Infineon Technologies IRF1324STRL-7PP
- Part No.:
- IRF1324STRL-7PP
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
- Datasheet:
-
IRF1324STRL-7PP.pdf
- Description:
- MOSFET N-CH 24V 240A D2PAK
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IRF1324STRL-7PP from Infineon is a 24V, 0.8 mΩ (typ), D2Pak-7L N-channel HEXFET® Power MOSFET optimized for high-current synchronous rectification in SMPS and UPS systems; supports 240A package-limited continuous drain current at TC = 25°C and features enhanced body diode dV/dt and dI/dt capability.
For engineers reviewing the IRF1324STRL-7PP datasheet, IRF1324STRL-7PP pinout, IRF1324STRL-7PP application, or IRF1324STRL-7PP equivalent, key selection criteria include RDS(on) ≤ 1.0 mΩ max at VGS = 10 V, 1640 A pulsed drain current, 230 mJ single-pulse avalanche energy, and D2Pak-7L thermal performance with RθJC = 0.50 °C/W.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining robust unclamped inductive switching (UIS) capability. Its 7-pin D2Pak layout integrates multiple source and gate connections to reduce parasitic inductance and improve current sharing under hard-switching conditions.
The device is characterized for dynamic dV/dt ruggedness up to 1.6 V/ns and features fully specified SOA curves for avalanche, safe operating area, and reverse recovery (trr = 71–107 ns, Qrr = 83–120 nC), enabling reliable operation in high-frequency, high-efficiency power conversion topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 24 V - Maximum blocking voltage compatible with 12 V/24 V bus architectures and low-voltage synchronous rectification stages. |
| RDS(on) (typ/max) | 0.8 / 1.0 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 240 A, critical for >98% efficiency in high-current SMPS outputs. |
| ID (package-limited) | 240 A @ TC = 25°C - Determined by leadframe thermal and current-carrying capacity, not silicon limit. |
| EAS | 230 mJ - Specifies maximum single-pulse avalanche energy before junction failure; validated per JEDEC JESD24-11. |
| Qg / Qgd | 180 / 58 nC - Low gate charge enables fast switching with moderate gate drivers; Qgd/Qg ratio ~32% supports stable hard-switching behavior. |
| trr / Qrr | 71–107 ns / 83–120 nC - Body diode recovery performance validated at 160 A, 100 A/µs, enabling zero-voltage switching (ZVS) assist in LLC resonant converters. |
Pinout & Package
IRF1324STRL-7PP uses the D2Pak-7L (TO-263-7) surface-mount package with exposed drain pad and dual-source/gate configurations for reduced loop inductance and improved thermal transfer. The 7-pin layout includes three source terminals (S1–S3), two gate terminals (G1–G2), one drain terminal (D), and one Kelvin source (KS) for accurate gate drive referencing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D | Drain | Main high-side power path connection; electrically tied to exposed copper pad for low-inductance, high-current routing and thermal dissipation. |
| S1, S2, S3 | Source | Three parallel source terminals minimize source inductance and distribute high-current return paths across PCB traces. |
| G1, G2 | Gate | Dual gate inputs allow independent gate driver placement to balance gate loop inductance and suppress oscillation in paralleled configurations. |
| KS | Kelvin Source | Reference node for gate drive return; isolates gate control path from high-current source transients to improve switching stability. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dV/dt capability | 1.6 V/ns peak diode recovery rate - prevents false turn-on during fast commutation in synchronous rectifiers. |
| Low effective output capacitance (Coss,eff) | 4780 pF (energy-related) - reduces switching loss during hard-switched transitions and improves ZVS margin in resonant topologies. |
| Thermally optimized D2Pak-7L package | RθJC = 0.50 °C/W - enables 300 W power dissipation with minimal case-to-junction temperature rise under forced-air cooling. |
| Fully characterized avalanche SOA | Validated EAS = 230 mJ at TJ = 25°C - allows safe operation in unclamped inductive switching events without derating. |
Applications
| High-Efficiency SMPS Output Stage | Uninterruptible Power Supply (UPS) Inverter |
|---|---|
Use Scenario: Primary synchronous rectifier in 12 V/24 V output stage of telecom/server DC-DC converters operating at 300–500 kHz. IC Role / Device Role / Timing Role: Low-side power switch replacing Schottky diodes to reduce conduction loss and improve thermal management. Use Value: Achieves <0.5 VSD forward drop and <1.5 W conduction loss at 240 A, enabling >98.2% full-load efficiency. | Use Scenario: Bidirectional power switch in double-conversion UPS inverters handling 2–5 kVA loads with battery backup. IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch in H-bridge output stage with fast body diode recovery for regenerative braking support. Use Value: Supports 1640 A pulsed current and 230 mJ avalanche energy, ensuring fault tolerance during grid transients and load dumps. |
