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Infineon Technologies IRF1404ZSTRRPBF
- Part No.:
- IRF1404ZSTRRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF1404ZSTRRPBF.pdf
- Description:
- MOSFET N-CH 40V 180A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,861
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Product details
Overview
IRF1404ZSTRRPBF from Infineon Technologies is a 40 V, 180 A (silicon-limited), N-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263) package with 2.7 mΩ typical RDS(on), 175°C maximum junction temperature, and rated for repetitive avalanche energy up to 480 mJ - deployed in high-current DC-DC converters, motor drives, and UPS inverters.
For engineers reviewing the IRF1404ZSTRRPBF datasheet, IRF1404ZSTRRPBF pinout, IRF1404ZSTRRPBF application, or IRF1404ZSTRRPBF equivalent, key selection criteria include continuous drain current at elevated case temperature, gate charge profile for PWM switching loss estimation, body diode reverse recovery performance, and thermal resistance (RθJC = 0.75°C/W) for heatsink sizing.
Technical Context
This MOSFET employs advanced silicon processing to minimize conduction losses while maintaining robust avalanche capability. Its 2.7 mΩ RDS(on) at VGS = 10 V and 25°C enables high-efficiency operation in 12–48 V bus systems, and its 100 nC total gate charge supports moderate-frequency switching (≤100 kHz) with standard gate drivers.
The integrated body diode exhibits 28–42 ns reverse recovery time and 34–51 nC Qrr, making it suitable for synchronous rectification and freewheeling in hard-switched topologies. Thermal design is anchored by a low 0.75°C/W junction-to-case resistance and 175°C TJ(max), enabling sustained operation under high ambient conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBRDSS | 40 V - Maximum blocking voltage before avalanche; defines safe operating range in 36 V nominal systems. |
| RDS(on) typ. | 2.7 mΩ - Conduction loss of ~0.049 W at 130 A DC; critical for thermal management in high-current paths. |
| ID @ TC = 25°C | 180 A (silicon-limited) - Sustained current capability when heatsink maintains case at 25°C. |
| Qg max. | 150 nC - Gate drive energy requirement; determines driver strength needed for <50 ns switching transitions. |
| EAS tested | 480 mJ - Single-pulse unclamped inductive avalanche energy; validates ruggedness during fault events. |
| RθJC | 0.75°C/W - Enables direct thermal interface to heatsink; 90°C rise at 120 W dissipation. |
| VGS(th) | 2.0–4.0 V - Threshold voltage range ensures reliable turn-on with 5 V logic-level gate signals. |
Pinout & Package
IRF1404ZSTRRPBF is housed in a surface-mount D2Pak (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal conduction surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current sink / high-side switch node | Electrically and thermally connected to PCB copper pour; must be isolated from other layers except dedicated drain plane. |
| Source (Pins 1 & 2) | Reference node for gate drive / current return path | Parallel pins reduce source inductance (<7.5 nH); critical for minimizing voltage overshoot during di/dt transients. |
| Gate (Pin 3) | Control terminal for channel modulation | High-impedance input requiring low-inductance gate loop; sensitive to ringing due to 42 nC Miller charge (Qgd). |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 2.7 mΩ typ. at 10 V - Reduces I²R losses by >30% vs. legacy 40 V MOSFETs in 100 A applications. |
| Repetitive avalanche rating | Rated per JEDEC JESD24-11 - Enables reliable operation under inductive load turn-off without external snubbers. |
| 175°C junction rating | Extended thermal margin - Supports derated operation in sealed enclosures or high-ambient industrial environments. |
| Fast switching speed | tr = 110 ns, tf = 58 ns - Minimizes transition losses in hard-switched SMPS above 20 kHz. |
| Lead-free construction | RoHS-compliant D2Pak - Meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3) for standard SMT reflow. |
Applications
| Motor Drive Inverter | Server PSU Primary Switch |
|---|---|
Use Scenario: Three-phase BLDC motor control in HVAC blowers with 48 V bus and 10–15 kHz PWM. IC Role / Device Role / Timing Role: High-side and low-side power switch in half-bridge legs; handles peak currents >120 A with body diode freewheeling. Use Value: Low RDS(on) reduces conduction loss by 1.8 W per device vs. 4.5 mΩ alternatives, improving system efficiency by 0.4% at full load. | Use Scenario: Primary-side switching in 80 PLUS Titanium 3 kW server power supply using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Main switching FET subjected to ZVS transitions; operates at 100–200 kHz with 32 V VDS stress. Use Value: 150 nC Qg enables use of low-cost gate drivers (e.g., UCC27324) without excessive drive loss or shoot-through risk. |
| Uninterruptible Power Supply | Industrial DC Bus Protection |
