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Infineon Technologies IRF1404ZSPBF
- Part No.:
- IRF1404ZSPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF1404ZSPBF.pdf
- Description:
- MOSFET N-CH 40V 180A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,175
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Product details
Overview
IRF1404ZSPBF from Infineon Technologies is a 40 V, 120 A (package-limited), 2.7 mΩ typ. RDS(on) N-channel D²PAK power MOSFET optimized for high-current DC-DC conversion, motor drive, and UPS systems. It features 175°C junction rating, 710 mJ single-pulse avalanche energy, and fast switching with 100 nC total gate charge.
For engineers reviewing the IRF1404ZSPBF datasheet, IRF1404ZSPBF pinout, IRF1404ZSPBF application, or IRF1404ZSPBF equivalent, key selection criteria include its low RDS(on) at 10 V gate drive, robust repetitive avalanche capability up to Tjmax, and thermal performance in high-power synchronous rectification and hard-switched SMPS designs.
Technical Context
This device employs advanced HEXFET® silicon processing to minimize conduction loss while maintaining ruggedness under unclamped inductive switching. Its 0.75 °C/W junction-to-case thermal resistance and 4.5 nH internal drain inductance support high di/dt operation in 48 V automotive and industrial power stages.
The integrated body diode exhibits 1.3 V forward voltage at 75 A and 28–42 ns reverse recovery time, enabling use in freewheeling and synchronous rectifier roles without external diode supplementation in medium-frequency (<100 kHz) topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBRDSS | 40 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 36–48 V bus applications. |
| RDS(on) typ. | 2.7 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 75 A, critical for thermally constrained PCB layouts. |
| ID (package) | 120 A - Continuous current limit set by D²PAK package thermal and bondwire capacity, not silicon. |
| EAS tested | 710 mJ - Verified single-pulse avalanche energy at Tj = 25°C; supports reliable operation during load dump or short-circuit transients. |
| Qg max. | 150 nC - Gate drive energy requirement determines driver sizing and switching loss trade-off at 50–100 kHz. |
| RθJC | 0.75 °C/W - Enables direct heatsink mounting with minimal thermal interface resistance for >90% power dissipation path efficiency. |
| VSD | 1.3 V @ IS = 75 A - Body diode forward drop impacts freewheeling loss and thermal balance in half-bridge configurations. |
Pinout & Package
IRF1404ZSPBF is housed in a surface-mount D²PAK (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides primary thermal path to PCB copper or heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main high-current output terminal | Electrically and thermally connected to PCB copper pour or heatsink; carries full load current and dissipates >90% of heat. |
| Source (Pins 1 & 2) | Reference node for gate control and current return | Parallel pins reduce source inductance (7.5 nH) and improve stability in high-di/dt switching; connects to power ground plane. |
| Gate (Pin 3) | Control input for channel modulation | High-impedance input requiring 10 V drive for full enhancement; sensitive to ringing due to 42 nC Miller charge (Qgd). |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 2.7 mΩ typ. at 10 V gate drive enables <1.5 W conduction loss at 75 A, reducing heatsink size in 1–3 kW converters. |
| 175°C junction rating | Allows sustained operation at elevated ambient temperatures (e.g., engine bay, enclosed industrial enclosures) without derating. |
| Repetitive avalanche rated | Validated for repeated unclamped inductive switching up to Tjmax, eliminating need for external snubbers in relay/motor drive flyback paths. |
| Lead-free construction | RoHS-compliant D²PAK package meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3) for standard SMT assembly. |
Applications
| Automotive DC-DC Converters | Industrial Motor Drives |
|---|---|
Use Scenario: 12 V to 48 V bidirectional DC-DC converter in 48 V mild hybrid vehicles. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 50–100 kHz with forced-air cooling. Use Value: 2.7 mΩ RDS(on) reduces conduction loss by 35% vs. legacy 4.5 mΩ devices, improving system efficiency from 92% to 94.5% at 1.5 kW. | Use Scenario: Three-phase inverter stage for 3 kW HVAC compressor drives. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid topology with 10 kHz PWM frequency. Use Value: 710 mJ EAS rating ensures survival during motor stall events without external clamping, simplifying protection circuitry. |
| Uninterruptible Power Supplies | Server VRMs |
