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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1405STRRPBF

Name: IRF1405STRRPBF
Brand: Infineon Technologies
SKU: IRF1405STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1405STRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1405STRRPBF.pdf

Description:: MOSFET N-CH 55V 131A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1405STRRPBF from Infineon Technologies is a 55 V, 131 A N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, featuring 4.6 mΩ typical R_DS(on) at V_GS = 10 V, 175 °C maximum junction temperature, and 590 mJ single-pulse avalanche energy - deployed in high-current DC motor drives and industrial power inverters.

For engineers reviewing the IRF1405STRRPBF datasheet, IRF1405STRRPBF pinout, IRF1405STRRPBF application, or IRF1405STRRPBF equivalent, key selection criteria include continuous drain current derating above 25 °C, gate charge (170–260 nC), diode reverse recovery time (88–130 ns), and thermal resistance (0.75 °C/W junction-to-case).

Technical Context

This MOSFET employs stripe planar silicon processing to achieve ultra-low on-resistance per die area while sustaining repetitive avalanche operation up to T_jmax = 175 °C. Its dynamic dv/dt rating of 5.0 V/ns and fast switching (t_r = 190 ns, t_f = 110 ns) support hard-switched topologies with minimal voltage overshoot.

The integrated body diode exhibits V_SD = 1.3 V at I_S = 101 A and T_J = 25 °C, with Q_rr = 250–380 nC and trr = 88–130 ns under di/dt = 100 A/µs - enabling efficient freewheeling in synchronous rectification and H-bridge motor control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V bus systems.
R_DS(on)	4.6 mΩ (typ) @ V_GS = 10 V, I_D = 101 A - Enables <1.5 W conduction loss at 100 A, critical for thermal management in compact heatsinks.
I_D @ T_C = 25 °C	131 A - Continuous current capability with case-mounted heatsink; sets baseline for parallel device sizing.
E_AS	590 mJ - Single-pulse avalanche energy; supports unclamped inductive turn-off without failure in motor phase-legs.
Q_g	170–260 nC - Total gate charge determines driver strength requirement; impacts switching loss and gate drive IC selection.
R_θJC	0.75 °C/W - Junction-to-case thermal resistance; enables precise junction temperature estimation using measured case temperature.
t_rr	88–130 ns - Body diode reverse recovery time; directly affects commutation losses and EMI in bridge configurations.

Pinout & Package

IRF1405STRRPBF uses the surface-mount D2PAK (TO-263) package with exposed drain pad for low-inductance, high-current PCB mounting and thermal conduction to copper planes or heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Exposed metal tab electrically connected to drain; must be soldered to large copper pour or heatsink for thermal and electrical performance.
Source	Reference node for gate drive and current sensing	Low-inductance source connection essential for stable gate control and accurate shunt-based current monitoring.
Gate	Control input for channel conduction	High-impedance terminal requiring <20 V absolute max; sensitive to ESD and ringing; needs local RC snubber in high-dI/dt layouts.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.6 mΩ typ at 10 V gate drive - reduces conduction loss by >30% vs. legacy 55 V MOSFETs in same package.
175 °C rated junction temperature	Enables operation in sealed enclosures or high ambient environments without derating beyond datasheet curves.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_jmax, eliminating need for external clamping in many motor drive designs.
Fast body diode recovery	trr = 88–130 ns with Q_rr = 250–380 nC - minimizes cross-conduction loss and voltage spikes during synchronous rectification.

Applications

Industrial Motor Drive

DC-DC Boost Converter

Use Scenario: High-current H-bridge for 48 V BLDC motor control in automated guided vehicles.

IC Role / Device Role / Timing Role: Main switching element in low-side and high-side legs; handles bidirectional current up to 131 A peak.

Use Value: Low R_DS(on) and robust avalanche rating eliminate external snubbers and reduce heatsink mass by 40%.

Use Scenario: 3 kW isolated boost stage in solar microinverter front-end.

IC Role / Device Role / Timing Role: Primary switch in hard-switched boost topology operating at 50 kHz with 100 A inductor current ripple.

