Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1405ZSPBF

Name: IRF1405ZSPBF
Brand: Infineon Technologies
SKU: IRF1405ZSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF1405ZSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1405ZSPBF.pdf

Description:: MOSFET N-CH 55V 75A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,447

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF1405ZSPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263) package, rated for 55 V V_DSS, 4.9 mΩ R_DS(on) at V_GS = 10 V, and 75 A continuous drain current at T_C = 25°C. It features 175°C junction temperature rating, fast switching (t_r = 110 ns), and tested repetitive avalanche capability up to T_jmax, making it suitable for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF1405ZSPBF datasheet, IRF1405ZSPBF pinout, IRF1405ZSPBF application, or IRF1405ZSPBF equivalent, key selection criteria include on-resistance vs. thermal derating, gate charge (Q_g = 120–180 nC), body diode recovery (Q_rr = 30–45 nC), and avalanche energy rating (E_AS = 150 mJ).

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss per unit area while maintaining robustness under transient overloads. Its low R_DS(on) of 3.7–4.9 mΩ and high ID capability (75 A) enable efficient operation in high-current, medium-voltage power stages such as synchronous rectifiers and battery protection circuits.

The device integrates a co-packaged body diode with V_SD ≤ 1.3 V and t_rr = 30–46 ns, supporting moderate-frequency hard-switching topologies. Thermal design is enabled by R_θJC = 0.65°C/W and validated repetitive avalanche performance up to I_AS = 75 A with L = 0.10 mH.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; defines upper limit for bus voltage in buck converters and H-bridge drivers.
R_DS(on)	4.9 mΩ max @ V_GS = 10 V - Directly determines I²R conduction loss; enables <1.5 W loss at 75 A DC.
I_D (cont)	75 A @ T_C = 25°C - Continuous current handling capacity when case is actively cooled; limited to 270 A pulsed (I_DM).
Q_g	120–180 nC - Total gate charge required for full turn-on; impacts driver sizing and switching loss in PWM applications.
E_AS	150 mJ - Single-pulse avalanche energy rating; supports unclamped inductive switching without failure if T_j ≤ 175°C.
t_r/t_f	110 ns / 82 ns - Rise/fall times define minimum practical switching frequency and EMI profile in hard-switched topologies.
T_J max	175°C - Maximum allowable junction temperature; sets thermal margin for heatsink design and derating curves.

Pinout & Package

IRF1405ZSPBF uses the surface-mount D2Pak (TO-263) package with three terminals: Drain (tab), Source (pins 2 & 3), and Gate (pin 1). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface to PCB copper or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path and thermal interface	Electrically connected to internal die drain; requires soldered thermal pad for R_θJC = 0.65°C/W performance.
Source (Pins 2 & 3)	Return path for load current and gate reference	Low-inductance dual-pin layout minimizes source loop inductance during switching transitions.
Gate (Pin 1)	Control terminal for channel modulation	High-impedance input requiring 10 V for full enhancement; Q_gs = 31 nC and Q_gd = 46 nC define Miller effect timing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.9 mΩ enables <1.5 W conduction loss at 75 A, reducing heatsink requirements in high-current 12–48 V systems.
175°C junction rating	Extends operational margin in sealed enclosures or high-ambient environments without derating to 150°C.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to I_AS = 75 A, eliminating need for external snubbers in motor drive flyback paths.
Fast body diode recovery	Q_rr = 30–45 nC and t_rr = 30–46 ns reduce reverse recovery loss and EMI in synchronous rectification and bidirectional DC-DC stages.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: High-efficiency 12 V to 5 V/3.3 V point-of-load converter delivering up to 60 A.

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 200–500 kHz with gate drive synchronized to low-side FET.

Use Value: 4.9 mΩ R_DS(on) reduces conduction loss to <1.5 W, enabling compact thermal design without forced air cooling.

Use Scenario: 24 V brushed motor control in industrial actuators with peak currents up to 75 A.

IC Role / Device Role / Timing Role: Half-bridge high-side switch with body diode conducting freewheeling current during PWM off-time.

Use Value: Tested repetitive avalanche allows safe operation during motor inductive kickback without external clamping diodes.

