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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1018ESLPBF

Name: IRF1018ESLPBF
Brand: Infineon Technologies
SKU: IRF1018ESLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1018ESLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF1018ESLPBF.pdf

Description:: MOSFET N-CH 60V 79A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:4,297

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Product details

Overview

IRF1018ESLPBF from Infineon Technologies (formerly International Rectifier) is a 60 V, 79 A N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 (Straight Lead) package, optimized for high-efficiency synchronous rectification and hard-switched SMPS topologies. It features 7.1 mΩ typical R_DS(on), 46 nC total gate charge, 270 pF output capacitance, and enhanced body diode dV/dt (up to 1.1 V/ns) and dI/dt (up to 1668 A/μs) capability.

For engineers reviewing the IRF1018ESLPBF datasheet, IRF1018ESLPBF pinout, IRF1018ESLPBF application, or IRF1018ESLPBF equivalent, key selection criteria include its avalanche-rated 315 mJ single-pulse energy, 1.32 °C/W junction-to-case thermal resistance, robust 47 A repetitive avalanche current rating, and validated performance in UPS and high-frequency DC-DC converters under 175 °C junction temperature limits.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted body diode design to achieve low conduction loss while maintaining high dynamic ruggedness. Its gate threshold voltage (2.0–4.0 V) and 0.73 Ω internal gate resistance support stable turn-on/turn-off control in high-di/dt environments.

The device is characterized for unclamped inductive switching (UIS) with defined EAS = 315 mJ at T_J = 25 °C, I_AS = 47 A, L = 0.08 mH, and R_G = 25 Ω. Its C_{oss eff.(TR)} = 630 pF and C_{oss eff.(ER)} = 390 pF enable predictable timing and energy behavior during hard-switching transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; enables use in 48 V bus and 36 V automotive auxiliary systems.
R_DS(on) typ.	7.1 mΩ @ V_GS = 10 V, T_J = 25 °C - Delivers ≤ 44 W conduction loss at 79 A, critical for thermal management in compact SMPS designs.
Q_g	46 nC - Gate drive energy requirement determines driver sizing and switching loss trade-off in 100–500 kHz applications.
E_AS	315 mJ - Single-pulse avalanche energy rating supports reliable operation during transient overvoltage events without derating.
trr / Q_rr	26–39 ns / 24–36 nC - Fast, low-charge body diode recovery minimizes shoot-through risk and reverse recovery loss in synchronous rectifiers.
R_θJC	1.32 °C/W - Enables direct heatsink mounting with predictable junction temperature rise; supports > 60 W continuous dissipation at T_C = 100 °C.

Pinout & Package

IRF1018ESLPBF uses the TO-262 (Straight Lead) package - a surface-mount-compatible variant of TO-220AB with gull-wing leads and isolated drain tab. The package provides mechanical robustness and thermal performance comparable to TO-220AB but with improved manufacturability in automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main power current path (high-side or low-side switch node)	Internally connected to metal tab; must be electrically isolated from heatsink unless circuit topology permits common-drain configuration.
Source (S)	Reference node for gate drive and current sensing	Low-inductance return path; used for Kelvin source connection in precision current monitoring or active gate control schemes.
Gate (G)	Control terminal for channel modulation	High-impedance input requiring < 100 nA leakage; sensitive to ESD and requires RC snubbing in high-dV/dt environments.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	Rated for 315 mJ single-pulse and 47 A repetitive avalanche current - eliminates need for external clamping in flyback and LLC resonant converters.
Optimized body diode dV/dt immunity	Validated up to 1.1 V/ns - prevents spurious turn-on during fast voltage transients across drain-source in half-bridge configurations.
Low effective output capacitance	C_{oss eff.(TR)} = 630 pF - reduces turn-off delay and improves zero-voltage switching (ZVS) margin in high-frequency phase-shifted full-bridge designs.
Thermally robust SOA	Linear derating factor 1.2 W/°C above 25 °C case temperature - supports sustained 56 A operation at T_C = 100 °C without pulse limitation.

Applications

UPS Output Stage

Synchronous Rectifier in Telecom PSU

Use Scenario: High-efficiency 48 V DC output stage in line-interactive uninterruptible power supplies handling 1–3 kVA loads.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch replacing Schottky diodes to reduce conduction loss and improve thermal headroom.

Use Value: Achieves > 96% efficiency at full load by cutting forward voltage drop from ~0.5 V to < 0.06 V at 79 A, reducing rectifier losses by > 70%.

Use Scenario: Secondary-side synchronous rectification in 48 V input, 12 V/50 A telecom DC-DC modules operating at 250–300 kHz.

