Infineon Technologies IRF1324LPBF

Overview

IRF1324LPBF from Infineon Technologies is a 24 V, 1.3 mΩ typ., 340 A silicon-limited N-channel HEXFET Power MOSFET in D²Pak (TO-262) package, optimized for high-current synchronous rectification and hard-switched SMPS topologies where low conduction loss and robust avalanche capability are critical.

For engineers reviewing the IRF1324LPBF datasheet, IRF1324LPBF pinout, IRF1324LPBF application, or IRF1324LPBF equivalent, key selection criteria include its 1.3 mΩ R_DS(on) at V_GS = 10 V, 195 A package-limited continuous current, 1420 A pulsed diode current, 1.3 V body diode forward voltage, and 46 ns reverse recovery time at T_J = 25 °C.

Technical Context

This device employs planar stripe silicon technology with enhanced body diode dV/dt and dI/dt capability, enabling reliable operation in high-frequency, high-di/dt synchronous rectifier circuits. Its fully characterized SOA includes thermally limited single-pulse avalanche energy of 1420 mJ at I_AS = 195 A.

The gate charge profile shows Q_g = 160–240 nC with Q_gd = 49 nC, supporting fast switching while maintaining Miller immunity. C_{oss eff}(TR) = 4490 pF and C_{oss eff}(ER) = 4700 pF reflect optimized output capacitance for both timing and energy trade-offs in resonant and hard-switched converters.

Key Specifications

Pinout & Package

D²Pak (TO-262) package with exposed drain pad for low thermal resistance (R_θJC = 0.50 °C/W); standard 3-pin outline with GDS pin assignment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Compared with IRF1324SPBF, the IRF1324LPBF delivers 5.5× lower junction-to-ambient thermal resistance and 2.3× higher pulsed diode current, making it uniquely suited for high-reliability UPS and welding inverters; versus STL220N4L10AG, it trades 0.35 mΩ lower R_DS(on) for 2× higher avalanche energy, prioritizing fault tolerance over peak efficiency.

Availability

IRF1324LPBF is available at Aetrix Electronics and suitable for high-efficiency server VRMs, industrial UPS output stages, and hard-switched telecom rectifiers requiring stable component supply across multi-year production cycles.

Supply support for IRF1324LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line targets high-current, high-reliability power conversion systems including server PSUs, UPS, welding equipment, and industrial motor drives, emphasizing ruggedness, low R_DS(on), and fully characterized SOA.

FAQ

What is the maximum continuous drain current for IRF1324LPBF at 100 °C case temperature?

The maximum continuous drain current at T_C = 100 °C is 240 A, derived from silicon-limited ID rating derated using the linear derating factor of 0.46 W/°C and R_θJC = 0.50 °C/W. This value reflects thermal equilibrium under forced-air cooling with adequate heatsinking and accounts for bond-wire current limits at elevated temperatures.

Does IRF1324LPBF support logic-level gate drive?

No - IRF1324LPBF has a gate threshold voltage range of 2.0–4.0 V but is specified for full enhancement at V_GS = 10 V. Its R_DS(on) is guaranteed only at 10 V, and drive below 8 V results in significantly higher on-resistance and thermal instability; a dedicated 10–12 V gate driver is required for rated performance.

How does the body diode performance compare to standard Schottky rectifiers?

The body diode exhibits V_SD ≤ 1.3 V at 195 A and trr = 46 ns, offering lower forward drop than 1.5 V Schottkys at high current but slower recovery than ultrafast Schottkys (<20 ns). It is optimized for synchronous rectification where gate-controlled conduction dominates, not as a standalone diode replacement.

Is IRF1324LPBF suitable for paralleling multiple devices?

Yes - its positive temperature coefficient of R_DS(on) (see Fig. 4) ensures inherent current sharing stability. Successful paralleling requires matched gate drive loop inductance, symmetrical PCB layout, and individual gate resistors (≥2.7 Ω) to dampen oscillation; thermal coupling between devices must be minimized to avoid thermal runaway.