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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1405ZL

Name: IRF1405ZL
Brand: Infineon Technologies
SKU: IRF1405ZL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1405ZL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF1405ZL.pdf

Description:: MOSFET N-CH 55V 75A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:4,419

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Product details

Overview

IRF1405ZL from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 (I²PAK) package, rated for 55 V V_DSS, 4.9 mΩ R_DS(on) at V_GS = 10 V, and 75 A continuous drain current at T_C = 25°C. Designed specifically for automotive power switching, it supports 175°C junction operation, fast switching (t_d(off) = 48 ns), and tested repetitive avalanche energy up to 150 mJ.

For engineers reviewing the IRF1405ZL datasheet, IRF1405ZL pinout, IRF1405ZL application, or IRF1405ZL equivalent, key selection criteria include low conduction loss in 12 V/24 V automotive systems, thermal robustness under pulsed load conditions, body diode recovery performance (t_rr = 30–46 ns), and compatibility with standard gate drivers delivering ≥10 V.

Technical Context

This MOSFET employs advanced silicon processing to minimize R_DS(on) per die area while maintaining high avalanche ruggedness. Its integral body diode exhibits low forward voltage (V_SD ≤ 1.3 V at 75 A) and controlled reverse recovery charge (Q_rr = 30–45 nC), enabling reliable operation in synchronous rectification and inductive load switching.

The device features a thermally optimized TO-262 package with low R_θJC = 0.65°C/W, supporting high-power density designs. Gate charge parameters (Q_g = 120–180 nC, Q_gd = 46 nC) indicate moderate drive strength requirements, suitable for discrete gate drivers or microcontroller-based PWM control with external buffer stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with transient suppression margin.
R_DS(on)	4.9 mΩ max @ V_GS = 10 V - Enables ≤3.7 W conduction loss at 75 A, critical for high-efficiency motor drives and DC-DC converters.
I_D (continuous)	75 A @ T_C = 25°C - Sustains peak load currents in starter solenoid, fan, or pump drivers without derating at moderate heatsink temperatures.
E_AS	150 mJ (tested) - Withstands unclamped inductive switching events in relay/snubberless circuits without failure.
t_rr	30–46 ns - Limits switching losses and EMI during body diode commutation in half-bridge topologies.
T_J max	175°C - Supports operation in engine bay environments with minimal thermal margin degradation over lifetime.
Q_g	120–180 nC - Requires ~1.8–2.7 µC gate drive charge per switch cycle, dictating driver output current capability.

Pinout & Package

IRF1405ZL uses the TO-262 (I²PAK) package: 3-pin, single-ended, surface-mount compatible with through-hole heatsinking. The case is electrically connected to the Drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side current path	Connected to heatsink; carries full load current and must be isolated from PCB ground unless system design requires common-source configuration.
Source (S)	Return path for load current	Reference node for gate drive; internal bond wires contribute LS = 7.5 nH, affecting high-di/dt ringing.
Gate (G)	Control electrode	High-impedance input requiring low-inductance routing; Miller capacitance C_rss = 410 pF influences dv/dt-induced turn-on risk.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.9 mΩ enables <1.5 W conduction loss at 55 A, reducing heatsink size in space-constrained automotive modules.
175°C junction rating	Validated operation up to 175°C allows direct mounting near hot zones (e.g., under-hood ECUs) without thermal throttling.
Repetitive avalanche capability	Tested to 150 mJ per pulse ensures reliability in inductive load switching without external snubbers.
Fast body diode recovery	t_rr = 30–46 ns and Q_rr = 30–45 nC reduce cross-conduction losses and EMI in synchronous buck or H-bridge configurations.
Low gate charge asymmetry	Q_gs/Q_gd ratio ≈ 0.67 improves controllability during Miller plateau transition, easing gate driver selection.

Applications

Automotive Starter Solenoid Control

DC Motor Drive for HVAC Blower

Use Scenario: High-current switching of 12 V starter solenoid coils (≥50 A peak) in cold-cranking conditions.

IC Role / Device Role / Timing Role: Main power switch handling inrush current and sustained hold current with minimal voltage drop.

Use Value: 4.9 mΩ R_DS(on) limits solenoid coil voltage drop to <0.4 V at 75 A, ensuring reliable engagement even at low battery voltage (≤9 V).

Use Scenario: PWM-controlled 24 V blower motor in commercial vehicle HVAC systems operating continuously at 40–60 A.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology with integrated freewheeling diode conduction.

Use Value: 175°C T_J rating and 150 mJ E_AS withstand repeated stall events and thermal cycling without parameter drift.