Use Scenario: Bidirectional DC-AC inverter stage in 5 kVA online UPS with battery backup and grid synchronization. IC Role / Device Role / Timing Role: Output stage switch handling 180 A surge currents during transfer switching; body diode conducts during dead-time. Use Value: 42 ns trr and 51 nC Qrr limit reverse recovery losses to <0.3 W per device, reducing thermal stress on heatsink. | Use Scenario: Solid-state circuit breaker in 24 V/150 A industrial control panel with fast fault clearing (<100 μs). IC Role / Device Role / Timing Role: Current-controlled switch triggered by overcurrent detection; must sustain avalanche during fault interruption. Use Value: 480 mJ EAS rating allows single-pulse fault energy absorption without destruction, eliminating need for parallel TVS clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP170N4F6 | RDS(on) = 3.2 mΩ (typ), Qg = 132 nC, TO-220FP package | Higher thermal resistance (RθJA = 62°C/W vs. 40°C/W for D2Pak PCB mount) | Preferred where through-hole assembly and lower gate charge are prioritized over thermal performance. |
| IXTH180N40L2 | RDS(on) = 3.0 mΩ (typ), Qg = 175 nC, TO-247 package | Higher gate charge increases driver loss; larger footprint but higher avalanche rating (EAS = 620 mJ) | Chosen when enhanced ruggedness justifies added gate drive complexity and board space. |
Compared with STP170N4F6 and IXTH180N40L2, IRF1404ZSTRRPBF offers the lowest RDS(on) and best thermal interface for surface-mount high-current designs, though its 150 nC Qg requires careful gate loop layout to avoid oscillation.
Availability
IRF1404ZSTRRPBF is available at Aetrix Electronics and suitable for motor drive inverters, server power supplies, uninterruptible power systems, and industrial DC bus protection requiring stable component supply and long-term production continuity.
Supply support for IRF1404ZSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-efficiency switching in industrial power conversion and motor control systems where low conduction loss and avalanche ruggedness are mandatory.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRF1404ZSTRRPBF supports 120 A continuous drain current at TC = 100°C, limited by package thermal constraints rather than silicon capability. This value is specified in the Absolute Maximum Ratings table and reflects derating from the 180 A (TC = 25°C) silicon limit due to reduced heat dissipation capacity at elevated temperatures.
Does this MOSFET require a gate resistor for stability in hard-switched applications?
Yes - a 3–10 Ω series gate resistor is recommended to dampen ringing caused by the 42 nC Miller charge (Qgd) interacting with PCB trace inductance. Test data (Fig. 18b) shows clean switching waveforms only when gate loop inductance is minimized and damping applied, especially at switching frequencies above 50 kHz.
Can the body diode be used for synchronous rectification in a buck converter?
No - the body diode has 28–42 ns reverse recovery time and 34–51 nC Qrr, making it unsuitable for synchronous rectification above ~200 kHz. It is designed for freewheeling and fault-energy absorption, not high-frequency bidirectional conduction; external Schottky or MOSFET-based synchronous rectifiers are required for efficiency-critical topologies.
Is IRF1404ZSTRRPBF pin-compatible with earlier IRF1404 variants?
Yes - the D2Pak (TO-263) footprint and pinout (Drain-tab, Source-pins 1&2, Gate-pin 3) match IRF1404ZSPbF and IRF1404ZLPbF. However, the "STRR" suffix denotes tape-and-reel packaging with enhanced moisture sensitivity control (MSL3), requiring adherence to J-STD-020 bake/reflow profiles prior to assembly.
IRF1404ZSTRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.7mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 150 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4340 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF1404ZSTRRPBF FAQ
1.How can I place an order for IRF1404ZSTRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF1404ZSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF1404ZSTRRPBF reliable?
The price and inventory of IRF1404ZSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1404ZSTRRPBF is usually 5 days.
3.What payment methods are accepted for IRF1404ZSTRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1404ZSTRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF1404ZSTRRPBF?
IRF1404ZSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF1404ZSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF1404ZSTRRPBF?
For technical support, including IRF1404ZSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1404ZSTRRPBF requirements.
6.How does Aetrix verify that IRF1404ZSTRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF1404ZSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1404ZSTRRPBF meets industry standards.
7.What is the process for return or replacement of IRF1404ZSTRRPBF?
All IRF1404ZSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1404ZSTRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF1404ZSTRRPBF part is unused and in its original packaging.
Return procedure for IRF1404ZSTRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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