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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1405ZL-7PPBF

Name: IRF1405ZL-7PPBF
Brand: Infineon Technologies
SKU: IRF1405ZL-7PPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1405ZL-7PPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7 (Straight Leads)

Datasheet:: IRF1405ZL-7PPBF.pdf

Description:: MOSFET N-CH 55V 120A TO263CA-7

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1405ZL-7PPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-263CA (D²PAK) package, rated for 55 V V_DS, 4.9 mΩ R_DS(on) at V_GS = 10 V, and 120 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 140 ns, t_f = 130 ns), and rated repetitive avalanche capability up to T_jmax. It is used in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF1405ZL-7PPBF datasheet, IRF1405ZL-7PPBF pinout, IRF1405ZL-7PPBF application, or IRF1405ZL-7PPBF equivalent, key selection criteria include on-resistance vs. thermal derating, gate charge (Q_g = 230 nC max), body diode recovery (Q_rr = 240 nC), and SOA limits under unclamped inductive switching.

Technical Context

This MOSFET employs advanced planar silicon processing to minimize conduction loss while maintaining robust avalanche ruggedness. Its low R_DS(on) of 4.9 mΩ and high ID rating enable high-efficiency power stages in 12–48 V systems, with thermal resistance R_θJC = 0.65°C/W enabling high-power operation when mounted on copper-clad PCBs.

The device integrates a co-packaged intrinsic body diode with V_SD = 1.3 V (at I_S = 88 A) and reverse recovery time t_rr = 95 ns, supporting synchronous rectification and hard-switched topologies. Gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, ensuring compatibility with standard 5 V and 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before avalanche; suitable for 48 V nominal bus systems with margin.
R_DS(on)	4.9 mΩ @ V_GS = 10 V - Enables ≤0.6 W conduction loss at 110 A, critical for high-current switch-mode power supplies.
I_D (cont)	120 A @ T_C = 25°C - Requires heatsinking or high-copper PCB area to sustain full current without exceeding 175°C junction limit.
Q_g	230 nC max - Determines gate driver power requirement; ~2.3 W average drive power at 100 kHz and 10 V swing.
E_AS	250 mJ - Single-pulse avalanche energy rating; supports unclamped inductive turn-off in motor control without failure.
t_r/t_f	140 ns / 130 ns - Fast edge rates reduce switching losses but increase EMI risk; requires careful layout and gate resistor tuning.
Q_rr	240 nC - Body diode reverse recovery charge; impacts efficiency and stress in synchronous buck or bridge configurations.

Pinout & Package

IRF1405ZL-7PPBF is housed in a surface-mount TO-263CA (D²PAK) package with 3 terminals: Drain (pins 1–3, tab), Source (pins 4–6), and Gate (pin 7). The exposed drain tab provides low-inductance, high-current path and serves as primary thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 1–3 + Tab)	Main current-carrying terminal, connected to high-side or low-side power rail	Low-inductance parallel connection reduces switching voltage overshoot; tab must be soldered to large copper pour for thermal management.
Source (Pins 4–6)	Reference node for gate drive and current sensing	Multiple pins minimize source inductance (L_S = 7.5 nH); critical for stable gate control during fast dI/dt transitions.
Gate (Pin 7)	Control input for channel conduction	High-impedance input requiring <230 nC charge; sensitive to noise-requires short, shielded trace and local decoupling.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.9 mΩ enables <0.6 W conduction loss at 110 A, reducing thermal load in high-current power stages.
175°C junction rating	Allows operation in harsh environments (e.g., automotive under-hood, industrial motor drives) without derating at ambient ≤100°C.
Repetitive avalanche rated	Validated up to T_jmax per Fig. 15/16; supports reliable unclamped inductive switching in motor phase-legs and solenoid drivers.
Fast switching with low Q_gd	64 nC Miller charge minimizes dv/dt-induced false turn-on; enables >100 kHz operation with moderate gate resistance.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3); compatible with standard lead-free reflow profiles.

Applications

Motor Drive Half-Bridge

High-Current DC-DC Converter

Use Scenario: High-power BLDC motor control in industrial automation, where phase currents exceed 80 A peak.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter leg, conducting during PWM low period.

Use Value: Low R_DS(on) and high I_D reduce conduction loss and thermal stress; avalanche rating handles back-EMF transients during commutation.

Use Scenario: Primary-side synchronous rectifier in 48 V input, 12 V output telecom DC-DC module delivering 100 A.

IC Role / Device Role / Timing Role: High-current, low-V_DS switch in synchronous buck topology, operating at 200 kHz.

Use Value: 4.9 mΩ R_DS(on) cuts conduction loss by >40% vs. older 8 mΩ devices; fast t_r/t_f maintains efficiency at high frequency.

