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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1010NSTRRPBF

Name: IRF1010NSTRRPBF
Brand: Infineon Technologies
SKU: IRF1010NSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1010NSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1010NSTRRPBF.pdf

Description:: MOSFET N-CH 55V 85A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1010NSTRRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode D2PAK surface-mount power MOSFET designed for high-current DC-DC conversion, motor drive, and switching power supply output stages. It delivers 85 A continuous drain current at 25°C, 55 V drain-source breakdown voltage, 11 mΩ R_DS(on) at V_GS = 10 V, and is fully avalanche-rated for robustness in inductive load switching - deployed in industrial UPS inverters and automotive body control modules.

For engineers reviewing the IRF1010NSTRRPBF datasheet, IRF1010NSTRRPBF pinout, IRF1010NSTRRPBF application, or IRF1010NSTRRPBF equivalent, key selection criteria include its 175°C junction rating, 120 nC total gate charge, 69 ns reverse recovery time, low thermal resistance (0.85°C/W junction-to-case), and D2PAK package compatibility with high-power PCB layouts requiring >2 W dissipation.

Technical Context

This HEXFET® device uses advanced silicon processing to minimize on-resistance per die area while maintaining fast switching (t_d(on) = 13 ns, t_f = 48 ns) and rugged unclamped inductive switching capability. Its integrated body diode exhibits 1.3 V forward drop at 43 A and 220 nC reverse recovery charge, enabling synchronous rectification in buck converters without external diodes.

The device operates across –55°C to +175°C junction temperature range, supports ±20 V gate drive, and features 0.058 V/°C V_(BR)DSS temperature coefficient - critical for stable overvoltage protection in wide-temperature industrial environments. Thermal design leverages low R_θJC (0.85°C/W) and validated FR-4 PCB mounting per AN-994.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage in off-state; defines upper limit for bus voltage in 48 V systems.
R_DS(on)	11 mΩ @ V_GS = 10 V, I_D = 43 A - Directly determines conduction loss (P_cond ≈ I² × 0.011 Ω) in high-current paths.
I_D (25°C)	85 A - Continuous DC current capability at case temperature ≤25°C; limited to 60 A at 100°C.
Q_g	120 nC - Total gate charge required for full turn-on; dictates driver strength and switching loss in hard-switched topologies.
t_rr	69 ns - Body diode reverse recovery time; impacts shoot-through risk and EMI in synchronous buck or half-bridge configurations.
E_AS	1030 mJ - Single-pulse avalanche energy rating; enables reliable operation during inductive turn-off transients without snubbers.
R_θJC	0.85°C/W - Junction-to-case thermal resistance; allows direct heatsink attachment for thermal management in high-power density designs.

Pinout & Package

The IRF1010NSTRRPBF is housed in a D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. The package supports high-current routing and provides lowest R_DS(on) among standard SMT power packages.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically and thermally connected to large copper pad; must be soldered to PCB ground plane or heatsink for thermal performance.
Source	Reference node for gate drive and current return	Low-inductance source connection critical for minimizing gate oscillation and ensuring clean switching waveforms.
Gate	Control input for channel conduction	High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD and requires series resistor (3.6 Ω typical) for damping.

Key Features

Feature	Design Value
Fully avalanche-rated	1030 mJ single-pulse energy handling ensures survival during unclamped inductive switching events without derating.
Ultra-low R_DS(on)	11 mΩ enables <1 W conduction loss at 30 A, reducing heatsink size and improving efficiency in 48 V battery systems.
Fast body diode	69 ns t_rr and 220 nC Q_rr allow use as synchronous rectifier in high-frequency (>100 kHz) DC-DC converters.
175°C max junction	Enables operation in sealed enclosures or high-ambient environments (e.g., under-hood automotive) without forced air cooling.
Lead-free & RoHS-compliant	Meets IPC/JEDEC J-STD-020 reflow profile; compatible with standard Pb-free assembly processes up to 300°C for 10 s.

Applications

Motor Drive Inverter Stage

Industrial UPS Output Switch

Use Scenario: High-current H-bridge driving 3-phase BLDC motors in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element controlling phase current commutation with 10–20 kHz PWM frequency.

Use Value: 11 mΩ R_DS(on) reduces I²R losses by >35% vs. legacy 20 mΩ devices, enabling 15% higher torque density at same thermal footprint.

Use Scenario: Bidirectional DC link switch in 3 kVA online UPS converting battery DC to AC output via full-bridge inverter.

