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Infineon Technologies IRF1324SPBF
- Part No.:
- IRF1324SPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF1324SPBF.pdf
- Description:
- MOSFET N-CH 24V 195A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,078
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Product details
Overview
IRF1324SPBF from Infineon Technologies is a 24 V, 1.3 mΩ typ., 340 A silicon-limited N-channel HEXFET Power MOSFET in D2PAK (TO-263) package, optimized for high-current synchronous rectification and hard-switched SMPS topologies where low conduction loss and robust avalanche capability are critical.
For engineers reviewing the IRF1324SPBF datasheet, IRF1324SPBF pinout, IRF1324SPBF application, or IRF1324SPBF equivalent, key selection criteria include its 1.3 mΩ RDS(on) at VGS = 10 V, 195 A package-limited continuous current, 1420 A pulsed diode current, and validated unclamped inductive switching performance up to 195 A with 46 ns trr.
Technical Context
This MOSFET employs planar silicon process technology with enhanced body diode dV/dt and dI/dt ruggedness, enabling reliable operation in high-frequency, high-di/dt synchronous rectifier circuits. Its gate charge profile (Qg = 160–240 nC, Qgd = 49 nC) supports efficient gate drive design for <100 kHz hard-switched converters.
The device features thermally limited single-pulse avalanche energy of 1420 mJ at IAS = 195 A and is characterized for junction-to-case thermal resistance of 0.50 °C/W - critical for high-power board-level thermal management in UPS and server power supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 24 V - Maximum blocking voltage; defines use in ≤24 V DC bus systems like 12 V/24 V server VRMs and telecom rectifiers. |
| RDS(on) typ. | 1.3 mΩ @ VGS = 10 V, TJ = 25°C - Enables <0.5 W conduction loss at 195 A, reducing heatsink requirements in high-current paths. |
| ID (Silicon Limited) | 340 A @ TC = 25°C - Silicon die current capacity; actual usable current constrained by package and thermal design. |
| ID (Package Limited) | 195 A @ TC = 25°C - Wire-bond current limit; governs maximum continuous PCB-mount current without derating. |
| Qg | 160–240 nC - Total gate charge determines driver strength needed; impacts switching loss and gate drive loop stability. |
| trr | 46 ns @ TJ = 25°C - Body diode reverse recovery time; enables clean commutation in synchronous buck stages above 300 kHz. |
| EAS | 1420 mJ - Single-pulse avalanche energy rating; supports robustness against inductive switching transients in UPS and motor drives. |
Pinout & Package
IRF1324SPBF uses the surface-mount D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection. The package has three terminals: Gate (G), Drain (D), and Source (S), arranged in standard G-D-S order on the lead frame.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Receives 10 V logic-level drive; internal RG = 2.3 Ω affects turn-on/off timing and ringing susceptibility. |
| D | Drain (high-side switch node) | Connected to exposed copper pad; carries full load current and must be soldered to large thermal plane for RθJC = 0.50 °C/W. |
| S | Source (power return path) | Common reference for gate drive and current sensing; low-inductance layout essential for di/dt stability. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dV/dt and dI/dt capability | Validated for di/dt ≤ 450 A/µs and VDD ≤ V(BR)DSS, enabling stable operation in high-frequency synchronous rectification without snubbers. |
| Fully characterized SOA and avalanche ratings | Maximum Safe Operating Area defined up to 100 µs pulse width; EAS = 1420 mJ ensures reliability under unclamped inductive switching stress. |
| Low Coss eff. (TR) | 4490 pF - Effective output capacitance governing turn-off delay and capacitive losses during hard switching at 12–24 V. |
| Lead-free and RoHS-compliant construction | Meets IPC-J-STD-020 moisture sensitivity level 1; suitable for lead-free reflow profiles up to 260°C peak. |
Applications
| High-Efficiency Server VRM | Telecom Rectifier Module |
|---|---|
Use Scenario: Primary-side synchronous rectifier in 48 V input → 12 V output multiphase buck converter for AI accelerator servers. IC Role / Device Role / Timing Role: Low-side power switch handling >200 A per phase with <1.5 mΩ on-resistance to minimize conduction loss. Use Value: Achieves >95% efficiency at 500 W/phase by reducing I²R loss versus higher-RDS(on) alternatives; 46 ns trr prevents shoot-through during dead-time transitions. | Use Scenario: Output rectification stage in 48 V telecom rectifier with active OR-ing and hot-swap capability. IC Role / Device Role / Timing Role: High-current, low-VF body diode used for reverse polarity protection and parallel current sharing. Use Value: 1420 A pulsed source current (ISM) and 1.3 V VSD support 200 A+ parallel configurations with minimal forward drop penalty. |
| Uninterruptible Power Supply (UPS) | Industrial Motor Drive Inverter |
