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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1405SPBF

Name: IRF1405SPBF
Brand: Infineon Technologies
SKU: IRF1405SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1405SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1405SPBF.pdf

Description:: MOSFET N-CH 55V 131A D2PAK

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Product details

Overview

IRF1405SPBF from Infineon Technologies (formerly International Rectifier) is a 55V, 131A N-channel D2Pak MOSFET optimized for high-current DC-DC conversion and motor drive switching. It features 4.6 mΩ typical R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and 590 mJ single-pulse avalanche energy - enabling robust operation in industrial inverters and UPS systems.

For engineers reviewing the IRF1405SPBF datasheet, IRF1405SPBF pinout, IRF1405SPBF application, or IRF1405SPBF equivalent, key selection criteria include its 5.3 mΩ max R_DS(on), 680 A pulsed drain current capability, fast 190 ns rise time, and validated repetitive avalanche performance up to T_Jmax.

Technical Context

This HEXFET® Power MOSFET employs stripe planar processing to achieve ultra-low on-resistance per die area. Its gate charge profile (170–260 nC total) and low C_iss (5480 pF) support high-frequency hard-switching in synchronous rectifiers and half-bridge topologies.

The device integrates an intrinsic body diode with 1.3 V forward voltage at 101 A and 88–130 ns reverse recovery time. Its 5.0 V/ns peak diode recovery dv/dt rating and 1.3 W/°C linear derating factor ensure stable operation under transient overloads and thermal cycling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V bus systems.
R_DS(on) max	5.3 mΩ at V_GS = 10 V, I_D = 101 A - Directly determines conduction loss (P_cond ≈ I² × 5.3 mΩ) in high-current paths.
I_D @ 25°C	131 A continuous - Enables single-device use in 3 kW motor drives without parallelization.
E_AS	590 mJ single-pulse - Quantifies energy-handling capacity during unclamped inductive turn-off events.
t_r / t_f	190 ns / 110 ns - Defines minimum practical switching period (≈ 300 ns) for >1 MHz SMPS designs.
R_θJC	0.75 °C/W - Enables 200 W power dissipation with ≤150°C case-to-junction delta; critical for heatsink sizing.
Q_g	170–260 nC - Determines gate driver current requirement (e.g., 2.6 A avg for 100 ns turn-on).

Pinout & Package

IRF1405SPBF uses the surface-mount D2Pak (TO-262) package with isolated tab. Thermal pad is electrically connected to the drain terminal and must be soldered to a PCB copper pour for optimal heat transfer and electrical isolation.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain connection	Electrically tied to internal die drain; serves as primary thermal path and high-current output node.
Lead 1 (Source)	Power source reference	Low-inductance return path for load current; connects to PCB ground plane or source rail.
Lead 2 (Gate)	Control input	High-impedance MOS control node requiring <200 nA leakage handling; sensitive to ESD and ringing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.6 mΩ typ. at 10 V gate drive - reduces conduction losses by >30% vs. legacy 55 V MOSFETs in 100 A applications.
175°C rated junction	Extended thermal margin enables operation in sealed enclosures or high-ambient environments without derating.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_Jmax - eliminates need for external snubbers in motor phase-legs.
Fast body diode	88–130 ns t_rr, 250–380 nC Q_rr - minimizes commutation loss and voltage overshoot in synchronous rectification.
Dynamic dv/dt immunity	5.0 V/ns rated - suppresses false turn-on during high dV/dt transients in bridge configurations.

Applications

Industrial Motor Drive

Uninterruptible Power Supply (UPS)

Use Scenario: Three-phase inverter stage driving 2–5 kW AC induction motors in HVAC compressors.

IC Role / Device Role / Timing Role: High-side/low-side switch in IGBT replacement topology; handles 101 A continuous phase current.

Use Value: 5.3 mΩ R_DS(on) cuts conduction loss by 4.2 W per device vs. 8 mΩ alternatives, reducing heatsink size by 35%.

Use Scenario: Bidirectional DC-AC inverter in online double-conversion UPS with 48 V battery input.

IC Role / Device Role / Timing Role: Synchronous rectifier in LLC resonant converter output stage; switches at 200–500 kHz.

