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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1018ESPBF

Name: IRF1018ESPBF
Brand: Infineon Technologies
SKU: IRF1018ESPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1018ESPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1018ESPBF.pdf

Description:: MOSFET N-CH 60V 79A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:8,599

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Product details

Overview

IRF1018ESPBF from Infineon Technologies is a 60V, 79A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-efficiency synchronous rectification and hard-switched SMPS topologies. It features 7.1 mΩ typical R_DS(on), 46 nC total gate charge, 270 pF output capacitance, and enhanced body diode dV/dt (up to 1.3 V/ns) and dI/dt (1668 A/μs) capability.

For engineers reviewing the IRF1018ESPBF datasheet, IRF1018ESPBF pinout, IRF1018ESPBF application, or IRF1018ESPBF equivalent, key selection criteria include avalanche ruggedness (315 mJ single-pulse E_AS), SOA compliance up to 79A at 25°C case temperature, and thermal resistance R_θJC of 1.32 °C/W - critical for high-power DC-DC and UPS designs.

Technical Context

This MOSFET employs planar silicon process with optimized cell layout to deliver improved dynamic dv/dt immunity and fully characterized avalanche safe operating area (SOA). Its low Q_gd/Q_g ratio (12 nC / 46 nC ≈ 0.26) supports fast, controllable switching in high-frequency converters.

The integrated body diode exhibits 26–39 ns reverse recovery time (t_rr) and 24–36 nC reverse recovery charge (Q_rr) at 47A, enabling reliable operation in synchronous rectifier configurations without external Schottky supplementation in many 50–100 kHz designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; suitable for 48V bus and 54V transient clamp applications.
R_DS(on) typ.	7.1 mΩ @ V_GS = 10 V, T_J = 25°C - Enables <1.5 W conduction loss at 47A, reducing heatsink requirements.
I_D continuous	79 A @ T_C = 25°C - Supports high-current primary-side switching in industrial SMPS and UPS inverters.
E_AS	315 mJ - Single-pulse avalanche energy rating; allows unclamped inductive switching without failure under defined conditions.
Q_g	46 nC - Total gate charge determines driver power and switching speed; compatible with standard 1A peak gate drivers.
t_r/t_f	35 ns / 46 ns - Fast edge rates support >200 kHz operation while maintaining EMI control via gate resistor tuning.
C_oss	270 pF - Output capacitance impacts zero-voltage switching (ZVS) design margin and turn-off loss in resonant topologies.

Pinout & Package

IRF1018ESPBF uses the industry-standard TO-220AB package with isolated tab (non-conductive mounting surface), 3-pin through-hole configuration, and 1.32 °C/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal, connected to internal die substrate	Electrically tied to metal tab; requires insulating washer when mounted to heatsink unless tab isolation is confirmed.
Source (S)	Reference node for gate drive and current return path	Low-inductance connection essential for stable gate control; common return for load current and driver ground.
Gate (G)	Control electrode modulating channel conductivity	High-impedance input requiring low-impedance gate driver (<10 Ω series resistance recommended for ringing suppression).

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	315 mJ single-pulse E_AS enables robust operation in unclamped inductive switching without snubbers.
Fast body diode recovery	26–39 ns t_rr and 24–36 nC Q_rr reduce switching losses and cross-conduction risk in synchronous rectifiers.
Low gate charge ratio	Q_gd/Q_g = 0.26 improves Miller immunity and simplifies gate drive design for hard-switched converters.
Thermally optimized package	R_θJC = 1.32 °C/W supports >70W dissipation with moderate heatsinking in TO-220 footprint.
Lead-free and RoHS compliant	"PbF" suffix confirms lead-free plating and full compliance with EU RoHS Directive 2011/65/EU.

Applications

High-Efficiency Synchronous Rectification

Uninterruptible Power Supply (UPS) Inverters

Use Scenario: Secondary-side rectification in 48V-output LLC resonant DC-DC converters for telecom servers.

IC Role / Device Role / Timing Role: Main power switch replacing Schottky diodes to reduce forward voltage drop and conduction loss.

Use Value: Achieves >97% efficiency at full load by cutting rectifier loss by ~40% versus 60V/100A Schottky alternatives.

Use Scenario: Bidirectional DC-AC inverter stage in line-interactive UPS systems with 48V battery bank.

IC Role / Device Role / Timing Role: High-current half-bridge switch handling 79A peak load current during battery backup mode.

