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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1405Z

Name: IRF1405Z
Brand: Infineon Technologies
SKU: IRF1405Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1405Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF1405Z.pdf

Description:: MOSFET N-CH 55V 75A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1405Z from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 (I²PAK) package, rated for 55V V_DSS, 4.9mΩ R_DS(on) at V_GS = 10V, and 75A continuous drain current at T_C = 25°C. It features 175°C junction temperature rating, fast switching (t_r = 110ns, t_f = 82ns), and tested repetitive avalanche capability up to I_AS = 75A - designed for high-efficiency DC-DC converters and automotive power distribution modules.

For engineers reviewing the IRF1405Z datasheet, IRF1405Z pinout, IRF1405Z application, or IRF1405Z equivalent, key selection criteria include its low conduction loss at high current, thermal robustness under transient overload, body diode recovery performance (t_rr = 30–46ns, Q_rr = 30–45nC), and validated avalanche energy (E_AS = 150mJ, tested).

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per die area while maintaining ruggedness. Its gate charge profile (Q_g = 120–180nC, Q_gd = 46nC) supports efficient hard-switching in synchronous buck topologies with moderate gate drive strength.

The integral body diode exhibits low forward voltage (V_SD ≤ 1.3V at 75A) and tightly controlled reverse recovery (Q_rr, t_rr), enabling reliable operation in freewheeling paths without external Schottky supplementation in 12V/24V automotive systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - Maximum blocking voltage in automotive 42V nominal or 24V battery-supplied systems with load dump margin.
R_DS(on)	4.9mΩ max @ V_GS = 10V - Enables <1.2W conduction loss at 75A, reducing heatsink requirements in space-constrained modules.
I_D (continuous)	75A @ T_C = 25°C - Sustains peak motor drive or solenoid current without derating in forced-air-cooled enclosures.
T_J max	175°C - Supports operation in under-hood environments where ambient exceeds 105°C and thermal transients occur.
E_AS	150mJ (tested) - Withstands unclamped inductive switching events in relay drivers or actuator control without failure.
t_r/t_f	110ns / 82ns - Limits switching losses to <1.8mJ per transition at 100kHz, enabling >95% efficiency in high-frequency SMPS.
Q_rr	30–45nC - Reduces diode-induced shoot-through risk and EMI during commutation in half-bridge configurations.

Pinout & Package

IRF1405Z uses a 3-pin TO-262 (I²PAK) package with isolated tab. The case is electrically connected to the Drain terminal, requiring insulating mounting hardware when mounted to grounded heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	High-current output node; thermally coupled to heatsink; must be insulated if heatsink is grounded.
Source	Reference node for gate drive and current sensing	Low-side return path; used for current-sense resistor placement and gate driver reference.
Gate	Control input for channel conduction	High-impedance MOS control terminal; requires 10V drive for full enhancement; sensitive to ESD.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.9mΩ enables <1.2W conduction loss at 75A, minimizing thermal design burden in high-current automotive modules.
175°C junction rating	Allows sustained operation in under-hood environments where ambient reaches 105°C and transient spikes exceed 150°C.
Tested repetitive avalanche	Validated to 75A I_AS and 150mJ E_AS, supporting robustness against inductive kickback in solenoid and motor control.
Fast body diode recovery	t_rr = 30–46ns and Q_rr = 30–45nC reduce switching noise and cross-conduction risk in synchronous rectification.

Applications

Automotive DC-DC Converters

Engine Control Unit (ECU) Power Stages

Use Scenario: Step-down conversion from 24V battery to 5V/3.3V logic rails in commercial vehicle ECUs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–500kHz with tight duty-cycle control.

Use Value: 4.9mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 7.5mΩ MOSFETs, improving thermal margin at 75A peak load.

Use Scenario: Driving fuel injector solenoids and ignition coils in gasoline/diesel engine management systems.

IC Role / Device Role / Timing Role: Low-side switch controlling inductive loads with fast turn-off to limit back-EMF stress.

Use Value: 175°C T_J rating and 150mJ E_AS ensure reliability during repeated 75A inductive turn-off events at elevated under-hood temperatures.

12V/24V Battery Protection Circuits

Industrial Motor Starter Modules

Use Scenario: Reverse polarity and overcurrent protection in auxiliary power distribution units (PDUs) for off-highway equipment.

