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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1312PBF

Name: IRF1312PBF
Brand: Infineon Technologies
SKU: IRF1312PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1312PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF1312PBF.pdf

Description:: MOSFET N-CH 80V 95A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1312PBF from Infineon Technologies is a 80V, 95A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, featuring 6.6 mΩ typical R_DS(on) at V_GS = 10V, 140 nC total gate charge, and 250 mJ single-pulse avalanche energy - deployed in high-frequency DC-DC converters and motor control stages.

For engineers reviewing the IRF1312PBF datasheet, IRF1312PBF pinout, IRF1312PBF application, or IRF1312PBF equivalent, key selection criteria include its low 0.75°C/W junction-to-case thermal resistance, fully characterized C_oss,eff (620 pF), and body diode reverse recovery charge (Q_rr = 150–230 nC) for hard-switched topologies.

Technical Context

This MOSFET employs planar silicon process with optimized cell layout to achieve low conduction loss and robust unclamped inductive switching capability. Its gate threshold voltage (3.5–5.5 V) and forward transconductance (92 S) support stable operation across -55°C to +175°C junction temperature range.

The device integrates a fast-recovery body diode (t_rr = 64–96 ns, Q_rr = 150–230 nC) and exhibits linear SOA up to 100 µs pulse width at T_C = 25°C. Effective output capacitance (C_oss,eff = 620 pF) is specified over full V_DS sweep (0–64 V), enabling accurate snubber and resonant circuit design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	80 V - maximum blocking voltage before avalanche onset; supports 48V bus systems with 20% derating margin
R_DS(on) max	10 mΩ - worst-case on-resistance at V_GS = 10V, ID = 57A, TJ = 125°C; defines conduction loss in continuous mode
I_D @ T_C = 25°C	95 A - continuous drain current limited by package thermal capacity, not silicon area
Q_g max	140 nC - total gate charge determining driver power and switching transition time in hard-switched converters
E_AS	250 mJ - single-pulse avalanche energy rating; enables reliable operation under inductive turn-off stress without external clamping
C_oss,eff	620 pF - effective output capacitance from V_DS = 0V to 64V; used directly in ZVS timing and soft-switching loss calculation
t_rr	64–96 ns - body diode reverse recovery time at IF = 57A, di/dt = 100 A/µs; impacts commutation loss and EMI in synchronous rectification

Pinout & Package

IRF1312PBF uses TO-220AB package with standard three-terminal configuration: Drain connected to tab (electrically active), Source and Gate on leads. Mounting torque: 10 lbf·in (1.1 N·m).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to metal tab	Must be isolated from heatsink unless system ground reference permits; contributes to thermal path via case-to-sink interface
Source	Reference node for gate drive and current return path	Low-inductance connection critical for gate loop stability; ties to power ground plane in high-di/dt applications
Gate	Control electrode modulating channel conductivity	High-impedance input requiring low-impedance driver (< 4.5 Ω recommended) to minimize switching losses

Key Features

Feature	Design Value
Lead-free construction	RoHS-compliant packaging with matte tin plating; eliminates Pb-based solder compatibility concerns in modern assembly lines
Low Q_gd/Q_g ratio	34/140 nC - Miller charge fraction < 25%, reducing susceptibility to dv/dt-induced false turn-on in bridge configurations
Fully characterized C_oss	Specified at V_DS = 1.0V (1910 pF), 25V (550 pF), and 64V (380 pF); enables precise modeling of capacitive turn-off loss
Avalanche-rated	Rated for repetitive (E_AR = 21 mJ) and single-pulse (E_AS = 250 mJ) avalanche; removes need for external RCD clamp in many flyback designs
Thermal performance	R_θJC = 0.75°C/W - enables 210 W power dissipation at T_C = 25°C; supports compact heatsink sizing in space-constrained converters

Applications

High-Frequency DC-DC Converters

Motor Control Stages

Use Scenario: Primary-side switch in 100–500 kHz isolated forward or half-bridge converters powering telecom or server PSUs.

IC Role / Device Role / Timing Role: Main power switch handling 95A peak currents with minimal conduction and switching loss.

Use Value: Low R_DS(on) (6.6 mΩ typ.) and C_oss,eff (620 pF) reduce both I²R and ½CV² losses, improving efficiency above 94% at full load.

Use Scenario: High-side or low-side switch in 3-phase BLDC inverter stages for industrial pumps and HVAC fans.

