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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1405S

Name: IRF1405S
Brand: Infineon Technologies
SKU: IRF1405S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1405S

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1405S.pdf

Description:: MOSFET N-CH 55V 131A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:7,801

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Product details

Overview

IRF1405S from Infineon Technologies (formerly International Rectifier) is a 55V, 131A N-channel D2PAK MOSFET with 4.6 mΩ typical R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and 590 mJ single-pulse avalanche energy. It serves as a high-current power switch in DC-DC converters, motor drives, and UPS systems where low conduction loss and robust avalanche capability are required.

For engineers reviewing the IRF1405S datasheet, IRF1405S pinout, IRF1405S application, or IRF1405S equivalent, key selection criteria include its 5.3 mΩ max R_DS(on), 680 A pulsed drain current, 200 W power dissipation at T_C = 25°C, fast switching (t_r = 190 ns), and body diode reverse recovery charge of 250–380 nC under defined conditions.

Technical Context

This HEXFET® Power MOSFET uses stripe planar processing to achieve ultra-low on-resistance per silicon area. Its gate threshold voltage (2.0–4.0 V) enables standard 10 V logic-level drive, while its 170–260 nC total gate charge supports efficient hard-switching in high-frequency power stages.

The device integrates a robust intrinsic body diode with 1.3 V forward voltage at 101 A and 88–130 ns reverse recovery time. Its thermal design centers on a 0.75°C/W junction-to-case resistance, enabling high-power operation when mounted on heatsinks with proper mechanical torque (1.1 N·m).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche breakdown; sets upper limit for bus voltage in buck converters or half-bridge legs.
R_DS(on) (typ/max)	4.6 / 5.3 mΩ @ V_GS = 10 V, I_D = 101 A - Directly determines I²R conduction loss and thermal rise in continuous high-current paths.
I_D (T_C = 25°C)	131 A - Continuous safe operating current with adequate heatsinking; defines minimum trace width and PCB copper area requirements.
E_AS	590 mJ - Single-pulse avalanche energy rating; enables reliable unclamped inductive switching without failure in motor control or relay driving.
Q_g	170–260 nC - Total gate charge affecting driver IC selection, gate resistor sizing, and switching loss trade-offs above 50 kHz.
t_r/t_f	190 / 110 ns - Rise/fall times measured at V_DD = 38 V, I_D = 110 A; constrains EMI filter design and snubber component values.
R_θJC	0.75 °C/W - Junction-to-case thermal resistance; used to calculate ΔT_J = P_D × R_θJC for heatsink interface design.

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated tab (drain-connected). Requires 1.1 N·m mounting torque on M3 screw and 300°C soldering tolerance at 1.6 mm from case edge.

Pin/Terminal	Circuit Role	Design Meaning
Tab (exposed pad)	Drain (D)	Primary current-carrying terminal and thermal path to heatsink; electrically connected to drain; must be insulated if floating heatsink used.
Lead 1	Source (S)	Return path for load current; connects to power ground plane; carries full load current and body diode reverse recovery current.
Lead 2	Gate (G)	Control input; high-impedance node requiring low-inductance routing and gate resistor (typically 10–47 Ω) to damp oscillation and limit peak current.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.6 mΩ typ at 10 V drive - reduces conduction losses by >30% vs. legacy 55 V MOSFETs in 48 V telecom rectifiers.
175°C rated junction	Enables operation in sealed enclosures or high ambient environments (e.g., industrial motor drives at 85°C ambient) without derating.
Repetitive avalanche rated	Supported up to T_jmax - allows safe operation during transient overloads in UPS inverters without external clamping circuits.
Fast body diode	t_rr = 88–130 ns, Q_rr = 250–380 nC - minimizes shoot-through risk and recovery loss in synchronous rectification and H-bridge freewheeling.

Applications

Industrial Motor Drive

Uninterruptible Power Supply (UPS)

Use Scenario: Three-phase inverter stage driving 5–10 kW AC induction motors in HVAC compressors.

IC Role / Device Role / Timing Role: High-side/low-side power switch in IGBT replacement topology; handles 100 A peak phase current with <100 ns dead-time margin.

Use Value: 5.3 mΩ R_DS(on) limits conduction loss to <5.3 W per device at 100 A, reducing heatsink size by 35% vs. 8 mΩ alternatives.

Use Scenario: Bidirectional DC-AC inverter in line-interactive UPS with battery backup.

