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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1405ZLPBF

Name: IRF1405ZLPBF
Brand: Infineon Technologies
SKU: IRF1405ZLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1405ZLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF1405ZLPBF.pdf

Description:: MOSFET N-CH 55V 75A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1405ZLPBF from Infineon Technologies (formerly International Rectifier) is a 55V, 75A N-channel enhancement-mode Power MOSFET in TO-262 (I²PAK) package, featuring 4.9 mΩ R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and rated for repetitive avalanche energy up to 150 mJ. It serves as a high-current switching element in DC-DC converters, motor drives, and UPS systems.

For engineers reviewing the IRF1405ZLPBF datasheet, IRF1405ZLPBF pinout, IRF1405ZLPBF application, or IRF1405ZLPBF equivalent, key selection criteria include its low on-resistance, fast switching (t_r = 110 ns, t_f = 82 ns), body diode recovery performance (t_rr = 30–46 ns), and thermal robustness under high-pulse-load conditions.

Technical Context

This MOSFET employs advanced HEXFET® silicon processing to minimize conduction losses while maintaining rugged unclamped inductive switching capability. Its design integrates a low-inductance internal structure (L_D = 4.5 nH, L_S = 7.5 nH) and optimized gate charge profile (Q_g = 120–180 nC) for efficient hard-switching operation.

The device supports gate drive with standard 10 V logic-level signals and features a gate threshold voltage range of 2.0–4.0 V. Its body diode exhibits V_SD ≤ 1.3 V at 75 A and controlled reverse recovery (Q_rr = 30–45 nC), enabling reliable synchronous rectification and freewheeling in high-frequency power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V bus applications.
R_DS(on)	4.9 mΩ max @ V_GS = 10 V - Enables <1.5 W conduction loss at 75 A, critical for high-efficiency power stages.
I_D	75 A @ T_C = 25°C - Continuous current rating limited by package thermal resistance (R_θJC = 0.65 °C/W).
Q_g	120–180 nC - Determines gate driver power requirement and switching speed trade-off in PWM control.
t_r/t_f	110 ns / 82 ns - Fast edge rates reduce switching transition losses in 100–500 kHz SMPS designs.
E_AS	150 mJ - Single-pulse avalanche energy rating enables robustness against inductive load transients without external snubbers.
T_J max	175°C - Allows sustained operation in thermally constrained enclosures with derated current above 100°C case temperature.

Pinout & Package

IRF1405ZLPBF uses the TO-262 (I²PAK) surface-mount-compatible package with isolated tab, designed for direct heatsink mounting and high-power dissipation. The package has three terminals: Drain (tab), Source (pins 2 & 3), and Gate (pin 1).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-current output path	Electrically connected to metal tab; requires insulated mounting or heatsink isolation for floating topologies.
Source (Pins 2 & 3)	Reference node for gate drive and current return	Parallel pins reduce source inductance; critical for minimizing voltage spikes during high di/dt switching.
Gate (Pin 1)	Control terminal for channel modulation	High-impedance input requiring low-inductance gate loop layout to prevent oscillation and ensure clean turn-on/turn-off.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.9 mΩ enables <1.5 W conduction loss at full 75 A load, reducing thermal footprint in high-current rails.
Repetitive avalanche rating	Rated for repeated unclamped inductive switching up to T_Jmax, eliminating need for external clamping in motor drive flyback paths.
Fast body diode recovery	t_rr = 30–46 ns and Q_rr = 30–45 nC support high-frequency synchronous rectification without excessive diode loss or EMI.
175°C junction rating	Enables operation in sealed industrial enclosures or automotive under-hood environments with minimal derating.
Low internal inductance	L_D = 4.5 nH and L_S = 7.5 nH minimize voltage overshoot during hard switching, improving system reliability.

Applications

Motor Drive Inverter

Server PSU Primary Switch

Use Scenario: 3-phase BLDC motor inverter stage operating at 20–40 kHz PWM frequency with peak phase current up to 75 A.

IC Role / Device Role / Timing Role: High-side and low-side N-channel switching element handling bidirectional current flow and regenerative braking energy.

Use Value: Low R_DS(on) reduces I²R losses in continuous conduction mode; fast body diode enables zero-voltage switching transitions during commutation.

Use Scenario: Primary-side switch in 80 PLUS Titanium 3 kW server power supply using LLC resonant topology.

IC Role / Device Role / Timing Role: Main power switch conducting high-frequency AC current in half-bridge configuration with 500 kHz fundamental switching.

