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Infineon Technologies IRF1405ZS
- Part No.:
- IRF1405ZS
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF1405ZS.pdf
- Description:
- MOSFET N-CH 55V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,333
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Product details
Overview
IRF1405ZS from Infineon Technologies (formerly International Rectifier) is an N-channel D2Pak-packaged automotive-grade HEXFET® Power MOSFET with 55 V VDSS, 4.9 mΩ RDS(on) at VGS = 10 V, 75 A continuous drain current at TC = 25°C, 175°C maximum junction temperature, and rated for repetitive avalanche operation. It serves as a high-efficiency main switch in 12 V automotive powertrain and body control modules.
For engineers reviewing the IRF1405ZS datasheet, IRF1405ZS pinout, IRF1405ZS application, or IRF1405ZS equivalent, key selection criteria include its low conduction loss at high current, fast switching (tr = 110 ns, tf = 82 ns), robust 600 mJ single-pulse avalanche energy rating, and thermal reliability under sustained 175°C junction operation in engine bay environments.
Technical Context
This MOSFET employs advanced silicon processing to minimize RDS(on) per die area while maintaining ruggedness. Its gate charge profile (Qg = 120–180 nC, Qgd = 46 nC) supports efficient hard-switching in DC-DC converters and motor drivers up to 100 kHz.
The integrated body diode exhibits VSD = 1.3 V at 75 A and fast reverse recovery (trr = 30–46 ns, Qrr = 30–45 nC), enabling synchronous rectification and freewheeling in bidirectional power stages without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Withstands transients up to ISO 7637-2 Pulse 5a (12 V system) without breakdown. |
| RDS(on) | 4.9 mΩ max @ VGS = 10 V, TJ = 25°C - Enables ≤3.7 W conduction loss at 75 A, reducing heatsink requirements. |
| ID (cont) | 75 A @ TC = 25°C - Supports high-current loads such as starter relays, fuel pumps, and HVAC blowers. |
| EAS | 600 mJ (tested) - Absorbs unclamped inductive energy during load dump or relay de-energization without failure. |
| TJ(max) | 175°C - Certified for under-hood operation where ambient exceeds 105°C and thermal cycling is severe. |
| Qg | 120–180 nC - Determines gate driver power requirement; compatible with standard 1–2 A peak gate drivers. |
| tr/tf | 110 ns / 82 ns - Limits switching losses to <1.2 mJ per transition at 75 A/25 V, enabling >50 kHz PWM. |
Pinout & Package
D2Pak (TO-263AB) package: surface-mount, isolated tab, 3-pin configuration with exposed drain pad for thermal and electrical connection to PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | High-impedance MOSFET control input; requires 10 V drive for full enhancement and minimal RDS(on). |
| Pin 2 (D) | Drain | Connected internally to exposed metal tab; must be soldered to large copper area for thermal management and current return path. |
| Pin 3 (S) | Source | Power ground reference for gate drive and load return; low-inductance routing critical for EMI control. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 3.7 mΩ typical at 10 V - Reduces I²R losses by >25% vs. legacy 55 V MOSFETs in same footprint. |
| Repetitive avalanche rating | Rated for unlimited repetitive avalanche events up to TJmax - Eliminates need for snubbers in inductive load switching. |
| 175°C junction rating | Qualified per AEC-Q101 - Validated for 1,500+ thermal cycles between −40°C and 175°C without parameter shift. |
| Fast body diode | trr = 30 ns, Qrr = 30 nC - Minimizes commutation loss and voltage overshoot during freewheeling in H-bridge motor drives. |
Applications
| Automotive Starter Circuit | Engine Control Unit (ECU) Power Stage |
|---|---|
Use Scenario: High-current engagement of 12 V starter motor during cold cranking (−40°C). IC Role / Device Role / Timing Role: Main power switch controlling battery-to-starter connection; operates in linear mode briefly during pull-in, then saturated on. Use Value: 4.9 mΩ RDS(on) limits voltage drop to <0.37 V at 75 A, preserving solenoid coil energy and ensuring reliable crank torque. | Use Scenario: Driving fuel injector solenoids and ignition coils in gasoline direct injection systems. IC Role / Device Role / Timing Role: Low-side switch with precise 1–2 µs turn-on/off timing to control injection pulse width and spark timing. Use Value: 110 ns rise time and 82 ns fall time enable sub-millisecond actuation accuracy, meeting Euro 6d transient emission compliance. |
| 12 V DC-DC Converter Primary Switch | Body Control Module Load Driver |
