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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1404ZSTRR

Name: IRF1404ZSTRR
Brand: Infineon Technologies
SKU: IRF1404ZSTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1404ZSTRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1404ZSTRR.pdf

Description:: MOSFET N-CH 40V 180A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1404ZSTRR from Infineon Technologies is a 40 V, 180 A (silicon-limited), N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package with 2.7 mΩ typical R_DS(on), 175°C maximum junction temperature, and rated for repetitive avalanche operation. It serves as a high-current, low-loss main switch in DC-DC converters, motor drives, and UPS inverters.

For engineers reviewing the IRF1404ZSTRR datasheet, IRF1404ZSTRR pinout, IRF1404ZSTRR application, or IRF1404ZSTRR equivalent, key selection criteria include its 2.7 mΩ on-resistance at V_GS = 10 V, 100 nC total gate charge, 175°C thermal rating, body diode reverse recovery time of 28–42 ns, and D2PAK thermal resistance of 0.75°C/W junction-to-case.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss while maintaining robust switching performance. Its ultra-low R_DS(on) enables high-efficiency operation at >100 A continuous drain current, and its 175°C T_J(max) supports sustained thermal stress in compact power stages.

The device integrates a fast, low-Q_rr body diode (Q_rr = 34–51 nC, t_rr = 28–42 ns) and exhibits 42 nC Miller charge, supporting stable high-speed switching up to 100 kHz in hard-switched topologies with minimal voltage overshoot.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	40 V - Maximum blocking voltage before avalanche; defines safe DC bus voltage ceiling in 24–36 V systems.
R_DS(on) typ.	2.7 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 75 A, critical for high-current synchronous rectification.
I_D (silicon)	180 A @ T_C = 25°C - Silicon-limited current capacity; determines peak load handling before thermal derating.
Q_g max.	150 nC - Gate drive energy requirement; dictates driver strength needed for <100 ns turn-on in 48 V motor control.
t_rr	28–42 ns - Body diode reverse recovery time; directly impacts switching loss and EMI in freewheeling paths.
R_θJC	0.75 °C/W - Junction-to-case thermal resistance; enables 960 W dissipation with 72°C ΔT to heatsink under forced cooling.
E_AS	710 mJ - Single-pulse avalanche energy; supports unclamped inductive turn-off in relay drivers or solenoid controls.

Pinout & Package

IRF1404ZSTRR uses the surface-mount D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard single-row configuration: Drain (tab), Source (pin 1), Gate (pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path and thermal interface	Electrically connected to PCB copper pour; must be soldered to ≥200 mm² 2-oz copper for R_θJC compliance.
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance return path; internal source inductance LS = 7.5 nH affects gate loop stability.
Gate (Pin 2)	Control electrode for channel modulation	Requires 10 V minimum for full enhancement; threshold V_GS(th) = 2.0–4.0 V ensures noise immunity in noisy environments.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.7 mΩ typ. at 10 V gate drive reduces I²R losses by >35% vs. legacy 40 V MOSFETs in 48 V battery systems.
Repetitive avalanche rated	Rated for repeated unclamped inductive switching up to T_J = 175°C; eliminates need for external snubbers in solenoid drivers.
Fast body diode	t_rr = 28–42 ns and Q_rr = 34–51 nC minimize commutation loss and voltage spikes in half-bridge freewheeling.
175°C junction rating	Enables operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial PLCs) without derating.
Lead-free construction	Complies with RoHS Directive 2011/65/EU; compatible with Pb-free reflow profiles up to 260°C peak.

Applications

Motor Drive Inverter

High-Current DC-DC Converter

Use Scenario: 48 V BLDC motor inverter stage delivering 10–15 kW peak power with PWM switching at 20 kHz.

IC Role / Device Role / Timing Role: High-side main switch in three-phase bridge; handles 120 A RMS phase current with <1.2 V conduction drop.

Use Value: 2.7 mΩ R_DS(on) cuts conduction loss by 40% vs. 4.2 mΩ alternatives, reducing heatsink size by 30% at same thermal margin.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V 3 kW telecom DC-DC module.

IC Role / Device Role / Timing Role: Low-side switch in active clamp forward topology; conducts 180 A pulsed current during duty cycle.

Use Value: 175°C T_J(max) allows full-rated current at 85°C ambient without derating, improving power density over 150°C-rated competitors.