Use Value: Sustains 100% rated load for >5 minutes without derating due to 1.32 °C/W R_θJC and SOA-rated 79A operation.

Hard-Switched Forward Converters

High-Frequency SMPS Primary Switches

Use Scenario: Primary-side main switch in 100 kHz forward converter for industrial PLC power supplies.

IC Role / Device Role / Timing Role: PWM-controlled power switch with 35 ns rise time enabling precise duty-cycle control.

Use Value: Minimizes overlap loss during hard switching thanks to low Q_gd and controlled dv/dt (≤1.3 V/ns).

Use Scenario: Primary switch in 250 kHz active-clamp forward converter for medical imaging equipment.

IC Role / Device Role / Timing Role: High-speed, high-current switching element requiring low C_oss (270 pF) for ZVS assist.

Use Value: Enables soft turn-on with <5% voltage overshoot using 100 nH clamp inductor and 46 nC Q_g.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP79NF70	70V V_DSS, 79A I_D, 7.5 mΩ R_DS(on), higher Q_g (65 nC)	Slightly higher conduction loss; less suitable for >200 kHz due to slower switching (t_r = 50 ns)	Prefer where higher breakdown margin (70V vs. 60V) outweighs switching speed penalty.
IXTH79N10L2	100V V_DSS, 79A I_D, 10.5 mΩ R_DS(on), lower Q_gd/Q_g (0.21)	Higher R_DS(on) increases conduction loss; superior dv/dt immunity (2.5 V/ns) for noisy environments	Choose for 100V bus systems or EMI-sensitive applications where ruggedness trumps efficiency.

Compared with STP79NF70 and IXTH79N10L2, IRF1018ESPBF delivers the best balance of low R_DS(on), fast switching, and proven avalanche reliability in 48–60V SMPS - making it optimal for cost-sensitive, high-volume synchronous rectifier designs where thermal headroom and SOA margin are critical.

Availability

IRF1018ESPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply inverters, and hard-switched forward converters requiring stable component supply across multi-year production cycles.

Supply support for IRF1018ESPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-reliability, high-efficiency power conversion in SMPS, motor drives, and UPS systems - emphasizing ruggedness, low loss, and thermal performance in standard packages.

FAQ

Is IRF1018ESPBF suitable for surface-mount assembly?

No. The TO-220AB package is explicitly not recommended for surface-mount applications per Infineon's datasheet note. It requires through-hole mounting with mechanical screw attachment and thermal interface to a heatsink. Surface-mount alternatives like D2PAK (IRF1018ESLPbF) exist but are distinct orderable parts.

What is the maximum allowable gate-to-source voltage for IRF1018ESPBF?

The absolute maximum V_GS rating is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. For reliable long-term use, gate drive should be limited to +10 V to +15 V for turn-on and –5 V to 0 V for turn-off, per Infineon's recommended biasing guidelines.

Does IRF1018ESPBF have a built-in ESD protection diode on the gate?

No. The device lacks integrated gate ESD protection. External gate protection - such as a 12 V Zener clamp between gate and source - is required in systems exposed to handling or system-level ESD events, especially in automated assembly or field-replaceable modules.

Can IRF1018ESPBF replace IRF1010 in existing designs?

Yes, with verification. IRF1018ESPBF offers identical TO-220AB package, lower R_DS(on) (7.1 mΩ vs. 10.5 mΩ), and improved avalanche rating (315 mJ vs. 250 mJ). However, its higher gate charge (46 nC vs. 38 nC) may require gate driver strength review to maintain target switching speed.

IRF1018ESPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 79A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.4mOhm @ 47A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 69 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2290 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1018ESPBF FAQ

1.How can I place an order for IRF1018ESPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1018ESPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1018ESPBF reliable?

The price and inventory of IRF1018ESPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1018ESPBF is usually 5 days.

3.What payment methods are accepted for IRF1018ESPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1018ESPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1018ESPBF?

IRF1018ESPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1018ESPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1018ESPBF?

For technical support, including IRF1018ESPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1018ESPBF requirements.

6.How does Aetrix verify that IRF1018ESPBF is sourced from the original manufacturer or authorized distributors?

All IRF1018ESPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1018ESPBF meets industry standards.

7.What is the process for return or replacement of IRF1018ESPBF?

All IRF1018ESPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1018ESPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1018ESPBF part is unused and in its original packaging.

Return procedure for IRF1018ESPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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