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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1010ZSTRLPBF

Name: IRF1010ZSTRLPBF
Brand: Infineon Technologies
SKU: IRF1010ZSTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1010ZSTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1010ZSTRLPBF.pdf

Description:: MOSFET N-CH 55V 75A D2PAK

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Product details

Overview

IRF1010ZSTRLPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for 55V V_DSS, 7.5 mΩ R_DS(on) at V_GS = 10 V, and 75 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 150 ns, t_f = 92 ns), and rated repetitive avalanche energy up to 360 mJ.

For engineers reviewing the IRF1010ZSTRLPBF datasheet, IRF1010ZSTRLPBF pinout, IRF1010ZSTRLPBF application, or IRF1010ZSTRLPBF equivalent, key selection criteria include on-resistance vs. thermal derating, gate charge (Q_g = 63–95 nC), body diode recovery (Q_rr = 15–23 nC, t_rr = 22–33 ns), and SOA limits under unclamped inductive switching.

Technical Context

This MOSFET employs advanced silicon processing to minimize R_DS(on) per unit area while maintaining robust avalanche capability. Its design integrates a low-inductance D2PAK package with internal source/drain inductances of L_S = 7.5 nH and L_D = 4.5 nH, enabling high di/dt operation in hard-switched topologies.

The device supports gate drive voltages from 2.0 V to 4.0 V threshold (V_GS(th)) and delivers 33 S typical transconductance (g_fs). Its C_iss/C_oss/C_rss values (2840 pF / 420 pF / 250 pF at V_DS = 25 V) define switching loss behavior in PWM converters and motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; defines use in ≤48 V DC bus systems.
R_DS(on)	7.5 mΩ max @ V_GS = 10 V, T_J = 25°C - Directly determines conduction loss in high-current paths (e.g., 75 A yields ≤42 W I²R loss).
I_D (cont)	75 A @ T_C = 25°C - Package-limited current rating; derates to ~40 A at T_C = 100°C per linear derating factor of 0.90 W/°C.
Q_g	63–95 nC - Total gate charge defining driver strength requirement; impacts turn-on energy and EMI in high-frequency switching.
t_r/t_f	150 ns / 92 ns - Rise/fall times measured at V_DD = 28 V, I_D = 75 A, R_G = 6.8 Ω; constrains minimum practical switching frequency.
E_AS	94 mJ (tested), 360 mJ (thermally limited) - Single-pulse avalanche energy rating enables robustness in inductive load switching without external snubbers.
V_SD	1.3 V max @ I_S = 75 A - Forward voltage of integrated body diode; critical for synchronous rectification and freewheeling path losses.

Pinout & Package

IRF1010ZSTRLPBF is housed in a surface-mount D2PAK (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides low thermal resistance (R_θJC = 1.11 °C/W) and must be soldered to a PCB copper pour for thermal management.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically connected to heatsink; requires isolation if heatsink is grounded; dominates thermal path to ambient.
Source (Pins 1 & 2)	Reference node for gate drive and current return	Parallel pins reduce bondwire inductance; critical for minimizing V_GS noise during fast switching.
Gate (Pin 3)	Control terminal for channel modulation	High-impedance input requiring low-inductance gate loop; sensitive to ringing due to Q_gd = 24 nC Miller charge.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.5 mΩ enables <1 W conduction loss at 40 A, reducing heatsink size in 48 V battery-powered inverters.
175°C junction rating	Allows full-rated operation at elevated ambient temperatures (e.g., automotive engine compartments or enclosed industrial enclosures).
Repetitive avalanche capability	Rated for repeated unclamped inductive switching up to T_Jmax, eliminating need for external clamping in motor phase-legs.
Fast body diode recovery	t_rr = 22–33 ns and Q_rr = 15–23 nC minimize reverse recovery loss and EMI in half-bridge freewheeling.
Lead-free construction	Meets RoHS Directive 2011/65/EU; compatible with standard Pb-free reflow profiles (peak 260°C, 10 s).

Applications

DC Motor Drive

Switching Power Supply

Use Scenario: Full-bridge control of brushed 24–48 V DC motors in industrial actuators and EV auxiliary systems.

IC Role / Device Role / Timing Role: High-side and low-side switching element; handles bidirectional current up to 75 A with <100 ns dead-time tolerance.

Use Value: Low R_DS(on) reduces I²R heating during stall conditions; avalanche rating withstands back-EMF spikes during abrupt stops.

Use Scenario: Primary-side switch in 500–1000 W LLC resonant and hard-switched forward converters.