Use Value: Low Q_g and fast t_r/t_f minimize gate drive loss and transition loss; 175°C rating sustains reliability under high ambient temperatures.

Uninterruptible Power Supply

Industrial DC Bus Protection

Use Scenario: Bidirectional DC-AC inverter stage in online UPS delivering 5 kVA with battery backup and line-interactive regulation.

IC Role / Device Role / Timing Role: Output stage MOSFETs switching at 10–20 kHz to synthesize pure sine-wave AC output from 380 V DC bus.

Use Value: Repetitive avalanche capability absorbs inductive kickback from transformer leakage inductance during fault conditions without failure.

Use Scenario: Solid-state circuit breaker in 48 V DC microgrid distribution panel protecting downstream loads from short-circuit events.

IC Role / Device Role / Timing Role: Current-controlled switch triggered by overcurrent detection to interrupt >100 A fault current within 10 µs.

Use Value: 75 A continuous rating and 600 A pulsed source current (body diode) support high-speed fault clearing with minimal voltage drop during conduction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF55	R_DS(on) = 6.5 mΩ @ 10 V; Q_g = 130 nC; TO-220 package	Higher conduction loss and lower thermal performance due to TO-220 R_θJC = 1.0 °C/W vs. 0.65 °C/W	Select when cost sensitivity outweighs efficiency and thermal margin requirements in lower-power (<2 kW) designs.
IXTH75N10L2	R_DS(on) = 5.2 mΩ @ 10 V; 150°C T_J max; TO-247 package	Lower junction temperature limit and larger footprint; no rated repetitive avalanche	Prefer for ultra-high-reliability linear-regulator or analog bias applications where avalanche immunity is not required.

Compared with STP75NF55 and IXTH75N10L2, IRF1405ZLPBF delivers superior thermal efficiency (0.65 °C/W), guaranteed repetitive avalanche operation, and optimized gate charge for high-frequency switching-making it the preferred choice for compact, high-power-density inverters and SMPS where thermal headroom and transient robustness are critical.

Availability

IRF1405ZLPBF is available at Aetrix Electronics and suitable for motor drives, server power supplies, uninterruptible power systems, and industrial DC bus protection requiring stable component supply and long-term production continuity.

Supply support for IRF1405ZLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

The IRF1405ZLPBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in industrial power conversion, motor control, and energy infrastructure applications.

FAQ

What is the maximum continuous drain current for IRF1405ZLPBF at 100°C case temperature?

The maximum continuous drain current is 270 A at T_C = 25°C and derates linearly to 110 A at T_C = 100°C per the Absolute Maximum Ratings table. This reflects silicon-limited current capacity under ideal heatsinking conditions with R_θJC = 0.65 °C/W.

Does IRF1405ZLPBF support gate drive with 5 V logic-level signals?

No. The gate threshold voltage ranges from 2.0 V to 4.0 V, but the device is specified for R_DS(on) and switching performance only at V_GS = 10 V. Driving at 5 V yields significantly higher on-resistance (>20 mΩ) and unreliable turn-on, making it unsuitable for 5 V logic interfaces without level-shifting.

How does the body diode performance compare to discrete Schottky diodes in high-frequency rectification?

The integrated body diode has V_SD ≤ 1.3 V at 75 A and t_rr = 30–46 ns, offering lower forward drop than most 55 V Schottkys but slower recovery. It is suitable for synchronous rectification in sub-300 kHz applications but not recommended above 500 kHz where Schottky or GaN-based solutions provide lower Q_rr and EMI.

Is IRF1405ZLPBF RoHS-compliant and lead-free?

Yes. The "Z" suffix and "PbF" designation confirm full compliance with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 3 moisture sensitivity. The device uses matte tin plating and lead-free solder compatible with standard reflow profiles (peak 260°C).

IRF1405ZLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4780 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF1405ZLPBF FAQ

1.How can I place an order for IRF1405ZLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1405ZLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1405ZLPBF reliable?

The price and inventory of IRF1405ZLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1405ZLPBF is usually 5 days.

3.What payment methods are accepted for IRF1405ZLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1405ZLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1405ZLPBF?

IRF1405ZLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1405ZLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1405ZLPBF?

For technical support, including IRF1405ZLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1405ZLPBF requirements.

6.How does Aetrix verify that IRF1405ZLPBF is sourced from the original manufacturer or authorized distributors?

All IRF1405ZLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1405ZLPBF meets industry standards.

7.What is the process for return or replacement of IRF1405ZLPBF?

All IRF1405ZLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1405ZLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1405ZLPBF part is unused and in its original packaging.

Return procedure for IRF1405ZLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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