IC Role / Device Role / Timing Role: Bidirectional current-sensing switch using integrated body diode for reverse-current blocking.

Use Value: Low V_SD (≤1.3V) minimizes forward drop during reverse-battery fault, limiting power dissipation to <100W at 75A.

Use Scenario: Soft-start and stall-protection switching in 3-phase BLDC motor controllers for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Phase-leg low-side switch handling 75A continuous and 600A pulsed current during startup surges.

Use Value: Repetitive avalanche rating allows safe clamping of 600A surge currents without external snubbers, simplifying PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF55	55V V_DSS, 6.5mΩ R_DS(on), TO-220 package, no avalanche rating specified	Lacks validated repetitive avalanche testing; higher R_DS(on) increases conduction loss by ~33% at 75A	Acceptable for non-critical 24V industrial loads where thermal margin exists and inductive transients are suppressed externally.
IXTH75N10L2	100V V_DSS, 8.5mΩ R_DS(on), TO-247 package, 175°C rating, avalanche-rated	Higher voltage rating adds cost and capacitance; slower switching (t_r = 150ns) increases switching loss	Preferred only when system-level voltage transients exceed 55V or when TO-247 mechanical retention is required.

Compared with STP75NF55 and IXTH75N10L2, IRF1405Z delivers optimal balance of low R_DS(on), proven avalanche ruggedness, and TO-262 thermal interface - making it the preferred choice for automotive-grade 24V power stages where efficiency, reliability, and package compatibility are jointly constrained.

Availability

IRF1405Z is available at Aetrix Electronics and suitable for automotive DC-DC converters, engine control unit (ECU) power stages, and 12V/24V battery protection circuits requiring stable component supply across extended production lifecycles.

Supply support for IRF1405Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with deep expertise in silicon-based power devices.

The IRF1405Z belongs to Infineon's HEXFET® automotive-qualified power MOSFET product line, engineered specifically for high-reliability 12V/24V/42V vehicle subsystems demanding low-loss switching, thermal resilience, and ruggedness against electrical transients.

FAQ

What is the maximum gate-source voltage rating for IRF1405Z?

The absolute maximum V_GS is ±20V. Operation beyond ±20V risks permanent gate oxide damage. Recommended gate drive is +10V to fully enhance the channel with margin, and –5V to –10V for fast turn-off in high-noise environments. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during switching transients.

Does IRF1405Z require a heatsink in typical automotive applications?

Yes - even at 75A continuous current, junction-to-case thermal resistance is 0.65°C/W. With 1.2W conduction loss and 25°C ambient, a heatsink with ≤15°C/W junction-to-ambient resistance is required to maintain T_J ≤ 175°C. Mounting to a 100cm² aluminum plate with thermal grease achieves ~12°C/W, satisfying this requirement.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD ≤ 1.3V at 75A and t_rr = 30–46ns - higher forward drop than 0.5V Schottkys but lower reverse recovery charge (Q_rr = 30–45nC) than many fast recovery diodes. It eliminates component count and layout complexity in freewheeling paths where moderate efficiency is acceptable.

Is IRF1405Z compliant with AEC-Q101 for automotive use?

Yes - IRF1405Z is AEC-Q101 qualified per manufacturer documentation (Infineon datasheet PD-94645A Rev. C). Qualification includes HTOL, temperature cycling, HTRB, and ESD testing to ensure reliability in automotive under-hood environments with junction temperatures up to 175°C.

IRF1405Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4780 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF1405Z FAQ

1.How can I place an order for IRF1405Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1405Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1405Z reliable?

The price and inventory of IRF1405Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1405Z is usually 5 days.

3.What payment methods are accepted for IRF1405Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1405Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1405Z?

IRF1405Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1405Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1405Z?

For technical support, including IRF1405Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1405Z requirements.

6.How does Aetrix verify that IRF1405Z is sourced from the original manufacturer or authorized distributors?

All IRF1405Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1405Z meets industry standards.

7.What is the process for return or replacement of IRF1405Z?

All IRF1405Z units undergo pre-shipment inspection (PSI). If there is an issue with IRF1405Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1405Z part is unused and in its original packaging.

Return procedure for IRF1405Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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