IC Role / Device Role / Timing Role: Main power switch operating at 100–300 kHz; driven by isolated gate driver with 12–15 V supply.

Use Value: Low Q_g and fast t_r/t_f enable high-efficiency operation; C_oss = 420 pF ensures predictable ZVS transition timing.

Uninterruptible Power Supply

Battery Management System

Use Scenario: Inverter stage in 1–3 kVA online UPS units converting 48 V DC battery bank to 120/230 V AC output.

IC Role / Device Role / Timing Role: Half-bridge leg switch; subjected to 60 Hz fundamental + high-frequency PWM harmonics and line transients.

Use Value: 175°C T_J rating sustains reliability under sustained overload; E_AS = 360 mJ absorbs surge events without failure.

Use Scenario: Active cell balancing and main discharge FET in 13S–16S Li-ion battery packs for energy storage and e-mobility.

IC Role / Device Role / Timing Role: High-current discharge switch and balancing path controller; operates in linear and saturated modes.

Use Value: Low V_SD = 1.3 V minimizes heat generation during active balancing; robust SOA supports safe linear-mode operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF55	R_DS(on) = 8.5 mΩ, Q_g = 105 nC, TO-220 package	Higher gate charge increases driver loss; through-hole mounting limits board density	Prefer when cost sensitivity outweighs thermal performance and layout compactness.
IXTH75N10L2	R_DS(on) = 9.0 mΩ, 100 V V_DSS, TO-247 package	Higher voltage rating adds margin but increases capacitance (C_iss = 3800 pF), slowing switching	Choose when system overvoltage risk exceeds 55 V or higher creepage is required.

Compared with STP75NF55 and IXTH75N10L2, IRF1010ZSTRLPBF offers the lowest R_DS(on) and best thermal resistance in surface-mount form, making it optimal for space-constrained, high-current 48 V systems where efficiency and thermal headroom are prioritized.

Availability

IRF1010ZSTRLPBF is available at Aetrix Electronics and suitable for DC motor drives, uninterruptible power supplies, and battery management systems requiring stable component supply and long-term production continuity.

Supply support for IRF1010ZSTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial motor control, renewable energy inverters, and server power supplies.

FAQ

What is the maximum allowable case temperature for continuous operation?

The IRF1010ZSTRLPBF supports continuous operation up to T_C = 100°C, beyond which its continuous drain current derates linearly at 0.90 W/°C. At T_C = 100°C, the rated I_D drops to approximately 40 A (per Fig. 9), and thermal design must ensure R_θJA ≤ 40 °C/W for PCB-mounted configurations to avoid exceeding 175°C junction temperature.

Is the body diode suitable for synchronous rectification?

Yes-the integrated body diode has V_SD = 1.3 V max at 75 A and t_rr = 22–33 ns, making it usable in non-critical synchronous rectification roles. However, for high-efficiency designs, an external Schottky or GaN FET is preferred due to lower forward drop and zero reverse recovery charge.

Does IRF1010ZSTRLPBF require gate resistors for stability?

Yes-a series gate resistor (typically 5–22 Ω) is recommended to dampen ringing caused by gate-drain Miller feedback (Q_gd = 24 nC) and parasitic PCB inductance. Values below 5 Ω risk oscillation; above 22 Ω excessively slows switching and increases switching loss.

Can this MOSFET replace IRF1010N in existing designs?

No-IRF1010ZSTRLPBF is not a direct replacement for IRF1010N. While both are 55 V N-channel MOSFETs, the IRF1010N has R_DS(on) = 10.5 mΩ and uses TO-220 packaging. The Z-series offers lower on-resistance and D2PAK packaging, requiring PCB layout revision and thermal validation due to different R_θJC and mounting requirements.

IRF1010ZSTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2840 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1010ZSTRLPBF FAQ

1.How can I place an order for IRF1010ZSTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1010ZSTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1010ZSTRLPBF reliable?

The price and inventory of IRF1010ZSTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1010ZSTRLPBF is usually 5 days.

3.What payment methods are accepted for IRF1010ZSTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1010ZSTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1010ZSTRLPBF?

IRF1010ZSTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1010ZSTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1010ZSTRLPBF?

For technical support, including IRF1010ZSTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1010ZSTRLPBF requirements.

6.How does Aetrix verify that IRF1010ZSTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF1010ZSTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1010ZSTRLPBF meets industry standards.

7.What is the process for return or replacement of IRF1010ZSTRLPBF?

All IRF1010ZSTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1010ZSTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1010ZSTRLPBF part is unused and in its original packaging.

Return procedure for IRF1010ZSTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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