Infineon Technologies IRF1404ZGPBF

Overview

IRF1404ZGPBF from Infineon Technologies is a 40V, 75A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, featuring 3.7mΩ R_DS(on) at V_GS = 10V, 175°C maximum junction temperature, and rated for repetitive avalanche energy up to 190mJ - used in high-current DC-DC converters, motor drive half-bridges, and uninterruptible power supplies.

For engineers reviewing the IRF1404ZGPBF datasheet, IRF1404ZGPBF pinout, IRF1404ZGPBF application, or IRF1404ZGPBF equivalent, key selection criteria include continuous drain current capability at elevated case temperatures, gate charge (100–150nC), body diode reverse recovery performance (t_rr = 28–42ns, Q_rr = 34–51nC), and thermal resistance (R_θJC = 0.65°C/W).

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction losses while maintaining robust switching behavior. Its low R_DS(on) of 3.7mΩ supports high-efficiency operation at 75A continuous drain current, and its 175°C T_J rating enables reliable use in thermally constrained industrial environments.

The device integrates a fast-recovery body diode with t_rr ≤ 42ns and Q_rr ≤ 51nC, enabling hard-switched topologies without external freewheeling diodes. Repetitive avalanche capability (E_AR = 130mJ at T_J = 25°C) and unclamped inductive switching robustness are validated per JEDEC standards.

Key Specifications

Pinout & Package

IRF1404ZGPBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standard mounting hole, and 10 lbf·in torque specification. The package provides low thermal resistance (R_θJC = 0.65°C/W) and mechanical stability for high-vibration environments.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP75NF75 and IXTH75N10L2, IRF1404ZGPBF delivers optimal balance of low R_DS(on), validated avalanche robustness, and thermal headroom for 40V-class high-current switching - making it preferred for space-constrained, thermally demanding industrial power stages.

Availability

IRF1404ZGPBF is available at Aetrix Electronics and suitable for motor drives, UPS inverters, and DC-DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF1404ZGPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRF HEXFET® product line targets high-efficiency power conversion systems, emphasizing low R_DS(on), rugged avalanche performance, and thermal reliability for industrial, automotive, and renewable energy applications.

FAQ

What is the maximum continuous drain current for IRF1404ZGPBF at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 320A (silicon-limited) but package-limited to 75A. The datasheet specifies 75A as the absolute maximum continuous current under all conditions - this reflects thermal saturation of the TO-220AB package, not silicon capability. Derating curves confirm usable current drops to ~45A at T_C = 100°C for safe operation within R_θJC limits.

Does IRF1404ZGPBF have a built-in body diode, and what are its key parameters?

Yes, IRF1404ZGPBF integrates a monolithic N-channel MOSFET body diode with V_SD ≤ 1.3V at 75A, t_rr = 28–42ns, and Q_rr = 34–51nC. These values are measured at T_J = 25°C with di/dt = 100A/µs and V_DD = 20V. The diode's soft recovery characteristic reduces EMI and voltage spikes during commutation in buck and half-bridge topologies.

Can IRF1404ZGPBF be used in parallel configurations, and what layout considerations apply?

Yes, IRF1404ZGPBF supports paralleling due to its positive R_DS(on) temperature coefficient, which promotes current sharing. Critical layout practices include matched gate trace lengths (<5mm difference), individual 3.0Ω gate resistors, Kelvin-source connections to minimize L_S imbalance, and symmetrical thermal mounting to ensure ΔT_J < 5°C between devices. PCB copper area must support ≥100A/sq.in current density.

What is the recommended gate drive voltage range, and why is 10V specified instead of 5V logic-level operation?

The gate threshold voltage (V_GS(th)) ranges from 2.0V to 4.0V, but full enhancement requires V_GS ≥ 10V to achieve the rated 3.7mΩ R_DS(on). At 5V, R_DS(on) increases to >12mΩ - tripling conduction loss. The device is not logic-level; using 10V ensures minimum on-resistance, stable switching timing, and immunity to noise-induced partial turn-on during high-dV/dt events.