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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1324STRLPBF

Name: IRF1324STRLPBF
Brand: Infineon Technologies
SKU: IRF1324STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1324STRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1324STRLPBF.pdf

Description:: MOSFET N-CH 24V 195A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1324STRLPBF from Infineon Technologies (formerly International Rectifier) is a 24 V, 1.3 mΩ typ., 340 A silicon-limited N-channel HEXFET® Power MOSFET in D2PAK (TO-263) package with enhanced avalanche ruggedness and optimized body diode dV/dt and dI/dt capability. It serves as a high-current synchronous rectifier or primary-side switch in hard-switched DC-DC converters and UPS output stages.

For engineers reviewing the IRF1324STRLPBF datasheet, IRF1324STRLPBF pinout, IRF1324STRLPBF application, or IRF1324STRLPBF equivalent, key selection criteria include its 1.3 mΩ R_DS(on) at 10 V_GS, 195 A package-limited continuous current, 160 nC total gate charge, 3440 pF C_oss, and 1420 A pulsed body diode current - all critical for high-efficiency, high-density power conversion design.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted source metallization to achieve ultra-low on-resistance while maintaining robust unclamped inductive switching (UIS) performance. Its dynamic parameters - including 49 nC Q_gd, 190 ns rise time, and 46 ns reverse recovery time - are characterized under 195 A, 12 V conditions with 2.7 Ω gate resistance.

The device integrates an intrinsic fast-recovery body diode rated for 350 A continuous and 1420 A pulsed conduction, with V_SD ≤ 1.3 V and dI/dt ≤ 450 A/µs capability. Thermal design is enabled by R_θJC = 0.50 °C/W and SOA curves validated up to 10 ms pulse width at T_C = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	24 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 12 V–24 V systems.
R_DS(on) typ.	1.3 mΩ @ V_GS = 10 V, T_J = 25°C - Enables <1.7 W conduction loss at 195 A, critical for >98% efficiency in high-current SMPS.
I_D (silicon)	340 A @ T_C = 25°C - Silicon current limit determined by junction temperature; exceeds package rating and defines thermal ceiling.
Q_g	160 nC max - Gate drive energy requirement directly impacts driver sizing and switching loss in 100–500 kHz applications.
C_oss	3440 pF - Output capacitance value used to calculate turn-off loss and resonant tank behavior in ZVS/ZCS topologies.
E_AS	1420 mJ - Single-pulse avalanche energy rating; supports reliable operation during transient overvoltage events without derating.
V_GS(th)	2.0–4.0 V - Threshold voltage range ensures stable turn-on with standard 3.3 V or 5 V logic-level gate drivers.
trr	46 ns @ T_J = 25°C - Body diode reverse recovery time; enables clean commutation in synchronous rectification with minimal shoot-through risk.

Pinout & Package

IRF1324STRLPBF is housed in a surface-mount D2PAK (TO-263) package with three terminals: Gate (G), Drain (D), and Source (S). The drain is electrically connected to the exposed copper pad on the bottom of the package, requiring direct thermal connection to PCB copper for optimal heat dissipation.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires low-impedance drive due to 160 nC Q_g.
D	Drain current input/output	High-current path tied to PCB thermal pad; must be routed with ≥2 oz copper and thermal vias for R_θJC = 0.50 °C/W performance.
S	Source reference and return path	Common node for gate drive return and load current return; layout must minimize L_GS to prevent oscillation during hard switching.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	1420 mJ single-pulse E_AS with full characterization across temperature - eliminates need for external snubbers in UPS and motor drive inverter legs.
Optimized body diode dI/dt capability	Rated for 450 A/µs di/dt with I_SD ≤ 195 A - enables reliable synchronous rectification in high-frequency LLC and phase-shifted full-bridge converters.
Low C_oss × R_DS(on) figure-of-merit	3440 pF × 1.3 mΩ = 4.47 - benchmark value for high-frequency switching efficiency; outperforms legacy 40 V MOSFETs in 12 V bus applications.
Lead-free and RoHS-compliant construction	Meets IPC-J-STD-020D reflow profile with peak soldering temperature of 260°C - compatible with standard SMT assembly lines without process modification.
Thermally enhanced D2PAK package	R_θJC = 0.50 °C/W - enables 340 W power dissipation at ΔT = 170°C, supporting compact heatsink-less designs in space-constrained telecom rectifiers.

Applications

Server VRM Output Stage

Telecom Rectifier Module

Use Scenario: High-current, low-voltage point-of-load regulation in dual-phase 400 A server VRMs operating at 500 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diodes to reduce conduction loss and improve thermal margin.

Use Value: 1.3 mΩ R_DS(on) cuts rectifier loss by 65% vs. 3.5 mΩ alternatives, enabling 95%+ efficiency at 12 V input and 0.8 V/400 A output.