Use Scenario: Bidirectional DC link switch in double-conversion online UPS with battery backup and grid synchronization. IC Role / Device Role / Timing Role: Hard-switched high-side switch operating at 16 kHz with unclamped inductive loads during transfer events. Use Value: 1420 mJ EAS rating withstands worst-case inductive energy dump during grid failure, eliminating need for external clamping diodes. | Use Scenario: Phase-leg low-side switch in 24 V brushless DC motor drive for factory automation actuators. IC Role / Device Role / Timing Role: Fast-turning, avalanche-rugged switch managing PWM commutation and regenerative braking currents. Use Value: 195 A continuous current and 450 A/µs dI/dt capability enable 5 kW peak power delivery with <200 ns total switching time (td(off) + tf = 203 ns). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1324LSPBF | Same die, TO-262 (IPAK) package; RθJC = 0.50 °C/W identical, but lower thermal mass and no exposed drain pad. | Limited to lower-power industrial controls due to reduced PCB thermal coupling and 175 A package current rating. | Select when through-hole mounting or legacy footprint compatibility is required; avoid for >150 A continuous designs. |
| STL220N4L10AG | 24 V, 0.95 mΩ typ., 220 A, DFN8 5×6 mm; lower RDS(on) but only 100 A continuous and no avalanche rating published. | Suitable for space-constrained consumer power banks but not for industrial UPS or server VRMs requiring proven avalanche robustness. | Prefer for compact, low-loss applications below 100 A; reject where unclamped inductive stress or >120 A continuous current is present. |
Compared with IRF1324LSPBF and STL220N4L10AG, IRF1324SPBF uniquely combines D2PAK thermal performance, 195 A package-limited current, and fully characterized 1420 mJ avalanche energy - making it the only option qualified for high-reliability, high-current synchronous rectification in mission-critical power systems.
Availability
IRF1324SPBF is available at Aetrix Electronics and suitable for high-efficiency server VRMs, telecom rectifier modules, and uninterruptible power supply (UPS) systems requiring stable component supply and long-term production continuity.
Supply support for IRF1324SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The IRF HEXFET Power MOSFET product line was engineered for high-current, high-efficiency power conversion in datacenter, telecom, and industrial infrastructure - emphasizing low RDS(on), fast switching, and rugged avalanche performance.
FAQ
What is the maximum continuous drain current for IRF1324SPBF at 100°C case temperature?
The maximum continuous drain current for IRF1324SPBF at TC = 100°C is 240 A, as specified in the Absolute Maximum Ratings table. This value reflects silicon-limited conduction capability under thermal constraint, and assumes proper PCB copper area and airflow to maintain case temperature.
Does IRF1324SPBF support logic-level gate drive?
No - IRF1324SPBF requires VGS = 10 V for full RDS(on) specification (1.3 mΩ). Its gate threshold voltage range is 2.0–4.0 V, but conduction resistance rises sharply below 8 V; it is not rated for reliable operation with 3.3 V or 5 V logic-level drivers.
Can IRF1324SPBF be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (see Fig. 4) ensures inherent current sharing when paralleled. Designers must match gate drive loop inductance and use Kelvin-source connections to prevent oscillation; typical layouts support up to four devices in parallel for >700 A systems.
Is the body diode of IRF1324SPBF suitable for reverse recovery in high-frequency operation?
Yes - with trr = 46 ns at 25°C and Qrr = 160 nC, the body diode is characterized for synchronous rectification up to 500 kHz. Performance degrades above 125°C (trr = 71 ns), so thermal design must keep TJ < 125°C for optimal high-frequency behavior.
IRF1324SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 24 V
- Current - Continuous Drain (Id) @ 25°C:
- 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.65mOhm @ 195A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 240 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7590 pF @ 24 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF1324SPBF FAQ
1.How can I place an order for IRF1324SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF1324SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF1324SPBF reliable?
The price and inventory of IRF1324SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1324SPBF is usually 5 days.
3.What payment methods are accepted for IRF1324SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1324SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF1324SPBF?
IRF1324SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF1324SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF1324SPBF?
For technical support, including IRF1324SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1324SPBF requirements.
6.How does Aetrix verify that IRF1324SPBF is sourced from the original manufacturer or authorized distributors?
All IRF1324SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1324SPBF meets industry standards.
7.What is the process for return or replacement of IRF1324SPBF?
All IRF1324SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1324SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF1324SPBF part is unused and in its original packaging.
Return procedure for IRF1324SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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