Use Scenario: Output stage switch in online double-conversion UPS delivering 2 kVA with battery backup. IC Role / Device Role / Timing Role: Primary-side switching FET in phase-shifted full-bridge topology with ZVS. Use Value: 0.75 °C/W RθJC allows direct heatsink mounting, achieving 65°C case temperature at full load-within thermal budget for fanless operation. | Use Scenario: High-current phase-leg switch in 48 V to 1 V server voltage regulator module. IC Role / Device Role / Timing Role: Synchronous buck high-side FET operating at 300–500 kHz with multiphase interleaving. Use Value: 100 nC Qg enables efficient gate driving with dual-MOSFET drivers, minimizing dead-time losses while maintaining <10 ns shoot-through margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP120N4F6 | RDS(on) = 3.2 mΩ (higher), Qg = 125 nC (lower), TO-220 package | Limited to lower-current (<80 A) air-cooled designs due to higher thermal resistance | Select when cost sensitivity outweighs efficiency targets and board space permits through-hole mounting. |
| IXTH120N40L2 | RDS(on) = 2.9 mΩ, 150°C Tj rating, TO-247 package | Requires larger heatsink footprint but offers superior SOA for linear-mode operation | Prefer for analog pass-element or soft-start applications where extended safe operating area matters more than footprint. |
Compared with STP120N4F6 and IXTH120N40L2, IRF1404ZSPBF delivers the lowest RDS(on) in D²PAK form factor and highest avalanche energy per unit volume, making it optimal for space-constrained, high-efficiency 48 V power stages where thermal management is via PCB copper rather than discrete heatsinks.
Availability
IRF1404ZSPBF is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.
Supply support for IRF1404ZSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The IRF1404ZSPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-efficiency switching in 12–48 V power conversion systems where low on-resistance and rugged transient handling are essential.
FAQ
What is the maximum continuous drain current for IRF1404ZSPBF at 100°C case temperature?
The maximum continuous drain current is 75 A at TC = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 120 A (TC = 25°C) package limit and accounts for reduced RDS(on) temperature coefficient and safe operating area constraints.
Can IRF1404ZSPBF be used in avalanche mode repeatedly?
Yes-Infineon explicitly rates IRF1404ZSPBF for repetitive avalanche operation up to Tjmax = 175°C. Figures 15 and 16 in the datasheet provide validated curves for allowable avalanche current versus pulse width and energy versus starting junction temperature under defined test conditions.
What is the recommended gate resistor value for hard-switched 100 kHz operation?
A 3.0 Ω gate resistor is used in the official switching time test circuit (Fig. 18a) and yields measured td(on) = 18 ns, tr = 110 ns, td(off) = 36 ns, and tf = 58 ns. For 100 kHz hard-switching, this value balances switching loss reduction against gate drive strength and EMI control.
Does IRF1404ZSPBF have a built-in body diode, and what are its key parameters?
Yes-it integrates a robust N-channel MOSFET body diode with VSD = 1.3 V at IS = 75 A, trr = 28–42 ns, and Qrr = 34–51 nC. These values are measured under standardized conditions (TJ = 25°C, IF = 75 A, dI/dt = 100 A/μs) and support freewheeling in half-bridge and synchronous rectifier topologies.
IRF1404ZSPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.7mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 150 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4340 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF1404ZSPBF FAQ
1.How can I place an order for IRF1404ZSPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF1404ZSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF1404ZSPBF reliable?
The price and inventory of IRF1404ZSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1404ZSPBF is usually 5 days.
3.What payment methods are accepted for IRF1404ZSPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1404ZSPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF1404ZSPBF?
IRF1404ZSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF1404ZSPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF1404ZSPBF?
For technical support, including IRF1404ZSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1404ZSPBF requirements.
6.How does Aetrix verify that IRF1404ZSPBF is sourced from the original manufacturer or authorized distributors?
All IRF1404ZSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1404ZSPBF meets industry standards.
7.What is the process for return or replacement of IRF1404ZSPBF?
All IRF1404ZSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1404ZSPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF1404ZSPBF part is unused and in its original packaging.
Return procedure for IRF1404ZSPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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