Use Scenario: Primary-side high-side switch in 48 V input, 12 V/100 A telecom rectifier modules with active OR-ing.

IC Role / Device Role / Timing Role: Hard-switched main power switch with integrated body diode conducting reverse current during dead-time.

Use Value: 1420 mJ E_AS and 46 ns trr ensure no failure during 100 µs short-circuit transients and clean zero-voltage turn-on in multi-phase interleaved designs.

Industrial UPS Inverter Leg

EV Onboard Charger DC-Link Switch

Use Scenario: Half-bridge leg in 3 kVA industrial UPS inverters delivering 230 VAC from 400 VDC bus with 16 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current flow during regeneration and fault current interruption.

Use Value: 195 A package-limited current and 350 A continuous body diode support 150% overload for 30 s without thermal shutdown, meeting UL 1778 hold-time requirements.

Use Scenario: DC-link switching device in 6.6 kW OBCs converting AC grid to 400 VDC battery bus using two-level PFC + LLC topology.

IC Role / Device Role / Timing Role: High-side switch in boost PFC stage operating at 70 kHz with 100 kHz ripple current.

Use Value: 160 nC Q_g and 190 ns rise time allow gate drive with 2 A peak current and <100 ns propagation delay, minimizing switching loss at 10 kW/m³ power density.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1324SPbF	Same die, TO-262 (I2PAK) through-hole package; R_θJC = 0.46 °C/W; no exposed drain pad.	Preferred for prototyping or low-volume industrial controls where manual soldering or socketing is required.	Select when mechanical robustness and serviceability outweigh thermal performance and SMT automation needs.
IPB132N20N3 G	20 V, 1.3 mΩ, 320 A, TSDSON-8 package; lower V_DSS; 120 nC Q_g; no UIS rating published.	Suitable only for 12 V bus systems with strict gate drive current limits and no unclamped inductive loads.	Choose only if system bus voltage never exceeds 16 V and avalanche stress is absent; not drop-in for UPS or motor drive.

Compared with IRF1324SPbF, the IRF1324STRLPBF offers superior thermal performance via D2PAK's exposed drain pad but requires precise SMT reflow control; versus IPB132N20N3 G, it provides higher voltage margin and proven avalanche capability at the cost of higher Q_g and larger footprint.

Availability

IRF1324STRLPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and high-speed power switching circuits requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF1324STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and industrial IoT solutions.

The IRF1324x series belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, low-voltage DC-DC conversion in datacenter, telecom, and industrial power systems demanding ultra-low R_DS(on) and rugged reliability.

FAQ

What is the maximum continuous drain current for IRF1324STRLPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 240 A, as specified in the Absolute Maximum Ratings table. This value reflects silicon-limited conduction under thermal equilibrium conditions and assumes proper PCB copper area and thermal via implementation per AN-994 guidelines.

Does IRF1324STRLPBF support gate drive from a 3.3 V microcontroller?

No - the gate threshold voltage range is 2.0–4.0 V, but full enhancement requires V_GS ≥ 10 V to achieve the rated 1.3 mΩ R_DS(on). Driving from 3.3 V results in R_DS(on) > 10 mΩ and excessive conduction loss; a dedicated gate driver IC with 10–15 V output is mandatory.

Can IRF1324STRLPBF replace IRF1324LPbF in existing TO-262 layouts?

No - IRF1324STRLPBF uses a D2PAK (TO-263) surface-mount package with an exposed drain pad, while IRF1324LPbF is in TO-262 (I2PAK) through-hole format. Footprint, soldering method, and thermal interface are incompatible; board redesign is required for substitution.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

A 2.7 Ω gate resistor is validated in the datasheet for 195 A switching with 10 V drive, yielding 190 ns rise time and 120 ns fall time. For 100 kHz hard switching, this value balances switching loss reduction against gate drive power and ringing suppression; values below 2.2 Ω increase EMI risk without meaningful loss improvement.

IRF1324STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 24 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.65mOhm @ 195A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7590 pF @ 24 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1324STRLPBF FAQ

1.How can I place an order for IRF1324STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1324STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1324STRLPBF reliable?

The price and inventory of IRF1324STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1324STRLPBF is usually 5 days.

3.What payment methods are accepted for IRF1324STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1324STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1324STRLPBF?

IRF1324STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1324STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1324STRLPBF?

For technical support, including IRF1324STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1324STRLPBF requirements.

6.How does Aetrix verify that IRF1324STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF1324STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1324STRLPBF meets industry standards.

7.What is the process for return or replacement of IRF1324STRLPBF?

All IRF1324STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1324STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1324STRLPBF part is unused and in its original packaging.

Return procedure for IRF1324STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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