| Hard-Switched Motor Drive Half-Bridge | High-Frequency LLC Resonant Converter |
Use Scenario: Low-side switch in industrial BLDC motor drives operating at 20–40 kHz with PWM modulation and overcurrent protection. IC Role / Device Role / Timing Role: Main power switch with Kelvin source sensing for precise current limiting and short-circuit protection. Use Value: Dual gate terminals enable matched gate drive impedance, reducing shoot-through risk and improving dv/dt immunity above 50 V/ns. | Use Scenario: Secondary-side synchronous rectifier in 600–1000 kHz LLC resonant converters for datacenter PSUs and AI accelerators. IC Role / Device Role / Timing Role: Fast-recovery body diode-assisted rectifier with low Qrr to minimize dead-time losses and enable adaptive ZVS tuning. Use Value: trr = 71 ns and Qrr = 83 nC at 25°C reduce reverse recovery loss by >40% vs. standard MOSFETs, improving light-load efficiency. |
Availability
IRF1324STRL-7PP is available at Aetrix Electronics and suitable for high-current synchronous rectification, uninterruptible power supply inverters, and hard-switched motor drive applications requiring stable component supply and long-term production continuity.
Supply support for IRF1324STRL-7PP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.
The IRF1324STRL-7PP belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for ultra-high-current, low-voltage power conversion where RDS(on), avalanche ruggedness, and dynamic diode performance are critical.
FAQ
What is the difference between IRF1324STRL-7PP and IRF1324S-7PPbF?
IRF1324STRL-7PP is the tape-and-reel version of the same D2Pak-7L MOSFET as IRF1324S-7PPbF, which is offered in tube packaging. Both share identical electrical specifications, thermal ratings, and pinout. The 'TRL' suffix denotes automated assembly compatibility, while 'bF' indicates lead-free RoHS-compliant finish - both meet the same JEDEC qualification standards.
Can IRF1324STRL-7PP be used in paralleled configurations?
Yes - its D2Pak-7L package includes dual gate and triple source terminals plus a Kelvin source, enabling balanced gate drive and current sharing. Application Note AN-1140 confirms stable paralleling up to four units with matched gate resistors and symmetrical PCB layout, provided thermal coupling and gate loop inductance are controlled.
Is the body diode suitable for reverse recovery in ZVS circuits?
Yes - the device is fully characterized for diode recovery with trr = 71–107 ns and Qrr = 83–120 nC at 160 A, 100 A/µs, and is validated for use in ZVS-enabled LLC and phase-shifted full-bridge topologies. Its enhanced dV/dt ruggedness (1.6 V/ns) prevents spurious turn-on during fast voltage transitions.
What is the maximum allowable case temperature for continuous 240 A operation?
Continuous 240 A operation is rated at TC = 25°C per datasheet. At higher case temperatures, current must be derated linearly: ID drops to 303 A at TC = 100°C (silicon-limited) and falls below 240 A above ~45°C due to package thermal limits. For sustained 240 A, active cooling maintaining TC ≤ 35°C is recommended.
IRF1324STRL-7PP Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 24 V
- Current - Continuous Drain (Id) @ 25°C:
- 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1mOhm @ 160A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 252 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7700 pF @ 19 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK (7-Lead)
IRF1324STRL-7PP FAQ
1.How can I place an order for IRF1324STRL-7PP through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF1324STRL-7PP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF1324STRL-7PP reliable?
The price and inventory of IRF1324STRL-7PP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1324STRL-7PP is usually 5 days.
3.What payment methods are accepted for IRF1324STRL-7PP?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1324STRL-7PP transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF1324STRL-7PP?
IRF1324STRL-7PP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF1324STRL-7PP order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF1324STRL-7PP?
For technical support, including IRF1324STRL-7PP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1324STRL-7PP requirements.
6.How does Aetrix verify that IRF1324STRL-7PP is sourced from the original manufacturer or authorized distributors?
All IRF1324STRL-7PP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1324STRL-7PP meets industry standards.
7.What is the process for return or replacement of IRF1324STRL-7PP?
All IRF1324STRL-7PP units undergo pre-shipment inspection (PSI). If there is an issue with IRF1324STRL-7PP, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF1324STRL-7PP part is unused and in its original packaging.
Return procedure for IRF1324STRL-7PP:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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