UPS Inverter Stage

Battery Protection Circuit

Use Scenario: 48 V battery-fed pure-sine inverter output stage delivering 1 kVA with low THD.

IC Role / Device Role / Timing Role: Low-loss switching element in full-bridge topology with gate drive optimized for 10–20 kHz SPWM.

Use Value: Fast t_r/t_f (110/82 ns) and low Q_g support clean edge fidelity and reduced switching loss at higher frequencies.

Use Scenario: Smart battery pack with overcurrent and short-circuit protection for Li-ion stacks.

IC Role / Device Role / Timing Role: Solid-state main disconnect switch placed between battery cell stack and load terminals.

Use Value: 175°C T_j rating ensures reliable operation during sustained fault conditions where thermal shutdown must be delayed for system diagnostics.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	R_DS(on) = 10.5 mΩ @ 10 V; V_DSS = 75 V; TO-220 package	Higher voltage rating but double R_DS(on); larger package footprint and higher R_θJA	Select when 75 V blocking is required and thermal budget permits higher conduction loss.
IXTP75N055T	R_DS(on) = 5.5 mΩ @ 10 V; V_DSS = 55 V; TO-220 package; lower Q_g (100 nC)	Same voltage/current class but through-hole mounting; slightly higher R_DS(on) and no avalanche rating	Select for legacy through-hole designs where D2Pak rework is impractical and avalanche robustness is not critical.

Compared with STP75NF75 and IXTP75N055T, IRF1405ZSPBF offers the lowest R_DS(on) in surface-mount form with verified repetitive avalanche capability-critical for motor drives and UPS inverters where inductive stress is routine.

Availability

IRF1405ZSPBF is available at Aetrix Electronics and suitable for high-current DC-DC converters, brushed DC motor drivers, and UPS inverter stages requiring stable component supply and long-term production continuity.

Supply support for IRF1405ZSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap power devices.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability power conversion in industrial motor drives, renewable energy inverters, and server power supplies-prioritizing low R_DS(on), rugged avalanche behavior, and thermal robustness.

FAQ

What is the maximum continuous drain current for IRF1405ZSPBF at 100°C case temperature?

The maximum continuous drain current drops to 270 A at T_C = 100°C only under pulsed conditions (I_DM). For continuous operation, the datasheet specifies 230 A at T_C = 100°C with V_GS = 10 V. This reflects thermal limitation-not silicon current density-and assumes adequate heatsinking to maintain case temperature.

Does IRF1405ZSPBF have a specified gate threshold voltage range?

Yes, V_GS(th) is specified as 2.0 V minimum to 4.0 V maximum at T_J = 25°C and I_D = 250 µA. This range ensures consistent turn-on behavior across production lots and supports compatibility with standard 3.3 V and 5 V logic-level gate drivers when used with appropriate margin.

Can IRF1405ZSPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see Fig. 10) enables inherent current sharing when paralleled. Designers must match gate drive impedance and layout symmetry to minimize dynamic imbalance; typical practice uses individual 10 Ω gate resistors and Kelvin-source routing to ensure equalized switching.

Is the body diode in IRF1405ZSPBF suitable for synchronous rectification?

No-the integrated body diode has relatively high V_SD (≤1.3 V) and moderate Q_rr (30–45 nC), making it unsuitable for high-frequency synchronous rectification where low forward drop and ultrafast recovery are essential. External Schottky or GaN FETs are preferred for that role.

IRF1405ZSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4780 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1405ZSPBF FAQ

1.How can I place an order for IRF1405ZSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1405ZSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1405ZSPBF reliable?

The price and inventory of IRF1405ZSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1405ZSPBF is usually 5 days.

3.What payment methods are accepted for IRF1405ZSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1405ZSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1405ZSPBF?

IRF1405ZSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1405ZSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1405ZSPBF?

For technical support, including IRF1405ZSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1405ZSPBF requirements.

6.How does Aetrix verify that IRF1405ZSPBF is sourced from the original manufacturer or authorized distributors?

All IRF1405ZSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1405ZSPBF meets industry standards.

7.What is the process for return or replacement of IRF1405ZSPBF?

All IRF1405ZSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1405ZSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1405ZSPBF part is unused and in its original packaging.

Return procedure for IRF1405ZSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…