Infineon Technologies IRF1404ZSTRL

Overview

IRF1404ZSTRL from Infineon Technologies is a 40 V, 180 A (silicon-limited), N-channel enhancement-mode HEXFET® Power MOSFET in D²PAK (TO-263) package, featuring 2.7 mΩ typical R_DS(on), 175°C maximum junction temperature, and rated for repetitive avalanche energy up to 200 mJ. It serves as a high-current, low-loss main switch in DC-DC converters, motor drives, and UPS systems.

For engineers reviewing the IRF1404ZSTRL datasheet, IRF1404ZSTRL pinout, IRF1404ZSTRL application, or IRF1404ZSTRL equivalent, key selection criteria include its 40 V V_(BR)DSS, 2.7 mΩ R_DS(on) at V_GS = 10 V, 100 nC total gate charge, body diode reverse recovery time of 28–42 ns, and D²PAK thermal resistance of 0.75°C/W junction-to-case.

Technical Context

This MOSFET employs advanced planar silicon processing to minimize conduction loss while sustaining high pulsed current capability (IDM = 710 A). Its design integrates a robust intrinsic body diode with 1.3 V forward voltage and controlled reverse recovery (Q_rr = 34–51 nC), enabling reliable operation in hard-switched inductive loads.

The device supports fast switching (t_d(on) = 18 ns, t_r = 110 ns) with low gate charge (Q_g = 100–150 nC) and exhibits stable on-resistance over temperature (R_DS(on) doubles between 25°C and 175°C), making it suitable for thermally constrained industrial power stages.

Key Specifications

Pinout & Package

IRF1404ZSTRL is housed in a surface-mount D²PAK (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides low thermal resistance (R_θJC = 0.75°C/W) and must be soldered to a PCB copper area for thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 40 V power switching applications.

Compared with STL180N4F6AG and IXFH180N40P3, IRF1404ZSTRL offers optimal balance of low-profile D²PAK packaging, proven avalanche ruggedness, and industry-standard thermal interface-making it ideal for high-volume industrial power modules where manufacturability and reliability are jointly prioritized.

Availability

IRF1404ZSTRL is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial battery chargers requiring stable component supply and long-term production continuity.

Supply support for IRF1404ZSTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

The IRF1404Z series belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial motor control, renewable energy inverters, and server power supplies.

FAQ

What is the maximum continuous drain current for IRF1404ZSTRL at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 120 A (package-limited). This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and assumes proper PCB copper area and thermal interface. Exceeding this current risks exceeding the 175°C maximum junction temperature under steady-state conditions.

Does IRF1404ZSTRL require a gate resistor for safe switching?

Yes-a gate resistor (typically 3–10 Ω) is required to control dV/dt and prevent oscillation during turn-on/turn-off. The 100–150 nC total gate charge and low gate threshold (2.0–4.0 V) make it susceptible to ringing without proper gate drive impedance; values outside this range may increase switching loss or cause shoot-through in bridge configurations.

Can IRF1404ZSTRL be used in synchronous rectification applications?

Yes-the device's low R_DS(on) (2.7 mΩ), fast body diode (t_rr = 28–42 ns), and low Q_rr (34–51 nC) make it suitable for synchronous rectification in LLC and buck converters up to 500 kHz. However, precise gate timing relative to the primary-side switch is essential to avoid cross-conduction.

Is the D²PAK package of IRF1404ZSTRL compatible with standard reflow soldering profiles?

Yes-the lead-free D²PAK package is qualified for standard Pb-free reflow profiles (JEDEC J-STD-020), including peak temperatures up to 260°C for 10 seconds. Proper thermal relief on the drain pad and adequate stencil aperture design are required to ensure void-free solder joints and optimal thermal performance.