yes, the "PbF" suffix confirms IRF1010NSPBF is lead-free and compliant with EU RoHS Directive 2011/65/EU. The device uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) requirements for surface-mount assembly.

Does the body diode support continuous reverse conduction in synchronous rectifier mode?

Yes - the integrated body diode is rated for continuous source current (I_S) up to 43 A at 25°C and pulsed source current (I_SM) up to 290 A. Its V_SD = 1.3 V and trr ≤ 100 ns allow reliable operation as a freewheeling path in synchronous buck converters without external diode parallel.

What gate voltage is required to fully enhance the channel?

A minimum V_GS of 10 V is required to achieve the specified R_DS(on) = 11 mΩ. The gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, but operation below 8 V results in significantly higher on-resistance and increased conduction loss - thus 10–15 V gate drive is recommended for full enhancement.

IRF1010NSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 43A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3210 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 180W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1010NSPBF FAQ

1.How can I place an order for IRF1010NSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1010NSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1010NSPBF reliable?

The price and inventory of IRF1010NSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1010NSPBF is usually 5 days.

3.What payment methods are accepted for IRF1010NSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1010NSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1010NSPBF?

IRF1010NSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1010NSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1010NSPBF?

For technical support, including IRF1010NSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1010NSPBF requirements.

6.How does Aetrix verify that IRF1010NSPBF is sourced from the original manufacturer or authorized distributors?

All IRF1010NSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1010NSPBF meets industry standards.

7.What is the process for return or replacement of IRF1010NSPBF?

All IRF1010NSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1010NSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1010NSPBF part is unused and in its original packaging.

Return procedure for IRF1010NSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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