UPS Inverter Stage

Industrial Solenoid Driver

Use Scenario: Bidirectional 55 V battery inverter stage in line-interactive UPS handling 3 kVA loads.

IC Role / Device Role / Timing Role: High-side switch in H-bridge configuration, subjected to bus reversal and regenerative braking.

Use Value: Repetitive avalanche capability absorbs inductive kickback during forced commutation; 175°C rating ensures reliability during overload events.

Use Scenario: High-duty-cycle solenoid actuator driver in factory machinery, cycling at 5 Hz with 100 ms on-time.

IC Role / Device Role / Timing Role: Low-side switch controlling 80 A inductive load; subjected to repeated unclamped turn-off stress.

Use Value: 250 mJ E_AS and validated repetitive avalanche performance eliminate need for external snubbers, simplifying board design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP120N55F7	R_DS(on) = 4.2 mΩ (lower), Q_g = 180 nC (lower), but V_DS = 55 V same; TO-220FP package, not surface-mount.	Lacks D²PAK thermal interface; unsuitable for high-density SMT designs requiring low R_θJA.	Prefer for through-hole legacy designs where lower gate charge and R_DS(on) outweigh thermal packaging constraints.
IXFH120N55X3	R_DS(on) = 4.0 mΩ, Q_g = 205 nC, avalanche-rated, but uses TO-247 package with higher R_θJC = 0.75°C/W.	Higher mounting height and mechanical footprint; less suitable for ultra-thin power modules.	Select when maximum ruggedness and serviceability (socketable TO-247) are prioritized over PCB space and thermal density.

Compared with STP120N55F7 and IXFH120N55X3, IRF1405ZL-7PPBF offers optimal balance of SMT-compatible thermal performance (R_θJC = 0.65°C/W), proven avalanche reliability in D²PAK, and industry-standard pinout-making it preferred for space-constrained, high-reliability industrial power stages.

Availability

IRF1405ZL-7PPBF is available at Aetrix Electronics and suitable for high-current motor drives, telecom DC-DC converters, and industrial UPS inverters requiring stable component supply and long-term manufacturability.

Supply support for IRF1405ZL-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with roots in International Rectifier's pioneering HEXFET® technology.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial, telecom, and motor control applications where ruggedness and thermal performance are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF1405ZL-7PPBF supports 100 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263CA package and requires adequate PCB copper area or heatsink attachment to maintain safe junction temperature.

Does this MOSFET have a built-in body diode, and what are its key parameters?

Yes, it integrates a monolithic body diode with forward voltage V_SD = 1.3 V at I_S = 88 A and reverse recovery charge Q_rr = 240 nC. These values are measured at T_J = 25°C, V_DD = 28 V, and di/dt = 100 A/μs, making it suitable for synchronous rectification but requiring attention to recovery-related losses.

Can IRF1405ZL-7PPBF be used in avalanche mode repeatedly?

Yes-its datasheet explicitly specifies "Repetitive Avalanche Allowed up to T_jmax" and provides curves (Figs. 15–16) for allowable avalanche current vs. pulse width and temperature. Safe operation requires limiting total energy per pulse and ensuring junction temperature stays below 175°C using transient thermal impedance data.

What is the recommended gate resistor value for 100 kHz switching in a half-bridge?

A gate resistor of 5–10 Ω is typical for 100 kHz operation, balancing switching speed and ringing suppression. With Q_g = 230 nC and typical driver output impedance, this yields ~1–2 μs rise/fall times-within safe SOA limits while minimizing EMI. Layout parasitics must be minimized to avoid oscillation.

IRF1405ZL-7PPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-7 (Straight Leads)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 88A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-263CA-7

IRF1405ZL-7PPBF FAQ

1.How can I place an order for IRF1405ZL-7PPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1405ZL-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1405ZL-7PPBF reliable?

The price and inventory of IRF1405ZL-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1405ZL-7PPBF is usually 5 days.

3.What payment methods are accepted for IRF1405ZL-7PPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1405ZL-7PPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1405ZL-7PPBF?

IRF1405ZL-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1405ZL-7PPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1405ZL-7PPBF?

For technical support, including IRF1405ZL-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1405ZL-7PPBF requirements.

6.How does Aetrix verify that IRF1405ZL-7PPBF is sourced from the original manufacturer or authorized distributors?

All IRF1405ZL-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1405ZL-7PPBF meets industry standards.

7.What is the process for return or replacement of IRF1405ZL-7PPBF?

All IRF1405ZL-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1405ZL-7PPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1405ZL-7PPBF part is unused and in its original packaging.

Return procedure for IRF1405ZL-7PPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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