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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1405LPBF

Name: IRF1405LPBF
Brand: Infineon Technologies
SKU: IRF1405LPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1405LPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF1405LPBF.pdf

Description:: MOSFET N-CH 55V 131A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:2,801

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Product details

Overview

IRF1405LPBF from Infineon Technologies is a 55 V, 131 A N-channel HEXFET® Power MOSFET in TO-262 (ISOTOP) package, featuring 4.6 mΩ typical R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and 590 mJ single-pulse avalanche energy. It serves as a high-current main switch in DC-DC synchronous rectifiers and motor phase-legs.

For engineers reviewing the IRF1405LPBF datasheet, IRF1405LPBF pinout, IRF1405LPBF application, or IRF1405LPBF equivalent, key selection criteria include its 5.3 mΩ max R_DS(on), 680 A pulsed drain current capability, fast 190 ns rise time, and robust 175°C thermal rating for industrial power stage design.

Technical Context

This planar stripe HEXFET device uses advanced silicon processing to minimize conduction loss while maintaining high dv/dt immunity (5.0 V/ns) and fast switching (13 ns turn-on delay, 110 ns fall time). Its body diode exhibits 1.3 V forward voltage at 101 A and 88–130 ns reverse recovery time.

The MOSFET supports repetitive avalanche operation up to T_jmax, enabled by validated thermal response curves and 0.75°C/W junction-to-case thermal resistance. Gate charge parameters (170–260 nC total, 62–93 nC Miller charge) are optimized for gate driver compatibility in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage in off-state; defines upper limit for bus voltage in 48 V systems.
R_DS(on) max	5.3 mΩ @ V_GS = 10 V, I_D = 101 A - Directly determines conduction loss (P_cond ≈ I² × 5.3 mΩ) in continuous high-current operation.
I_D @ T_C = 25°C	131 A - Continuous current rating under ideal heatsink conditions; sets PCB copper and thermal interface requirements.
E_AS	590 mJ - Single-pulse avalanche energy handling capacity; enables reliable unclamped inductive switching in motor drives.
t_r / t_f	190 ns / 110 ns @ V_DD = 38 V, I_D = 110 A - Defines minimum achievable switching period and associated switching loss in PWM converters.
R_θJC	0.75°C/W - Junction-to-case thermal resistance; allows direct calculation of die temperature rise above heatsink temperature.
Q_g max	260 nC - Total gate charge; determines required gate driver peak current (I_drive ≥ Q_g/t_rise) for target switching speed.

Pinout & Package

IRF1405LPBF is housed in a TO-262 (ISOTOP) package with isolated tab, designed for surface-mount or through-hole mounting on thermally enhanced PCBs. The case is electrically connected to the Drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically tied to metal tab; requires insulated mounting hardware when referenced to non-ground potentials.
Source	Return path for load current	Low-inductance connection point for source loop; critical for minimizing switching oscillation and EMI.
Gate	Control input for channel conduction	High-impedance node requiring low-impedance gate driver and RC snubber to suppress ringing during fast transitions.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.6 mΩ typ. at 10 V drive - Reduces conduction loss by >30% vs. legacy 55 V MOSFETs in 100 A applications.
175°C rated junction	Extended thermal margin - Enables operation in sealed enclosures or high ambient environments without derating.
Repetitive avalanche rated	Validated up to T_jmax - Eliminates need for external clamping in inductive load commutation (e.g., BLDC motor phases).
Fast body diode	t_rr = 88–130 ns, Q_rr = 250–380 nC - Minimizes reverse recovery loss and shoot-through risk in synchronous rectification.
Dynamic dv/dt rating	5.0 V/ns - Ensures noise immunity against parasitic turn-on during high-speed switching in high-di/dt circuits.

Applications

Industrial Motor Drive

DC-DC Synchronous Rectifier

Use Scenario: Three-phase inverter stage in 5–10 kW HVAC compressors operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side and low-side switching element in each phase leg; handles bidirectional current with body diode freewheeling.

Use Value: 5.3 mΩ R_DS(on) reduces conduction loss by 2.1 W per device vs. 6.8 mΩ alternatives at 80 A RMS, improving system efficiency by 0.4%.

Use Scenario: Secondary-side synchronous rectification in 48 V input telecom PSUs delivering 12 V/100 A output.

IC Role / Device Role / Timing Role: Low-side rectifying switch replacing Schottky diodes; driven complementary to primary-side MOSFETs.

Use Value: 1.3 V V_SD at 101 A cuts forward drop by 0.5 V vs. 100 V Schottky, reducing rectifier loss by 50 W at full load.

