Infineon Technologies IRF1104PBF

Overview

IRF1104PBF from Infineon Technologies (formerly International Rectifier) is a 40 V, 100 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 9 mΩ at V_GS = 10 V and fully rated for repetitive avalanche energy (E_AR = 17 mJ). It delivers fast switching (t_d(off) = 28 ns, t_f = 19 ns), low gate charge (Q_g = 93 nC), and operates up to +175 °C junction temperature - deployed in DC-DC converters, motor drives, and high-current power supplies.

For engineers reviewing the IRF1104PBF datasheet, IRF1104PBF pinout, IRF1104PBF application, or IRF1104PBF equivalent, key selection criteria include its 40 V V_DSS, 9 mΩ on-resistance at 10 V gate drive, TO-220AB thermal resistance (R_θJC = 0.90 °C/W), avalanche ruggedness, and body diode recovery characteristics (t_rr = 74–110 ns).

Technical Context

This HEXFET device uses fifth-generation silicon processing to minimize conduction loss while maintaining robust unclamped inductive switching capability. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) enables reliable turn-on with standard logic-level drivers, and its dynamic dv/dt rating of 5.0 V/ns supports stable operation in noisy high-speed switching environments.

The integrated body diode exhibits V_SD = 1.3 V at I_S = 60 A and T_J = 25 °C, with reverse recovery charge Q_rr = 188–280 nC and trr = 74–110 ns under di/dt = 100 A/µs - critical for synchronous rectification and freewheeling path design in buck and half-bridge topologies.

Key Specifications

Pinout & Package

IRF1104PBF is housed in a TO-220AB package with exposed drain tab (pins 2 and 4 electrically connected), optimized for vertical heat transfer and mechanical mounting via M3/6-32 screw (1.1 N·m torque). The package meets JEDEC TO-220AB outline standards and supports lead-free reflow soldering (300 °C for 10 s).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N4F6 and IXTH110N40L2, IRF1104PBF offers optimal balance of 40 V rating, 9 mΩ on-resistance, 170 W power dissipation, and proven avalanche ruggedness - making it preferred for high-current, thermally constrained 12–48 V industrial power stages where reliability under transient stress is critical.

Availability

IRF1104PBF is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, DC-DC converters, and automotive starter control systems requiring stable component supply across long production lifecycles.

Supply support for IRF1104PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with strong heritage in power discrete innovation.

The IRF1104PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control applications demanding rugged avalanche performance and low conduction loss.

FAQ

What is the maximum safe operating area (SOA) limitation for IRF1104PBF at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is limited to approximately 52 A due to thermal derating (1.11 W/°C × (100 − 25) = 83.25 W loss budget; I = √(P/R_DS(on)) ≈ √(83.25/0.009) ≈ 96 A, but package current rating caps at 52 A per Fig. 9). Pulse operation extends this based on SOA curves in Fig. 8.

Can IRF1104PBF be driven directly by a 3.3 V microcontroller GPIO?

No - its gate threshold voltage range is 2.0–4.0 V, but full enhancement requires ≥10 V to achieve R_DS(on) = 9 mΩ. At 3.3 V, R_DS(on) exceeds 50 mΩ, causing excessive conduction loss. A gate driver (e.g., TC4427) or level-shifting circuit is mandatory for reliable switching.

Is the TO-220AB package electrically insulated, and how should the drain tab be mounted?

The TO-220AB drain tab is electrically connected to pins 2 and 4 and is not insulated. When mounting to a heatsink, electrical isolation (e.g., mica washer + thermal grease or silicone pad) is required unless the heatsink is referenced to the drain potential. Mounting torque must not exceed 1.1 N·m to avoid package cracking.

Does IRF1104PBF support paralleling for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (see Fig. 4) ensures inherent current sharing when paralleled. However, layout symmetry (matched gate and source inductance), individual gate resistors (≥5 Ω), and thermal coupling are essential to prevent current imbalance and localized overheating.