Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1324S-7PPBF

Name: IRF1324S-7PPBF
Brand: Infineon Technologies
SKU: IRF1324S-7PPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF1324S-7PPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Datasheet:: IRF1324S-7PPBF.pdf

Description:: MOSFET N-CH 24V 240A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,136

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF1324S-7PPBF from Infineon is a 24V, 0.8mΩ typ. N-channel D2Pak-7 power MOSFET optimized for high-current synchronous rectification in SMPS and UPS systems. It delivers 240A package-limited continuous drain current at 25°C, features 1.3V body diode forward voltage at 160A, and supports hard-switched operation up to 175°C junction temperature.

For engineers reviewing the IRF1324S-7PPBF datasheet, IRF1324S-7PPBF pinout, IRF1324S-7PPBF application, or IRF1324S-7PPBF equivalent, key selection criteria include R_DS(on) ≤1.0mΩ max at 10V V_GS, 230mJ single-pulse avalanche energy, 1640A pulsed drain current, and D2Pak-7 thermal performance with R_θJC = 0.50°C/W.

Technical Context

This HEXFET® device uses trench-gate silicon technology to achieve ultra-low on-resistance while maintaining robust avalanche capability. Its 7-pin D2Pak layout separates high-current source terminals (pins 1–3) from gate and drain connections to reduce parasitic inductance and improve switching stability in high-dI/dt applications.

The MOSFET is characterized for dynamic dV/dt ruggedness up to 1.6V/ns during diode recovery and features fully specified C_iss (7700pF), C_oss (3380pF), and Q_g (180nC typ.) to enable precise gate drive design in >100kHz hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	24V - Maximum blocking voltage compatible with 12V/24V bus architectures and synchronous buck outputs.
R_DS(on) max	1.0mΩ @ V_GS = 10V, I_D = 160A - Enables <1W conduction loss at 200A, critical for high-efficiency SMPS.
I_D (package)	240A @ T_C = 25°C - Determined by leadframe thermal limits, not silicon; requires low-impedance PCB copper pour.
E_AS	230mJ - Single-pulse avalanche energy rating validated at T_J = 25°C, L = 18µH, enabling unclamped inductive switching safety margin.
Q_g	180nC typ. - Gate charge value used to calculate required peak gate drive current for 100ns turn-on in high-frequency designs.
V_SD	1.3V @ I_S = 160A, T_J = 25°C - Low body diode forward voltage reduces reverse conduction losses in synchronous rectifier mode.
trr	71ns typ. @ T_J = 25°C - Fast reverse recovery time minimizes switching loss and EMI in high-frequency hard-switched converters.

Pinout & Package

D2Pak-7 (TO-263-7) package with isolated source terminals (pins 1–3), dedicated gate (pin 4), and high-current drain (pins 5–7). Designed for surface-mount assembly with exposed drain pad for thermal transfer to PCB heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3 (Source)	Low-side return path	Three parallel source pins reduce bond-wire resistance and inductance; must be connected to common low-impedance ground plane.
4 (Gate)	Control input	Single gate terminal with 3.0Ω typical gate resistance; requires low-inductance gate loop to minimize ringing during 160A switching.
5,6,7 (Drain)	High-current output node	Three-drain configuration connects directly to internal die drain metallization; soldered to large copper area for thermal dissipation.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	1.6V/ns peak diode recovery rating ensures reliable operation under fast voltage transients without false turn-on.
Fully characterized SOA	Maximum Safe Operating Area defined up to 10ms pulses and 175°C, enabling accurate thermal design in overload conditions.
Lead-free construction	RoHS-compliant finish with SnAgCu plating; qualified per JEDEC J-STD-020 moisture sensitivity level 3.
Improved avalanche ruggedness	230mJ single-pulse energy rating verified per JEDEC JESD24-11, supporting unclamped inductive load handling.

Applications

Server VRM Synchronous Rectifier

Telecom 48V DC-DC Converter

Use Scenario: High-density 48V-to-12V buck converter delivering >300A to CPU/GPU rails in datacenter servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 95%.

Use Value: 0.8mΩ R_DS(on) cuts conduction loss by >60% vs. 3mΩ alternatives, enabling 20W+ thermal savings per phase at 200A.

Use Scenario: Isolated 48V-to-12V LLC resonant converter in telecom power shelves with strict efficiency and reliability requirements.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating in hard-switched mode at 200–300kHz with zero-voltage switching assist.

Use Value: 1640A pulsed current rating and 1.6V/ns dV/dt immunity support robust operation during transient overloads and startup surges.