Use Value: 190 ns rise time supports efficient zero-voltage switching (ZVS), lowering EMI and improving efficiency above 95%.

Solar Microinverter

DC Fast Charging Module

Use Scenario: Full-bridge DC-AC stage converting 30–60 V PV string output to 230 VAC grid interface.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge; subjected to repetitive 100 A pulsed currents and 55 V bus transients.

Use Value: 590 mJ E_AS withstands lightning-induced surges without failure, eliminating need for TVS clamping.

Use Scenario: Isolated DC-DC stage stepping 400 V battery bus down to 12 V auxiliary supply in EV charging stations.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge; operates at 100 kHz with 680 A peak pulse current.

Use Value: 0.75 °C/W R_θJC allows 200 W dissipation with 150°C junction rise, enabling compact 20 mm × 20 mm heatsink footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP130N5F6	55 V, 130 A, 4.8 mΩ R_DS(on), D²PAK package, lower Q_g (140 nC)	Better gate drive efficiency but reduced avalanche energy (320 mJ vs. 590 mJ)	Preferred where gate drive loss dominates and inductive stress is low.
IXTH120N50L2	500 V, 120 A, 12 mΩ R_DS(on), TO-247 package, higher voltage rating	Higher V_DSS enables 400 V bus use but 2.3× higher conduction loss at 48 V	Only suitable when system requires >100 V blocking; not drop-in for 55 V designs.

Compared with STP130N5F6 and IXTH120N50L2, IRF1405SPBF delivers superior avalanche ruggedness and lower conduction loss at 48–55 V, making it optimal for cost-sensitive, thermally constrained industrial motor drives where reliability under fault conditions is critical.

Availability

IRF1405SPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar microinverters requiring stable component supply and long-term production continuity.

Supply support for IRF1405SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion - designed specifically for motor control, renewable energy inverters, and server/telecom power supplies demanding low R_DS(on) and rugged avalanche performance.

FAQ

What is the maximum gate-to-source voltage for IRF1405SPBF?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is +10 V to +15 V for full enhancement and -5 V to -10 V for fast turn-off; gate resistors should limit peak current to avoid ringing while maintaining <200 ns switching transitions.

Does IRF1405SPBF require a heatsink in 131 A continuous operation?

Yes - at 131 A and 4.6 mΩ R_DS(on), conduction loss exceeds 78 W. With R_θJC = 0.75 °C/W, even with ideal case cooling, junction temperature would exceed 175°C without additional heatsinking. A forced-air-cooled aluminum heatsink with ≥0.2 °C/W thermal resistance is required for sustained 131 A operation.

Can IRF1405SPBF replace IRF1404 in existing designs?

Yes - both are D2Pak 55 V N-channel MOSFETs with identical pinout and footprint. IRF1405SPBF offers 15% lower R_DS(on) (5.3 mΩ vs. 6.0 mΩ) and higher 131 A rating (vs. 120 A), delivering measurable efficiency gain and thermal margin improvement without layout changes.

Is the body diode of IRF1405SPBF suitable for synchronous rectification?

Yes - its 1.3 V V_SD at 101 A and 88–130 ns t_rr enable efficient synchronous rectification in DC-DC converters up to 500 kHz. However, Q_rr (250–380 nC) requires careful gate timing to avoid cross-conduction; dead-time must exceed 200 ns to prevent shoot-through in half-bridge configurations.

IRF1405SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 131A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.3mOhm @ 101A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 260 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1405SPBF FAQ

1.How can I place an order for IRF1405SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1405SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1405SPBF reliable?

The price and inventory of IRF1405SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1405SPBF is usually 5 days.

3.What payment methods are accepted for IRF1405SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1405SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1405SPBF?

IRF1405SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1405SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1405SPBF?

For technical support, including IRF1405SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1405SPBF requirements.

6.How does Aetrix verify that IRF1405SPBF is sourced from the original manufacturer or authorized distributors?

All IRF1405SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1405SPBF meets industry standards.

7.What is the process for return or replacement of IRF1405SPBF?

All IRF1405SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1405SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1405SPBF part is unused and in its original packaging.

Return procedure for IRF1405SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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