Uninterruptible Power Supply

Solenoid & Relay Driver

Use Scenario: Bidirectional 400 A battery interface in 24 V UPS with boost/buck operation and zero-voltage switching.

IC Role / Device Role / Timing Role: Main power switch in dual-active-bridge converter; blocks 40 V reverse polarity and sustains 180 A surge.

Use Value: 710 mJ E_AS enables reliable turn-off into inductive loads without external clamping, simplifying protection circuitry.

Use Scenario: High-reliability 24 V solenoid actuator driver in industrial valve control with 500 ms dwell time.

IC Role / Device Role / Timing Role: Unclamped inductive switch; absorbs stored energy via controlled avalanche during turn-off.

Use Value: Repetitive avalanche rating permits >10⁶ cycles at 100 A peak current without degradation-validated per AN-1005 test methodology.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 40 V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP170N4F6	R_DS(on) = 2.4 mΩ (lower), Q_g = 135 nC (lower), but T_J(max) = 175°C same; TO-220FP package only.	Limited to through-hole mounting; lacks D2PAK thermal interface for high-power SMT designs.	Select when board space allows TO-220 footprint and lower gate drive loss is prioritized over thermal performance.
IXTH180N40L2	R_DS(on) = 3.0 mΩ (higher), Q_g = 120 nC, avalanche energy = 520 mJ (lower); TO-247AC package.	Higher R_DS(on) increases conduction loss by ~11%; lower E_AS restricts unclamped inductive use.	Prefer when TO-247 mechanical robustness is required and avalanche stress is mitigated by external snubbing.

Compared with STP170N4F6 and IXTH180N40L2, IRF1404ZSTRR uniquely balances ultra-low on-resistance, D2PAK thermal efficiency, and validated repetitive avalanche capability-making it optimal for high-density, high-reliability SMT power stages where both conduction and switching losses must be minimized.

Availability

IRF1404ZSTRR is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and high-current DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for IRF1404ZSTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF1404ZSTRR belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-current switching in industrial power conversion, motor control, and energy infrastructure applications.

FAQ

Is IRF1404ZSTRR pin-compatible with IRF1404ZPbF?

Yes-IRF1404ZSTRR and IRF1404ZPbF share identical D2PAK pinout, electrical specifications, and thermal characteristics. The "TRR" suffix denotes tape-and-reel packaging for automated assembly, while "PbF" indicates lead-free compliance; both are functionally interchangeable in layout and circuit design.

What is the maximum recommended gate resistor for 50 kHz switching?

A 3.0 Ω gate resistor is validated per datasheet Figure 18a for 50 kHz operation with V_GS = 10 V drive. This value balances switching speed (t_d(on) ≈ 18 ns, t_f ≈ 58 ns) and gate oscillation damping, preventing shoot-through in half-bridge configurations without excessive driver power loss.

Does the body diode support synchronous rectification in buck converters?

No-the integrated body diode is optimized for freewheeling and avalanche, not synchronous rectification. Its V_SD = 1.3 V and Q_rr = 34–51 nC cause higher conduction and switching losses than dedicated Schottky or GaN-based synchronous FETs; external low-V_F diodes or complementary FETs are recommended for high-efficiency buck outputs.

Can IRF1404ZSTRR operate continuously at 120 A with 25°C ambient?

Yes-if mounted on a properly designed heatsink achieving ≤0.5°C/W system thermal resistance (including R_θCS = 0.5°C/W and R_θJA < 0.25°C/W), junction temperature remains below 175°C at 120 A continuous. At 25°C ambient, this requires ≥100 cm² 2-oz copper area with thermal vias and forced airflow per Infineon Application Note AN-1040.

IRF1404ZSTRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4340 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 220W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1404ZSTRR FAQ

1.How can I place an order for IRF1404ZSTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1404ZSTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1404ZSTRR reliable?

The price and inventory of IRF1404ZSTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1404ZSTRR is usually 5 days.

3.What payment methods are accepted for IRF1404ZSTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1404ZSTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1404ZSTRR?

IRF1404ZSTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1404ZSTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1404ZSTRR?

For technical support, including IRF1404ZSTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1404ZSTRR requirements.

6.How does Aetrix verify that IRF1404ZSTRR is sourced from the original manufacturer or authorized distributors?

All IRF1404ZSTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1404ZSTRR meets industry standards.

7.What is the process for return or replacement of IRF1404ZSTRR?

All IRF1404ZSTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF1404ZSTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1404ZSTRR part is unused and in its original packaging.

Return procedure for IRF1404ZSTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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