Solar Microinverter H-Bridge

UPS Inverter Stage

Use Scenario: Full-bridge DC-AC conversion stage in 300–500 W residential microinverters with MPPT tracking.

IC Role / Device Role / Timing Role: Bidirectional switching device in H-bridge legs; conducts AC current with body diode conduction during zero-crossings.

Use Value: 590 mJ E_AS withstands unclamped inductive energy from transformer leakage during dead-time transitions.

Use Scenario: Online double-conversion UPS inverter delivering 230 VAC/5 kVA with battery backup.

IC Role / Device Role / Timing Role: Main power switch in three-phase IGBT/MOSFET hybrid inverter; operates at 4–8 kHz with soft-switching assist.

Use Value: 0.75°C/W R_θJC enables direct heatsink mounting without thermal pads, reducing thermal resistance by 0.3°C/W vs. TO-220 equivalents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP130N5F6	R_DS(on) = 4.2 mΩ min, 5.0 mΩ max; 175°C rating; TO-220FP package	Lower R_DS(on) but higher R_θJA (62°C/W); no isolated tab	Select for cost-sensitive designs where heatsink isolation is not required and board space permits TO-220 footprint.
IXTH120N50L2	R_DS(on) = 5.5 mΩ max; 500 V V_DSS; TO-247 package; 150°C T_j	Higher voltage rating but lower thermal capability and slower switching (t_r = 250 ns)	Choose only if 500 V blocking is mandatory and 175°C operation is not needed; avoid for 48 V systems due to over-spec.

Compared with STP130N5F6 and IXTH120N50L2, IRF1405LPBF offers superior thermal performance (0.75°C/W vs. ≥1.2°C/W), verified repetitive avalanche capability, and TO-262 isolation-making it optimal for compact, high-reliability industrial inverters where heatsink grounding constraints exist.

Availability

IRF1405LPBF is available at Aetrix Electronics and suitable for industrial motor drives, solar microinverters, DC-DC synchronous rectifiers, and UPS inverter stages requiring stable component supply and long-term manufacturability.

Supply support for IRF1405LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF1405LPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in motor control, renewable energy, and uninterruptible power systems.

FAQ

Is IRF1405LPBF RoHS-compliant and lead-free?

Yes, IRF1405LPBF is RoHS-compliant and lead-free, as indicated by the "PbF" suffix in its part number and confirmed in Infineon's official compliance documentation. It meets EU Directive 2011/65/EU and JEDEC J-STD-609A Class 3 moisture sensitivity level.

What is the recommended gate resistor value for 100 kHz switching?

For 100 kHz operation with minimal overshoot, a 10 Ω series gate resistor is recommended based on gate charge (260 nC max) and typical driver output impedance. This balances switching speed (≈100 ns effective rise/fall) against ringing and EMI, especially with 1.1 Ω test condition reference data.

Can IRF1405LPBF replace IRF1404 in existing designs?

Yes, IRF1405LPBF is a direct upgrade to IRF1404: both share TO-262 package, 55 V rating, and pinout. However, IRF1405LPBF offers 15% lower R_DS(on) (5.3 mΩ vs. 6.0 mΩ), higher I_D (131 A vs. 120 A), and improved avalanche energy (590 mJ vs. 470 mJ), enabling higher efficiency and reliability without layout changes.

Does the TO-262 package require thermal compound when mounted to a heatsink?

Yes, thermal compound (e.g., silicone-based grease or phase-change pad) is required between the IRF1405LPBF's isolated metal tab and heatsink to minimize interfacial thermal resistance. Mounting torque must be controlled to 1.1 N·m (10 lbf·in) to ensure uniform pressure without damaging the package seal.

IRF1405LPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 131A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.3mOhm @ 101A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 260 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF1405LPBF FAQ

1.How can I place an order for IRF1405LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1405LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1405LPBF reliable?

The price and inventory of IRF1405LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1405LPBF is usually 5 days.

3.What payment methods are accepted for IRF1405LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1405LPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1405LPBF?

IRF1405LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1405LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1405LPBF?

For technical support, including IRF1405LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1405LPBF requirements.

6.How does Aetrix verify that IRF1405LPBF is sourced from the original manufacturer or authorized distributors?

All IRF1405LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1405LPBF meets industry standards.

7.What is the process for return or replacement of IRF1405LPBF?

All IRF1405LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1405LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1405LPBF part is unused and in its original packaging.

Return procedure for IRF1405LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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