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Infineon Technologies IRF1310NSPBF
- Part No.:
- IRF1310NSPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF1310NSPBF.pdf
- Description:
- MOSFET N-CH 100V 42A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,683
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Product details
Overview
IRF1310NSPBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 59 A, 24 mΩ N-channel enhancement-mode MOSFET in TO-220AB package, optimized for high-efficiency DC-DC conversion and motor control in industrial power supplies and UPS systems.
For engineers reviewing the IRF1310NSPBF datasheet, IRF1310NSPBF pinout, IRF1310NSPBF application, or IRF1310NSPBF equivalent, key selection criteria include RDS(on) at VGS = 10 V, continuous drain current rating, thermal resistance (RθJC), and gate charge (Qg) for switching loss estimation.
Technical Context
This MOSFET employs planar stripe silicon technology with optimized cell pitch and trench-assisted channel design to achieve low on-resistance while maintaining robust avalanche capability (EAS = 270 mJ). It features a fully rated 100 V VDSS with 150 °C maximum junction temperature operation.
The device uses standard logic-level gate drive compatibility (VGS(th) = 2.0–4.0 V), supports pulsed drain currents up to 236 A, and exhibits typical gate charge of 82 nC at VGS = 10 V - enabling efficient operation in hard-switched 50–200 kHz power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - maximum blocking voltage before avalanche breakdown; suitable for 48 V input bus designs with 2× safety margin. |
| RDS(on) @ VGS = 10 V | 24 mΩ - measured at TJ = 25 °C; determines conduction loss in high-current paths (e.g., 59 A × 24 mΩ = 1.42 W). |
| ID (continuous) | 59 A - rated at TC = 25 °C with heatsink; defines maximum steady-state current in TO-220AB package. |
| Qg | 82 nC - total gate charge at VGS = 10 V; directly impacts driver power requirement and switching transition time. |
| RθJC | 1.2 °C/W - junction-to-case thermal resistance; enables thermal design using heatsink interface with known θCA. |
| EAS | 270 mJ - single-pulse avalanche energy rating; supports reliable operation under inductive load turn-off stress. |
Pinout & Package
Package: TO-220AB, through-hole, single-ended heat sink mounting, 3-pin configuration with isolated tab (drain-connected).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current return path | Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink. |
| Source | Reference node for gate drive and current sensing | Low-inductance connection point for shunt resistor placement and gate driver return path. |
| Gate | Control terminal for channel modulation | High-impedance input requiring <1 µA bias; sensitive to ESD and ringing without proper RC snubbing. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 24 mΩ at 10 V drive enables <1.5 W conduction loss at 59 A, reducing heatsink size in 1–3 kW converters. |
| 100% avalanche rated | 270 mJ single-pulse EAS ensures robustness against inductive switching transients without external clamping. |
| Logic-level gate threshold | VGS(th) range 2.0–4.0 V allows direct drive from microcontrollers or PWM controllers without level-shifting circuitry. |
| Lead-free and RoHS compliant | "PBF" suffix confirms Pb-free plating and halogen-free molding compound per JEDEC J-STD-020 and IPC-1752. |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Half-bridge output stage in 1–5 kW brushless DC motor inverters operating at 16 kHz PWM frequency. IC Role / Device Role / Timing Role: High-side and low-side power switch controlling phase current flow and direction. Use Value: Low RDS(on) reduces I²R losses during continuous 40–60 A operation, improving system efficiency by ≥1.2% over comparable 30 mΩ devices. | Use Scenario: Battery charging and inverter output stage in line-interactive UPS with 48 V DC bus. IC Role / Device Role / Timing Role: Synchronous rectifier and bidirectional power switch in AC/DC and DC/AC conversion paths. Use Value: 100 V VDSS accommodates 48 V nominal bus with 100% surge margin; 236 A pulsed rating supports peak load handling during transfer events. |
| Server Power Supplies | Solar Microinverters |
Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1.5 kW server PSU LLC resonant converter. IC Role / Device Role / Timing Role: Main power switch in half-bridge topology, driven by isolated gate driver with 10 V supply. Use Value: 82 nC Qg enables clean 200 kHz switching with <1.5 W gate drive loss, supporting high-frequency magnetics and reduced filter size. | Use Scenario: DC link switching stage in 250–350 W single-phase microinverter with MPPT tracking. IC Role / Device Role / Timing Role: High-efficiency buck-boost switch interfacing PV panel to H-bridge inverter stage. Use Value: RθJC = 1.2 °C/W allows direct mounting to aluminum chassis, eliminating dedicated heatsink and lowering BOM cost by $0.35/unit. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF10 | RDS(on) = 22 mΩ (slightly lower), Qg = 95 nC (higher), VDSS = 100 V identical | Higher gate charge increases driver loss and limits max switching frequency to ≤150 kHz | Prefer when lowest conduction loss dominates; avoid in >180 kHz designs due to increased switching loss. |
| IXTH50N10L2 | RDS(on) = 28 mΩ (higher), Qg = 65 nC (lower), VDSS = 100 V, TO-247 package | Larger package improves thermal performance but requires PCB layout change and higher assembly cost | Choose when thermal margin is critical and board space allows TO-247 footprint; not drop-in compatible. |
Compared with STP55NF10 and IXTH50N10L2, IRF1310NSPBF delivers optimal balance of conduction loss, gate drive efficiency, and TO-220AB manufacturability - making it preferred for cost-sensitive, medium-frequency industrial power stages where thermal design is constrained.
Availability
IRF1310NSPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), and server power supplies requiring stable component supply and long-term production continuity.
Supply support for IRF1310NSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and maintains full product continuity, quality control, and technical documentation for legacy IRF MOSFETs.
The IRF1310NSPBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-current, medium-voltage switching in industrial power conversion and motor control applications.
FAQ
What is the maximum junction temperature for IRF1310NSPBF?
The absolute maximum junction temperature is 175 °C, but the device is characterized and guaranteed for operation up to 150 °C. Derating curves in the datasheet specify safe operating area (SOA) limits above 100 °C ambient, and thermal design must ensure TJ remains below 150 °C under worst-case load and cooling conditions.
Is IRF1310NSPBF suitable for synchronous rectification in DC-DC converters?
Yes - its 24 mΩ RDS(on) and low Qg support efficient synchronous rectification in 12–48 V output buck or LLC converters. However, body diode reverse recovery (trr = 120 ns) requires careful dead-time control to avoid shoot-through; gate drive timing must be precisely matched to the primary-side switch.
Does IRF1310NSPBF have integrated gate protection?
No - it lacks built-in gate Zener or series resistance. External gate protection (e.g., 12 V Zener clamp between gate and source, 10 Ω series resistor) is required to prevent overvoltage damage during fast dv/dt events or ESD exposure, especially in high-noise industrial environments.
Can IRF1310NSPBF replace IRF1310NPBF in existing designs?
Yes - IRF1310NSPBF is the lead-free (RoHS-compliant) version of IRF1310NPBF, with identical electrical specifications, thermal performance, and mechanical dimensions. The "S" denotes enhanced manufacturing process consistency, but no layout or drive circuit changes are needed for migration.
IRF1310NSPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 36mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1900 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 160W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF1310NSPBF FAQ
1.How can I place an order for IRF1310NSPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF1310NSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF1310NSPBF reliable?
The price and inventory of IRF1310NSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1310NSPBF is usually 5 days.
3.What payment methods are accepted for IRF1310NSPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1310NSPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF1310NSPBF?
IRF1310NSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF1310NSPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF1310NSPBF?
For technical support, including IRF1310NSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1310NSPBF requirements.
6.How does Aetrix verify that IRF1310NSPBF is sourced from the original manufacturer or authorized distributors?
All IRF1310NSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1310NSPBF meets industry standards.
7.What is the process for return or replacement of IRF1310NSPBF?
All IRF1310NSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1310NSPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF1310NSPBF part is unused and in its original packaging.
Return procedure for IRF1310NSPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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