IC Role / Device Role / Timing Role: Main power switch in high-side/low-side pairs handling 85 A peak load current during battery backup mode.

Use Value: 1030 mJ E_AS rating eliminates need for external clamping circuits during grid-fail transitions, simplifying BOM and layout.

Synchronous Buck Converter

Automotive Body Control Module

Use Scenario: 12 V → 3.3 V/20 A point-of-load regulator powering FPGA core logic in telecom baseband units.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diode to reduce forward drop and improve light-load efficiency.

Use Value: 1.3 V V_SD and 69 ns t_rr enable >92% efficiency at 500 kHz switching, exceeding JEDEC JESD22-A108 reliability requirements.

Use Scenario: Load switch for HVAC blower motor and seat heater control in Class-D vehicle ECUs.

IC Role / Device Role / Timing Role: Protected high-current switch interfacing microcontroller GPIO to 40 A resistive/inductive loads.

Use Value: –55°C to +175°C operating range meets AEC-Q101 stress test requirements; 290 A pulsed rating handles cold-cranking surge currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP85NF55-08	55 V V_DSS, 85 A I_D, 8.5 mΩ R_DS(on), TO-220 package	Through-hole mounting only; lacks D2PAK thermal interface and surface-mount scalability	Select when board-level reworkability and mechanical stability outweigh SMT density needs.
IXTP85N055T	55 V V_DSS, 85 A I_D, 5.5 mΩ R_DS(on), TO-220AB package	Lower R_DS(on) but higher Q_g (145 nC); not avalanche-rated	Prefer for ultra-low conduction loss in fixed-frequency SMPS where avalanche stress is absent.

Compared with STP85NF55-08 and IXTP85N055T, the IRF1010NSTRRPBF uniquely balances SMT manufacturability, 175°C operation, and guaranteed avalanche ruggedness - making it optimal for space-constrained, thermally aggressive, and inductive-load applications where reliability trumps marginal R_DS(on) reduction.

Availability

IRF1010NSTRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and automotive body control modules requiring stable component supply across extended product lifecycles.

Supply support for IRF1010NSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with roots in International Rectifier's pioneering HEXFET® technology.

The IRF1010NSTRRPBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and transportation power systems where thermal resilience and ruggedness are non-negotiable.

FAQ

What is the maximum allowable gate-to-source voltage for IRF1010NSTRRPBF?

The absolute maximum V_GS is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with 12–15 V used in high-speed applications to reduce switching losses - always using a series gate resistor (3.6 Ω typical) to damp ringing and limit peak current.

Can IRF1010NSTRRPBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (0.058 V/°C) enables inherent current sharing. For stable paralleling, match devices from same lot, use symmetrical PCB layout with Kelvin source connections, and ensure identical gate drive impedance (<5% variation) to prevent dynamic imbalance during switching transitions.

Does IRF1010NSTRRPBF require a heatsink in typical applications?

A heatsink is required for continuous operation above ~25 A at ambient temperatures >50°C. With R_θJC = 0.85°C/W and R_θCA ≈ 40°C/W (PCB mounted), junction temperature exceeds 175°C at 85 A without thermal enhancement. A 10 cm² copper pour with thermal vias reduces R_θJA to ~25°C/W, enabling 45 A continuous current at 70°C ambient.

Is IRF1010NSTRRPBF compliant with automotive qualification standards?

While not AEC-Q101 certified out-of-box, the device meets all underlying stress test conditions (e.g., 175°C T_J, 1030 mJ E_AS, HTRB, HTGB) and is widely used in automotive body control modules. Customers must perform system-level validation per ISO/TS 16949; Infineon offers qualified equivalents (e.g., IPB080N04LG) for full AEC-Q101 compliance.

IRF1010NSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 43A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3210 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 180W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1010NSTRRPBF FAQ

1.How can I place an order for IRF1010NSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1010NSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1010NSTRRPBF reliable?

The price and inventory of IRF1010NSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1010NSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRF1010NSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1010NSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1010NSTRRPBF?

IRF1010NSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1010NSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1010NSTRRPBF?

For technical support, including IRF1010NSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1010NSTRRPBF requirements.

6.How does Aetrix verify that IRF1010NSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF1010NSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1010NSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRF1010NSTRRPBF?

All IRF1010NSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1010NSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1010NSTRRPBF part is unused and in its original packaging.

Return procedure for IRF1010NSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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