Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1310NSTRRPBF

Name: IRF1310NSTRRPBF
Brand: Infineon Technologies
SKU: IRF1310NSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF1310NSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1310NSTRRPBF.pdf

Description:: MOSFET N-CH 100V 42A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,344

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF1310NSTRRPBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 59 A, 40 mΩ N-channel enhancement-mode MOSFET in TO-263 (D²PAK) package, optimized for high-efficiency DC-DC converters and motor control stages requiring low conduction loss and fast switching.

For engineers reviewing the IRF1310NSTRRPBF datasheet, IRF1310NSTRRPBF pinout, IRF1310NSTRRPBF application, or IRF1310NSTRRPBF equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g for gate driver sizing, SOA limits under repetitive pulse conditions, and thermal resistance (R_θJC) for heatsink design in industrial power supplies.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized cell pitch to balance on-resistance and switching charge. It features a fully rated avalanche energy rating (E_AS = 370 mJ) and specified short-circuit withstand time (t_SC = 10 µs at V_DD = 60 V, T_J = 25 °C).

The device supports standard gate drive voltages (10 V), has a threshold voltage (V_GS(th)) of 2.0–4.0 V, and exhibits a body diode reverse recovery charge (Q_rr) of 120 nC - critical for synchronous rectification and hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum drain-source blocking voltage for 48 V bus systems with 2× safety margin
I_D (continuous)	59 A @ T_C = 25 °C - usable current in forced-air cooled PCB mount with heatsink
R_DS(on)	40 mΩ @ V_GS = 10 V - conduction loss of 140 W at 60 A, dictating thermal design
Q_g	85 nC - determines gate driver peak current requirement (~1.7 A for 50 ns rise time)
E_AS	370 mJ - enables reliable operation under inductive load turn-off without external snubber
R_θJC	0.55 °C/W - junction-to-case thermal resistance for direct heatsink mounting

Pinout & Package

Package: TO-263 (D²PAK), surface-mount, isolated tab (drain-connected), 3-pin configuration with exposed copper pad for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to power ground or low-side return path
Pin 2 (Gate)	Control input	Receives 10 V logic-level signal; requires <100 Ω series resistance to damp ringing
Pin 3 (Drain)	High-side switch node	Connected to load/inductor; electrically tied to exposed metal tab for thermal path

Key Features

Feature	Design Value
100% UIS tested	Guarantees ruggedness against unclamped inductive switching events in motor drives
Lead-free (PbF) construction	Complies with RoHS Directive 2011/65/EU; no lead contamination in solder reflow profile
Fast body diode	t_rr = 65 ns - reduces reverse recovery loss in buck converter freewheeling phase
Enhancement-mode only	V_GS(th) > 2 V ensures default-OFF behavior - eliminates need for pull-down resistors

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: 3-phase inverter stage in 1–3 kW HVAC compressors operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-side switching element handling continuous 45 A RMS current with 100 V DC bus.

Use Value: 40 mΩ R_DS(on) minimizes I²R loss; 370 mJ E_AS prevents failure during sudden load disconnection.

Use Scenario: Primary-side switching transistor in 80 PLUS Titanium-certified 1.5 kW server power supply.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in forward converter topology with 100 V clamp.

Use Value: 0.55 °C/W R_θJC enables compact heatsink design; 85 nC Q_g supports efficient 200 kHz operation.

Solar Microinverter H-Bridge

EV Onboard Charger Stage

Use Scenario: Full-bridge output stage in 300–500 W photovoltaic microinverter converting 40–60 V DC to 230 V AC.

IC Role / Device Role / Timing Role: High-frequency (30–50 kHz) bridge leg switch with bidirectional current capability.

Use Value: Fast body diode (t_rr = 65 ns) reduces cross-conduction loss; 100 V rating accommodates PV string transients.

Use Scenario: Isolated DC-DC stage in 6.6 kW EV onboard charger converting 400 V battery to 14 V auxiliary rail.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology.

Use Value: Specified t_SC = 10 µs ensures fault containment during short-circuit events in automotive environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	R_DS(on) = 11 mΩ (lower), Q_g = 105 nC (higher), TO-220FP package	Higher current density but larger footprint; higher gate charge increases driver loss	Prefer when lower conduction loss dominates over switching loss and board space allows TO-220FP
IXTP110N10L2	R_DS(on) = 12.5 mΩ, logic-level V_GS(th) = 1–2.5 V, TO-220 package	Enables 5 V gate drive but lacks specified E_AS and t_SC ratings	Select only where gate drive voltage is constrained to 5 V and avalanche stress is absent

Compared with STP110N10F7 and IXTP110N10L2, the IRF1310NSTRRPBF offers balanced R_DS(on)/Q_g, industry-standard TO-263 thermal performance, and fully characterized ruggedness - making it optimal for industrial-grade designs requiring verified fault tolerance.

Availability

IRF1310NSTRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV onboard charger stages requiring stable component supply and long-term manufacturability.

Supply support for IRF1310NSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with legacy expertise from International Rectifier's power MOSFET portfolio.

The StrongIRFET™ product line delivers high-current, high-voltage discrete power MOSFETs engineered for efficiency-critical industrial and renewable energy systems where reliability under repetitive stress is mandatory.

FAQ

What is the maximum pulsed drain current (I_DM) for IRF1310NSTRRPBF?

The absolute maximum pulsed drain current is 236 A, defined at T_C = 25 °C with duty cycle ≤ 1% and pulse width ≤ 10 µs. This rating applies only under strictly controlled thermal conditions and must be derated linearly above 25 °C case temperature per the datasheet's I_DM vs. T_C curve.

Does IRF1310NSTRRPBF support gate drive at 5 V?

No - the device is not guaranteed to fully enhance at 5 V. Its V_GS(th) range is 2.0–4.0 V, but R_DS(on) is specified only at V_GS = 10 V. At 5 V, typical R_DS(on) exceeds 120 mΩ, increasing conduction loss significantly and risking thermal runaway under load.

Is the exposed drain tab electrically isolated in TO-263 package?

No - the exposed copper pad on the underside of the TO-263 package is internally connected to the drain terminal. Any heatsink or PCB copper area contacting this pad must be electrically isolated from other circuit potentials unless intentionally tied to drain potential.

What is the recommended minimum solder mask opening for the drain pad?

A minimum solder mask opening of 10.0 × 10.0 mm is recommended to ensure full thermal contact between the exposed drain pad and the PCB copper pour. The pad should be thermally relieved with ≥4 thermal spokes (0.3 mm wide, 2.5 mm long) to prevent solder voiding during reflow while maintaining mechanical stability.

IRF1310NSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 36mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 160W (Tc)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1310NSTRRPBF FAQ

1.How can I place an order for IRF1310NSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1310NSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1310NSTRRPBF reliable?

The price and inventory of IRF1310NSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1310NSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRF1310NSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1310NSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1310NSTRRPBF?

IRF1310NSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1310NSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1310NSTRRPBF?

For technical support, including IRF1310NSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1310NSTRRPBF requirements.

6.How does Aetrix verify that IRF1310NSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF1310NSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1310NSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRF1310NSTRRPBF?

All IRF1310NSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1310NSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1310NSTRRPBF part is unused and in its original packaging.

Return procedure for IRF1310NSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…