IC Role / Device Role / Timing Role: Synchronous rectifier and inverter switch; conducts battery discharge current and grid-synchronized AC output current.

Use Value: 590 mJ E_AS withstands transformer leakage inductance spikes during transfer switching, eliminating need for external TVS.

DC-DC Converter (48 V Input)

Electric Vehicle Onboard Charger (OBC)

Use Scenario: Primary-side switch in 3.3 kW isolated LLC resonant converter for server PSUs.

IC Role / Device Role / Timing Role: High-frequency (200–500 kHz) hard-switched primary FET; operates with zero-voltage switching assist.

Use Value: 260 nC max Q_g enables gate drive with <2 W loss using UCC27611 driver, maintaining >96% efficiency at full load.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW OBC AC/DC stage.

IC Role / Device Role / Timing Role: Low-side rectifying switch replacing Schottky diodes; commutated by controller with adaptive timing.

Use Value: 1.3 V V_SD at 101 A cuts forward drop by 40% vs. 2.2 V SiC Schottky, reducing rectifier loss by 18 W per phase.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP130N5F6	60 V V_DSS, 4.5 mΩ R_DS(on), 130 A I_D, D²PAK package, no specified E_AS rating	Lacks documented avalanche energy spec; requires external clamping in inductive switching	Preferable where higher V_DSS margin is needed but avalanche robustness is not critical
IXTH120N50L2	500 V V_DSS, 12 mΩ R_DS(on), TO-247 package, 1000 mJ E_AS	Higher voltage rating and larger package increase layout area and thermal mass; unsuitable for 48 V systems	Only suitable when system bus exceeds 100 V or extreme avalanche immunity is mandatory

Compared with STP130N5F6 and IXTH120N50L2, the IRF1405S delivers optimal balance of low R_DS(on), proven avalanche ruggedness, and D2PAK footprint-making it preferred for 48–60 V industrial and energy storage applications where space, thermal performance, and reliability are co-constrained.

Availability

IRF1405S is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRF1405S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF1405S belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in demanding power conversion and motor control applications.

FAQ

Is IRF1405S suitable for gate drive with 5 V microcontrollers?

No. The IRF1405S has a gate threshold voltage range of 2.0–4.0 V, but its R_DS(on) is only guaranteed at V_GS = 10 V. At 5 V, R_DS(on) rises sharply (>20 mΩ), increasing conduction loss and thermal stress. A gate driver or level shifter is required to deliver ≥10 V to ensure full enhancement.

What is the maximum recommended PCB copper area for thermal relief in continuous 100 A operation?

For sustained 100 A operation at T_C = 100°C, a minimum of 400 cm² of 2 oz copper (with thermal vias to inner layers) is recommended. This assumes 0.75°C/W R_θJC, 1.5°C/W board-to-ambient resistance, and ≤25°C ambient rise. Thermal simulation using the provided Z_thJC curve is advised for precise layout validation.

Does IRF1405S have lead-free and RoHS-compliant variants?

Yes. The IRF1405SPbF designation indicates lead-free and RoHS-compliant construction. It uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3), with floor life of 168 hours at ≤30°C/60% RH prior to reflow.

Can IRF1405S replace IRF1404 in existing designs?

Yes, with verification. The IRF1405S offers lower R_DS(on) (5.3 mΩ vs. 6.8 mΩ), higher I_D (131 A vs. 120 A), and improved E_AS (590 mJ vs. 470 mJ), all in identical D2PAK packaging. Layout and gate drive remain compatible, but thermal and switching loss reductions require updated thermal modeling and potential gate resistor adjustment.

IRF1405S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 131A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.3mOhm @ 101A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 260 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1405S FAQ

1.How can I place an order for IRF1405S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1405S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1405S reliable?

The price and inventory of IRF1405S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1405S is usually 5 days.

3.What payment methods are accepted for IRF1405S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1405S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1405S?

IRF1405S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1405S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1405S?

For technical support, including IRF1405S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1405S requirements.

6.How does Aetrix verify that IRF1405S is sourced from the original manufacturer or authorized distributors?

All IRF1405S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1405S meets industry standards.

7.What is the process for return or replacement of IRF1405S?

All IRF1405S units undergo pre-shipment inspection (PSI). If there is an issue with IRF1405S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1405S part is unused and in its original packaging.

Return procedure for IRF1405S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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