Industrial UPS Inverter Stage

EV Onboard Charger PFC Switch

Use Scenario: 3-phase inverter stage in 10kVA uninterruptible power supply converting battery DC to clean 230VAC output.

IC Role / Device Role / Timing Role: High-current half-bridge switch handling bidirectional 240A peak currents during line/battery switchover.

Use Value: 240A package-limited continuous current and 175°C max junction temperature ensure stable operation under sustained overload and ambient >60°C.

Use Scenario: Boost PFC switch in 6.6kW EV onboard charger operating at 100kHz with 400V DC-link voltage.

IC Role / Device Role / Timing Role: Fast-switching, low-loss switch in continuous conduction mode (CCM) PFC to meet >98% efficiency targets.

Use Value: 71ns trr and 122nC Q_sync minimize switching loss and gate drive power, reducing thermal stress on gate driver ICs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1324STRLPBF	Tape-and-reel variant of same die and package; identical electrical specs and thermal performance.	No functional difference; selected only for automated SMT placement compatibility.	Choose for volume production with pick-and-place equipment requiring reel packaging.
IPB180N04S4-02	40V V_DSS, 1.8mΩ R_DS(on), TO-263-7 package; higher voltage rating but 2.25× higher on-resistance.	Better suited for 36–48V systems where 24V rating is insufficient; lower current density increases conduction loss at 200A.	Select when system bus voltage exceeds 24V or when higher avalanche margin is prioritized over conduction loss.

Compared with IRF1324STRLPBF, the tube-packaged IRF1324S-7PPBF offers identical performance but simplified handling for prototyping and low-volume builds; versus IPB180N04S4-02, it delivers superior efficiency in 24V systems but lacks voltage headroom for 36V+ applications.

Availability

IRF1324S-7PPBF is available at Aetrix Electronics and suitable for high-efficiency SMPS, uninterruptible power supplies, and high-speed power switching applications requiring stable component supply and traceable sourcing.

Supply support for IRF1324S-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency power conversion systems, emphasizing ultra-low R_DS(on), robust avalanche capability, and high-current packaging for server, telecom, and industrial power supplies.

FAQ

What is the maximum continuous drain current for IRF1324S-7PPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 303A (silicon-limited) per the Absolute Maximum Ratings table. However, the package-limited rating remains 240A regardless of temperature, as bond wire and leadframe thermal constraints dominate at elevated temperatures.

Can IRF1324S-7PPBF be used in paralleled configurations?

Yes - its positive R_DS(on) temperature coefficient (0.023V/°C) enables inherent current sharing. For stable paralleling, match gate drive impedance, use Kelvin source connections, and ensure symmetrical PCB layout to minimize loop inductance imbalance between devices.

Is the D2Pak-7 package thermally compatible with standard FR-4 PCBs?

Yes - when mounted on a 1" square FR-4 PCB with recommended footprint per AN-994, R_θJA is 40°C/W. For production use, thermal vias under the drain pad and 2oz copper are strongly recommended to achieve R_θJA < 20°C/W and sustain 240A continuous operation.

Does IRF1324S-7PPBF require gate resistors for hard-switched operation?

Yes - a series gate resistor (typically 2.7Ω) is required to control dI/dt and suppress oscillation during 160A switching events. The datasheet specifies switching times (e.g., t_r = 240ns) and gate charge (180nC) to size the resistor and driver for target rise/fall times and power dissipation.

IRF1324S-7PPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 24 V

Current - Continuous Drain (Id) @ 25°C:: 240A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1mOhm @ 160A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 252 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7700 pF @ 19 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK (7-Lead)

IRF1324S-7PPBF FAQ

1.How can I place an order for IRF1324S-7PPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1324S-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1324S-7PPBF reliable?

The price and inventory of IRF1324S-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1324S-7PPBF is usually 5 days.

3.What payment methods are accepted for IRF1324S-7PPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1324S-7PPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1324S-7PPBF?

IRF1324S-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1324S-7PPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1324S-7PPBF?

For technical support, including IRF1324S-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1324S-7PPBF requirements.

6.How does Aetrix verify that IRF1324S-7PPBF is sourced from the original manufacturer or authorized distributors?

All IRF1324S-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1324S-7PPBF meets industry standards.

7.What is the process for return or replacement of IRF1324S-7PPBF?

All IRF1324S-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1324S-7PPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1324S-7PPBF part is unused and in its original packaging.

Return procedure for IRF1324S-7PPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…