Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1010ZSTRRPBF

Name: IRF1010ZSTRRPBF
Brand: Infineon Technologies
SKU: IRF1010ZSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF1010ZSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1010ZSTRRPBF.pdf

Description:: MOSFET N-CH 55V 75A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,808

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF1010ZSTRRPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for 55 V V_DSS, 7.5 mΩ R_DS(on) at V_GS = 10 V, and 75 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 150 ns, t_f = 92 ns), and rated repetitive avalanche energy up to 94 mJ.

For engineers reviewing the IRF1010ZSTRRPBF datasheet, IRF1010ZSTRRPBF pinout, IRF1010ZSTRRPBF application, or IRF1010ZSTRRPBF equivalent, key selection criteria include its low on-resistance per silicon area, thermally robust 175°C operation, body diode recovery performance (t_rr = 22–33 ns, Q_rr = 15–23 nC), and suitability for high-current DC-DC, motor drive, and UPS output stages.

Technical Context

This device employs advanced trench-gate silicon processing to minimize conduction losses while maintaining rugged unclamped inductive switching capability. Its gate charge profile (Q_g = 63–95 nC, Q_gd = 24 nC) supports efficient hard-switching in synchronous buck and half-bridge topologies operating up to 100 kHz.

The integrated body diode exhibits low forward voltage (V_SD ≤ 1.3 V at 75 A) and controlled reverse recovery, enabling reliable freewheeling in high-di/dt applications. Thermal design is supported by R_θJC = 1.11°C/W and validated transient impedance curves up to 100 ms pulses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V bus systems.
R_DS(on)	7.5 mΩ max @ V_GS = 10 V, T_J = 25°C - Enables <1.5 W conduction loss at 75 A, critical for thermal management in high-current switches.
I_D (cont)	75 A @ T_C = 25°C - Sustained current capability with heatsink; derates to ~45 A at T_C = 100°C per linear derating factor of 0.90 W/°C.
E_AS	94 mJ (tested) - Single-pulse avalanche energy rating confirms robustness against inductive turn-off transients without snubbers.
t_r/t_f	150 ns / 92 ns - Fast edge rates reduce switching losses and EMI generation in PWM-driven power stages.
T_J max	175°C - Allows operation in high-ambient industrial environments with margin for thermal transients.
Q_rr	15–23 nC - Low reverse recovery charge minimizes diode-induced shoot-through risk and associated losses in synchronous rectification.

Pinout & Package

IRF1010ZSTRRPBF is housed in a surface-mount D2PAK (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-current output node	Electrically and thermally connected to PCB copper pour; carries full load current and dissipates heat directly into board.
Source (Pins 1 & 2)	Reference node for gate drive and current return	Parallel pins reduce source inductance (L_S = 7.5 nH); critical for stable gate control during fast switching.
Gate (Pin 3)	Control input for channel modulation	High-impedance terminal requiring <95 nC total charge; Miller plateau at ~4.5 V enables predictable turn-on timing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.5 mΩ enables <1.5 W conduction loss at 75 A, reducing heatsink size and system footprint in high-current DC-DC converters.
175°C junction rating	Supports operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial motor drives) without derating penalties.
Repetitive avalanche capability	Rated for repeated unclamped inductive switching up to T_Jmax, eliminating need for external clamping in relay/snubberless designs.
Fast body diode recovery	t_rr = 22–33 ns and Q_rr = 15–23 nC enable clean freewheeling in synchronous rectifiers and reduce cross-conduction losses.
Lead-free construction	RoHS-compliant D2PAK package meets IPC/JEDEC J-STD-020 reflow profiles and supports automated SMT assembly.

Applications

Motor Drive Inverter Stage

UPS Output Switch

Use Scenario: High-current half-bridge leg driving 3-phase BLDC or PMSM motors in HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: Main switching element handling 75 A peak phase current; operates at 8–20 kHz PWM with precise dead-time control.

Use Value: Low R_DS(on) reduces I²R losses by >30% vs. legacy 10 mΩ MOSFETs, improving efficiency from 94% to 95.8% at full load.

Use Scenario: Bidirectional output switch in online double-conversion UPS systems delivering 3 kVA with zero-transfer-time switchover.

IC Role / Device Role / Timing Role: Inverter-side power switch conducting 75 A RMS; handles both AC line and battery-derived DC bus voltages.