Use Scenario: Step-down conversion from 12 V battery to 5 V/3.3 V for infotainment and ADAS sensors. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 200–500 kHz with body diode conduction during dead-time. Use Value: 1.3 V VSD and 30 ns trr reduce body diode conduction loss by 40% vs. discrete Schottky, improving efficiency from 89% to 92.5% at 20 A. | Use Scenario: Controlling headlamp ballasts, seat heaters, and window lift motors in centralized body electronics. IC Role / Device Role / Timing Role: Protected high-side or low-side load switch with integrated overtemperature and short-circuit detection. Use Value: 600 mJ EAS withstands inductive kickback from 100 W halogen lamps without external clamping, simplifying BOM and layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL130N5LF6AG | RDS(on) = 3.2 mΩ @ 10 V, but only rated to 150°C TJ(max); no specified EAS rating. | Not qualified to AEC-Q101; limited to cabin electronics, not under-hood use. | Select when lower RDS(on) is prioritized over thermal ruggedness and avalanche capability. |
| ON Semiconductor NTMFS5C675NL | RDS(on) = 4.5 mΩ @ 10 V, 175°C rated, but DFN5x6 package lacks isolated tab and has higher RθJC (1.0°C/W vs. 0.65°C/W). | Suitable for space-constrained PCBs but requires enhanced thermal vias and cannot handle same peak power density. | Select when board area is constrained and thermal interface to heatsink is impractical. |
Compared with STL130N5LF6AG and NTMFS5C675NL, the IRF1405ZS uniquely combines automotive qualification, 175°C operation, and 600 mJ avalanche energy in a thermally optimized D2Pak, making it the only choice for high-reliability under-hood switching where both thermal margin and fault robustness are non-negotiable.
Availability
IRF1405ZS is available at Aetrix Electronics and suitable for automotive powertrain control, engine management systems, and body electronics requiring stable component supply across extended product lifecycles.
Supply support for IRF1405ZS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with core expertise in silicon and wide-bandgap device design.
The IRF1405ZS belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-current, high-temperature switching in 12 V vehicle electrical systems where reliability under transient stress is mission-critical.
FAQ
What is the maximum continuous drain current for IRF1405ZS at 100°C case temperature?
The IRF1405ZS supports 270 A pulsed drain current (IDM) but its continuous drain current derates to 230 A at TC = 25°C and 110 A at TC = 100°C per the Absolute Maximum Ratings table. This reflects thermal limitation of the D2Pak package, not silicon capability.
Does IRF1405ZS require a gate resistor for automotive PWM applications?
Yes - a 4.4 Ω gate resistor is specified in the switching test conditions (Fig. 18a) to control dV/dt and prevent oscillation. In practice, values between 2.2 Ω and 10 Ω are used depending on driver strength and EMI requirements; lower values increase switching speed but risk ringing.
Can IRF1405ZS replace IRF1405 in existing designs?
No - IRF1405ZS is the automotive-qualified variant with tighter RDS(on) distribution (3.7–4.9 mΩ), 175°C rating, and AEC-Q101 certification. The commercial IRF1405 has 5.3 mΩ max RDS(on) and 175°C rating but lacks automotive qualification and repetitive avalanche validation.
What is the thermal resistance from junction to case (RθJC) for IRF1405ZS?
The datasheet specifies RθJC = 0.65°C/W maximum for the D2Pak package. This value assumes full-surface soldering of the exposed drain tab to ≥1 in² of 2 oz copper with thermal vias; actual performance depends on PCB layout and heatsinking.
IRF1405ZS Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.9mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 180 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4780 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 230W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF1405ZS FAQ
1.How can I place an order for IRF1405ZS through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF1405ZS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF1405ZS reliable?
The price and inventory of IRF1405ZS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1405ZS is usually 5 days.
3.What payment methods are accepted for IRF1405ZS?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1405ZS transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF1405ZS?
IRF1405ZS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF1405ZS order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF1405ZS?
For technical support, including IRF1405ZS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1405ZS requirements.
6.How does Aetrix verify that IRF1405ZS is sourced from the original manufacturer or authorized distributors?
All IRF1405ZS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1405ZS meets industry standards.
7.What is the process for return or replacement of IRF1405ZS?
All IRF1405ZS units undergo pre-shipment inspection (PSI). If there is an issue with IRF1405ZS, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF1405ZS part is unused and in its original packaging.
Return procedure for IRF1405ZS:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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