IC Role / Device Role / Timing Role: Main power switch in center-tapped or active-clamp forward topology with precise gate timing synchronized to primary-side controller.

Use Value: Enables ZVS-assisted turn-on via controlled body diode conduction, reducing switching loss by 35% versus standard MOSFETs with slower trr.

Industrial Motor Drive Inverter

Hard-Switched DC-DC Converter

Use Scenario: 3-phase inverter stage in 750 W brushless DC motor drives for HVAC blowers and industrial fans.

IC Role / Device Role / Timing Role: Low-side switching element in 60 V rail system with integrated bootstrap gate drive and overcurrent protection feedback.

Use Value: Withstands 1668 A/μs dI/dt during short-circuit events and maintains safe operation up to 175 °C junction temperature without latch-up.

Use Scenario: Primary-side high-side switch in non-isolated buck-derived DC-DC converters for battery-powered test equipment (24–60 V input).

IC Role / Device Role / Timing Role: Hard-switched power transistor operating at fixed 200 kHz with 50% duty cycle and 47 A peak current pulses.

Use Value: Delivers stable 79 A continuous current with < 1.32 °C/W thermal resistance, enabling passive cooling in space-constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	R_DS(on) = 10.5 mΩ (higher), Q_g = 120 nC (2.6× larger), no published E_AS rating	Lower switching speed; unsuitable for > 200 kHz or avalanche-prone topologies	Prefer when cost sensitivity outweighs efficiency and ruggedness requirements
IXTP75N06T	R_DS(on) = 7.5 mΩ (similar), Q_g = 38 nC (lower), E_AS = 220 mJ (30% lower)	Marginally lower avalanche energy; requires tighter layout control for dV/dt immunity	Prefer when gate drive power budget is constrained and system-level clamping is available

Compared with STP75NF75 and IXTP75N06T, IRF1018ESLPBF offers superior avalanche robustness (315 mJ vs. none or 220 mJ), lower gate charge per ampere, and verified dV/dt immunity-making it the preferred choice for unclamped inductive switching and high-reliability UPS or telecom power stages.

Availability

IRF1018ESLPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply output stages, and hard-switched DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF1018ESLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and industrial MOSFET solutions.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-current, high-ruggedness switching in industrial power conversion, UPS systems, and motor control applications where reliability under transient stress is critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IRF1018ESLPBF supports 56 A continuous drain current at T_C = 100 °C, derived from its linear derating factor of 1.2 W/°C and 110 W maximum power dissipation at 25 °C case temperature. This rating assumes proper heatsinking and ambient airflow consistent with JEDEC JESD51-2 standards.

Does IRF1018ESLPBF have lead-free and RoHS-compliant construction?

Yes - the "PbF" suffix confirms lead-free termination and full compliance with EU RoHS Directive 2011/65/EU and JEDEC JS709B. The device uses matte tin-plated leads and halogen-free molding compound, with no exemptions claimed for lead or other restricted substances.

Can IRF1018ESLPBF replace IRF1018EPbF in existing TO-220AB layouts?

No - IRF1018ESLPBF uses TO-262 (straight-lead) packaging, not TO-220AB. While both share identical die and electrical specs, the TO-262 footprint requires different PCB pad geometry, solder stencil design, and mechanical mounting. Direct replacement is not mechanically feasible without board revision.

What is the recommended gate resistor value for 250 kHz hard-switching operation?

A 10 Ω gate resistor is recommended for 250 kHz operation, balancing switching speed (t_d(on) ≈ 13 ns, t_f ≈ 46 ns) against ringing suppression and driver power dissipation. Lower values (< 5 Ω) increase EMI risk; higher values (> 22 Ω) degrade efficiency due to extended Miller plateau time and increased Q_gd-related losses.

IRF1018ESLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 79A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.4mOhm @ 47A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 69 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2290 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF1018ESLPBF FAQ

1.How can I place an order for IRF1018ESLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1018ESLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1018ESLPBF reliable?

The price and inventory of IRF1018ESLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1018ESLPBF is usually 5 days.

3.What payment methods are accepted for IRF1018ESLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1018ESLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1018ESLPBF?

IRF1018ESLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1018ESLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1018ESLPBF?

For technical support, including IRF1018ESLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1018ESLPBF requirements.

6.How does Aetrix verify that IRF1018ESLPBF is sourced from the original manufacturer or authorized distributors?

All IRF1018ESLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1018ESLPBF meets industry standards.

7.What is the process for return or replacement of IRF1018ESLPBF?

All IRF1018ESLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1018ESLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1018ESLPBF part is unused and in its original packaging.

Return procedure for IRF1018ESLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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