Engine Cooling Fan Driver

Truck ABS Modulator Valve Control

Use Scenario: Variable-speed radiator fan control using 10–20 kHz PWM in ambient temperatures up to 125°C.

IC Role / Device Role / Timing Role: High-efficiency power stage with fast switching (t_f = 82 ns) to minimize PWM dead-time losses.

Use Value: C_oss = 770 pF and Q_gd = 46 nC enable clean turn-off with minimal shoot-through risk when paired with matched high-side FET.

Use Scenario: Pulse-width modulated solenoid actuation for hydraulic pressure modulation in heavy-duty ABS systems.

IC Role / Device Role / Timing Role: Precision current sink controlling valve coil current with fast turn-off (t_d(off) = 48 ns) to meet ISO 11898 timing constraints.

Use Value: Repetitive avalanche rating allows safe operation during coil flyback without external clamping diodes, simplifying PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF55	R_DS(on) = 6.5 mΩ, V_DSS = 55 V, TO-220 package, R_θJC = 0.8°C/W	Higher conduction loss and thermal resistance limit continuous current to 60 A at same T_C.	Preferred where cost sensitivity outweighs thermal performance and board space permits larger heatsink.
IXTH75N10L2	R_DS(on) = 5.2 mΩ, V_DSS = 100 V, TO-247 package, avalanche rated to 220 mJ	Higher voltage rating adds margin for 48 V systems but increases gate charge (Q_g = 220 nC).	Selected when future-proofing for higher bus voltages or demanding avalanche stress profiles beyond automotive spec.

Compared with STP75NF55 and IXTH75N10L2, IRF1405ZL delivers optimal balance of low R_DS(on), proven automotive qualification, and compact TO-262 footprint-making it ideal for volume production in 12 V/24 V powertrain and chassis modules where thermal density and reliability are prioritized.

Availability

IRF1405ZL is available at Aetrix Electronics and suitable for automotive starter control, HVAC blower drives, engine cooling fan regulation, and ABS modulator valve actuation requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for IRF1405ZL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with deep expertise in silicon and wide-bandgap device development.

The IRF1405ZL belongs to Infineon's legacy HEXFET® automotive-qualified power MOSFET family, engineered for high-reliability switching in harsh under-hood environments with emphasis on avalanche ruggedness, thermal stability, and low R_DS(on).

FAQ

What is the maximum continuous drain current for IRF1405ZL at 100°C case temperature?

The IRF1405ZL supports 270 A pulsed drain current (I_DM) and 230 A continuous drain current at T_C = 100°C with V_GS = 10 V. This derating reflects thermal limits of the TO-262 package and silicon, not gate drive capability. Actual usable current depends on heatsink efficiency and ambient conditions.

Does IRF1405ZL require a gate resistor for automotive PWM applications?

Yes-a gate resistor (typically 4.7–22 Ω) is required to dampen ringing caused by gate loop inductance and Miller effect. The device's Q_g = 120–180 nC and C_iss = 4780 pF make it sensitive to parasitic oscillation; improper gate termination can cause false turn-on or accelerated wear.

Can IRF1405ZL replace IRF1404 in existing designs?

Yes, with validation: IRF1405ZL offers lower R_DS(on) (4.9 mΩ vs. 5.5 mΩ), identical V_DSS (55 V), and same TO-262 package. However, its higher Q_g (120–180 nC vs. 110 nC) may increase switching losses unless gate drive strength is confirmed.

Is the body diode in IRF1405ZL suitable for synchronous rectification?

No-it is a standard parasitic body diode optimized for freewheeling, not synchronous rectification. Its t_rr = 30–46 ns and Q_rr = 30–45 nC are acceptable for inductive flyback but lack the soft recovery and low Q_rr needed for high-frequency synchronous buck converters.

IRF1405ZL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4780 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF1405ZL FAQ

1.How can I place an order for IRF1405ZL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1405ZL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1405ZL reliable?

The price and inventory of IRF1405ZL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1405ZL is usually 5 days.

3.What payment methods are accepted for IRF1405ZL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1405ZL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1405ZL?

IRF1405ZL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1405ZL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1405ZL?

For technical support, including IRF1405ZL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1405ZL requirements.

6.How does Aetrix verify that IRF1405ZL is sourced from the original manufacturer or authorized distributors?

All IRF1405ZL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1405ZL meets industry standards.

7.What is the process for return or replacement of IRF1405ZL?

All IRF1405ZL units undergo pre-shipment inspection (PSI). If there is an issue with IRF1405ZL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1405ZL part is unused and in its original packaging.

Return procedure for IRF1405ZL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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