Use Value: 590 mJ E_AS withstands turn-off overvoltage from leakage inductance without failure across full temperature range.

Uninterruptible Power Supply

Welding Inverter Output Stage

Use Scenario: Battery-fed DC link switching in 5 kVA online UPS with active PFC and inverter stages.

IC Role / Device Role / Timing Role: Output stage switch handling 100 A continuous load current with 680 A pulsed surge capability.

Use Value: 680 A pulsed drain current rating supports short-circuit ride-through during grid fault conditions.

Use Scenario: Primary-side IGBT replacement in 20 kHz arc welding inverter output bridge.

IC Role / Device Role / Timing Role: Fast-switching power switch managing 120 A DC output with forced-air cooling.

Use Value: 190 ns rise time and 110 ns fall time enable precise arc current regulation with minimal switching loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 55 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP130N55M6	R_DS(on) = 4.2 mΩ (typ), Q_g = 145 nC, T_jmax = 175 °C, D²PAK package	Lower gate charge reduces driver loss but slightly lower avalanche energy (480 mJ vs. 590 mJ)	Preferred where gate drive efficiency dominates over unclamped inductive stress margin.
IXTH120N55L2	R_DS(on) = 4.8 mΩ (typ), Q_g = 220 nC, T_jmax = 175 °C, TO-247 package	Through-hole TO-247 offers higher thermal mass but larger footprint and no exposed drain pad	Chosen when mechanical robustness and manual assembly outweigh surface-mount density requirements.

Compared with STP130N55M6 and IXTH120N55L2, IRF1405STRRPBF delivers the highest single-pulse avalanche energy among D2PAK 55 V MOSFETs and balances low R_DS(on) with moderate Q_g, making it optimal for cost-sensitive, thermally constrained industrial motor drives.

Availability

IRF1405STRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC boost converters, uninterruptible power supplies, and welding inverter output stages requiring stable component supply and long-term production continuity.

Supply support for IRF1405STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in demanding industrial power conversion and motor control applications.

FAQ

What is the maximum gate-to-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V. Operation beyond ±20 V risks irreversible gate oxide damage. Recommended gate drive is +10 V to +15 V for full enhancement and –5 V to –10 V for fast turn-off; sustained gate voltage above +20 V or below –20 V must be avoided even transiently.

Can IRF1405STRRPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (0.057 V/°C breakdown voltage tempco) ensures inherent current sharing. Successful parallel operation requires matched gate drive layout, symmetrical PCB traces, and individual gate resistors (10–22 Ω) to suppress oscillation and ensure simultaneous switching.

Is the body diode suitable for continuous freewheeling?

Yes - the integrated p-n junction body diode supports continuous forward current up to 131 A (limited by package thermal capacity) and pulsed current up to 680 A. Its V_SD = 1.3 V at 101 A and T_J = 25 °C, with trr = 88–130 ns, makes it viable for non-synchronous rectification in medium-frequency inverters.

What is the recommended PCB layout for thermal performance?

Maximize copper area under the exposed drain tab using ≥2 oz copper and multiple thermal vias (≥12 × 0.3 mm) to inner-layer ground or dedicated thermal plane. Keep gate and source traces short and wide; place gate resistor and bypass capacitor within 5 mm of the package. Avoid routing high-dI/dt paths near gate loops to prevent coupling-induced false turn-on.

IRF1405STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 131A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.3mOhm @ 101A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 260 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1405STRRPBF FAQ

1.How can I place an order for IRF1405STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1405STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1405STRRPBF reliable?

The price and inventory of IRF1405STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1405STRRPBF is usually 5 days.

3.What payment methods are accepted for IRF1405STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1405STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1405STRRPBF?

IRF1405STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1405STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1405STRRPBF?

For technical support, including IRF1405STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1405STRRPBF requirements.

6.How does Aetrix verify that IRF1405STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF1405STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1405STRRPBF meets industry standards.

7.What is the process for return or replacement of IRF1405STRRPBF?

All IRF1405STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1405STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1405STRRPBF part is unused and in its original packaging.

Return procedure for IRF1405STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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