IC Role / Device Role / Timing Role: Phase-leg switching element operating with 10–20 kHz PWM, subject to shoot-through and inductive flyback stress.

Use Value: Avalanche rating (250 mJ E_AS) and fast body diode (t_rr = 64 ns) tolerate commutation errors and enable sensorless FOC without external freewheeling diodes.

Uninterruptible Power Supplies

Industrial UPS Inverters

Use Scenario: Output H-bridge stage in line-interactive UPS delivering clean 50/60 Hz sine wave during battery backup.

IC Role / Device Role / Timing Role: Bidirectional switching device conducting 95A RMS during overload conditions with low thermal impedance.

Use Value: R_θJC = 0.75°C/W and 175°C max T_J allow sustained operation at 125°C case temperature without derating in sealed enclosures.

Use Scenario: DC-link switching in 3-phase 400V industrial UPS inverters with active PFC front-end.

IC Role / Device Role / Timing Role: High-current, high-voltage switching node managing bidirectional energy flow between battery bank and AC grid.

Use Value: V_DSS = 80V provides 20% margin over 48V nominal DC-link, while low Q_g (140 nC) ensures gate driver compatibility with standard 2A peak drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP90NF03L	R_DS(on) = 3.3 mΩ @ 10V (lower), V_DSS = 30V (lower), Q_g = 110 nC (lower)	Not suitable for 48V+ bus systems due to 30V rating; better for 12V automotive loads	Select only if V_DS stress remains below 24V and lower gate drive loss is prioritized
IXTH90N10L2	V_DSS = 100V (higher), R_DS(on) = 11.5 mΩ @ 10V (higher), Q_g = 125 nC (lower)	Higher voltage margin supports 72V battery systems but increases conduction loss at 48V	Prefer when system requires >80V blocking capability and can accept 15% higher I²R loss

Compared with STP90NF03L and IXTH90N10L2, IRF1312PBF delivers optimal balance of 80V rating, 10 mΩ R_DS(on), and 140 nC Q_g for 48V industrial DC-DC and motor drives where voltage margin, thermal density, and avalanche ruggedness are jointly critical.

Availability

IRF1312PBF is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, motor control stages, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF1312PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF HEXFET® product line targets high-efficiency power conversion systems, emphasizing low R_DS(on), robust avalanche capability, and thermally optimized packages for demanding industrial and computing applications.

FAQ

What is the maximum continuous drain current for IRF1312PBF at 100°C case temperature?

The maximum continuous drain current is 67 A at T_C = 100°C and V_GS = 10V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel mobility and increased R_DS(on) at elevated temperatures, not package current limitation.

Does IRF1312PBF have a fully rated avalanche capability for repetitive operation?

Yes - it is rated for repetitive avalanche energy (E_AR) of 21 mJ per pulse at T_J = 25°C, with defined test conditions (I_AR = 57 A, V_DD = 40 V). This allows safe operation in circuits with unclamped inductive switching, such as relay drivers or solenoid controls, without external protection.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

The integrated body diode has V_SD = 1.3 V at 57 A and t_rr = 64–96 ns, making it slower and higher-loss than most Schottky diodes. It is suitable for low-frequency freewheeling but not recommended as primary rectifier above 100 kHz; external SiC Schottky diodes are preferred for high-efficiency synchronous designs.

Can IRF1312PBF be mounted directly to a heatsink without electrical isolation?

No - the Drain is internally connected to the metal tab, which is electrically active. Direct mounting requires either an isolated heatsink or use of insulating thermal pads/washers. Failure to isolate may cause short circuits in grounded-source configurations or violate safety creepage requirements.

IRF1312PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 95A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 57A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 210W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF1312PBF FAQ

1.How can I place an order for IRF1312PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1312PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1312PBF reliable?

The price and inventory of IRF1312PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1312PBF is usually 5 days.

3.What payment methods are accepted for IRF1312PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1312PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1312PBF?

IRF1312PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1312PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1312PBF?

For technical support, including IRF1312PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1312PBF requirements.

6.How does Aetrix verify that IRF1312PBF is sourced from the original manufacturer or authorized distributors?

All IRF1312PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1312PBF meets industry standards.

7.What is the process for return or replacement of IRF1312PBF?

All IRF1312PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1312PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1312PBF part is unused and in its original packaging.

Return procedure for IRF1312PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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