Use Value: 175°C rating ensures reliability during sustained overload conditions (e.g., 120% load for 10 min) without thermal shutdown.

DC-DC Synchronous Buck Converter

Industrial Solid-State Relay

Use Scenario: Primary-side high-side switch in 48 V-to-12 V/100 A telecom power supply with multiphase interleaving.

IC Role / Device Role / Timing Role: High-side MOSFET switching at 100 kHz; gate driven by bootstrap circuit with 10 V logic-level signal.

Use Value: Low Q_gd/Q_g ratio (24/95 nC) minimizes Miller-induced delay, enabling tight duty-cycle control down to 5%.

Use Scenario: Zero-voltage-turn-on solid-state relay replacing electromechanical contactors in PLC I/O modules and factory automation panels.

IC Role / Device Role / Timing Role: Load-switching element controlling 48 V DC solenoids and valves; triggered by 3.3 V microcontroller GPIO.

Use Value: Repetitive avalanche rating allows direct connection to inductive loads without flyback diodes, simplifying BOM and layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF55	55 V V_DSS, 8.5 mΩ R_DS(on), TO-220 package, no avalanche rating specified	Limited to non-inductive or snubber-protected switching; unsuitable for unclamped inductive loads	Prefer when cost-sensitive, lower-current (<60 A) designs allow higher R_DS(on) and through-hole assembly.
IXFH75N30P3	300 V V_DSS, 12.5 mΩ R_DS(on), TO-247 package, 175°C rating, 100 mJ E_AS	Higher voltage headroom but higher conduction loss; requires larger heatsink for same current	Select only if system requires >100 V blocking or legacy TO-247 mechanical compatibility.

Compared with STP75NF55 and IXFH75N30P3, IRF1010ZSTRRPBF delivers optimal balance of low on-resistance, proven avalanche ruggedness, and compact D2PAK thermal performance-making it preferred for space-constrained, high-reliability 48 V industrial power stages.

Availability

IRF1010ZSTRRPBF is available at Aetrix Electronics and suitable for motor drive inverters, UPS output stages, DC-DC synchronous buck converters, and industrial solid-state relays requiring stable component supply and long-term production continuity.

Supply support for IRF1010ZSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial motor drives, renewable energy inverters, and server power supplies where thermal robustness and avalanche tolerance are mandatory.

FAQ

What is the maximum continuous drain current for IRF1010ZSTRRPBF at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 45 A, derived from the linear derating factor of 0.90 W/°C applied to the 95.36 W power dissipation limit at 25°C. This value assumes proper PCB copper area and thermal interface to maintain case temperature.

Does IRF1010ZSTRRPBF require a gate resistor for stability in hard-switching applications?

Yes-a 6.8 Ω gate resistor is recommended per the datasheet switching test condition (RG = 6.8 Ω). This value damps gate oscillation, controls dv/dt during turn-on, and prevents unintended turn-on due to Miller coupling in high-di/dt layouts.

Can IRF1010ZSTRRPBF be used in synchronous rectification without external Schottky diodes?

Yes-the integrated body diode has characterized t_rr = 22–33 ns and Q_rr = 15–23 nC, enabling use in synchronous rectifier topologies up to 100 kHz. However, gate drive must actively commutate the body diode before reverse recovery begins to avoid shoot-through.

Is the D2PAK package of IRF1010ZSTRRPBF compatible with standard reflow soldering profiles?

Yes-it is qualified for lead-free reflow per IPC/JEDEC J-STD-020, with peak temperature up to 260°C for 10 seconds. The package uses matte tin plating and meets MSL Level 1 moisture sensitivity requirements for unlimited floor life.

IRF1010ZSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2840 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1010ZSTRRPBF FAQ

1.How can I place an order for IRF1010ZSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1010ZSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1010ZSTRRPBF reliable?

The price and inventory of IRF1010ZSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1010ZSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRF1010ZSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1010ZSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1010ZSTRRPBF?

IRF1010ZSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1010ZSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1010ZSTRRPBF?

For technical support, including IRF1010ZSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1010ZSTRRPBF requirements.

6.How does Aetrix verify that IRF1010ZSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF1010ZSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1010ZSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRF1010ZSTRRPBF?

All IRF1010ZSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1010ZSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1010ZSTRRPBF part is unused and in its original packaging.

Return procedure for IRF1010ZSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…