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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1405ZSTRL7PP

Name: IRF1405ZSTRL7PP
Brand: Infineon Technologies
SKU: IRF1405ZSTRL7PP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1405ZSTRL7PP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Datasheet:: IRF1405ZSTRL7PP.pdf

Description:: MOSFET N-CH 55V 120A D2PAK

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Product details

Overview

IRF1405ZSTRL7PP from Infineon Technologies (formerly International Rectifier) is an N-channel D2PAK-7 (TO-263-7) surface-mount HEXFET® Power MOSFET rated for 55 V V_DS, 4.9 mΩ R_DS(on) at V_GS = 10 V, and 120 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 140 ns, t_f = 130 ns), and tested repetitive avalanche capability up to T_jmax. It is used in high-current DC-DC converters, motor drive half-bridges, and industrial power supplies.

For engineers reviewing the IRF1405ZSTRL7PP datasheet, IRF1405ZSTRL7PP pinout, IRF1405ZSTRL7PP application, or IRF1405ZSTRL7PP equivalent, key selection criteria include its low R_DS(on) at high current, thermal robustness in PCB-mounted operation, avalanche-rated reliability under inductive switching, and D2PAK-7 package compatibility with high-power thermal management layouts.

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per die area while maintaining rugged unclamped inductive switching performance. Its gate charge profile (Q_g = 150–230 nC, Q_gd = 64 nC) supports efficient high-frequency PWM control in synchronous buck stages and H-bridge inverters.

The device integrates a co-packaged body diode with V_SD = 1.3 V at 88 A and t_rr = 63–95 ns, enabling reliable freewheeling in hard-switched topologies. Thermal design is supported by R_θJC = 0.65°C/W and R_θJA = 40°C/W (PCB mount), with linear derating above 25°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage in high-side or low-side switch configurations without breakdown.
R_DS(on)	4.9 mΩ max @ V_GS = 10 V, T_J = 25°C - Enables <1 W conduction loss at 100 A, critical for >95% efficiency in 12–48 V systems.
I_D (cont)	120 A @ T_C = 25°C - Supports high-current output stages in server VRMs and UPS inverters with minimal parallel devices.
E_AS	250 mJ (tested) - Guarantees single-pulse unclamped inductive energy handling without failure, essential for motor drive fault tolerance.
t_r/t_f	140 ns / 130 ns - Allows clean 200–500 kHz switching with low overlap loss, reducing gate driver stress and EMI generation.
T_J max	175°C - Permits sustained operation in thermally constrained enclosures and enables derated use up to 150°C ambient with proper heatsinking.
Q_g	150–230 nC - Determines required gate driver peak current (e.g., ≥3 A for 100 ns turn-on) and influences switching loss trade-offs.

Pinout & Package

IRF1405ZSTRL7PP uses the D2PAK-7 (TO-263-7) surface-mount package with exposed drain pad for enhanced thermal conduction and seven terminals: three drain pins (D1–D3), three source pins (S1–S3), and one gate pin (G). The package is optimized for high-current PCB mounting with solderable thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
D1–D3	Drain (parallel-connected)	Collects high-current return path; low-inductance layout minimizes voltage spikes during dI/dt transients.
S1–S3	Source (parallel-connected)	Provides low-impedance return for load current and gate drive reference; reduces common-source inductance.
G	Gate	Controls channel conduction; requires ≤±20 V drive and careful routing to avoid oscillation due to Miller effect (Q_gd = 64 nC).

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.9 mΩ max enables <1.2 W conduction loss at 100 A, reducing heatsink size and system footprint.
175°C junction rating	Allows full-rated current operation at elevated ambient temperatures (e.g., 85°C enclosure) with margin for transient overloads.
Repetitive avalanche capability	Tested to 250 mJ single-pulse and validated for repetitive operation up to T_jmax, supporting robust motor drive protection.
Fast switching with low Q_gd	64 nC Miller charge limits dv/dt-induced turn-on risk and enables stable 300+ kHz operation with standard gate drivers.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3), suitable for standard reflow profiles without special baking.

Applications

Industrial Motor Drives

Server & Telecom DC-DC Converters

Use Scenario: Half-bridge inverter stage driving 3-phase BLDC motors in HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: Low-side switching element handling 80–120 A peak phase current with 20 kHz PWM.

Use Value: Low R_DS(on) and high avalanche energy reduce thermal stress during regenerative braking and short-circuit events.

Use Scenario: Synchronous rectifier in 48 V → 12 V intermediate bus converter for AI accelerators.

IC Role / Device Role / Timing Role: High-current secondary-side switch operating at 300 kHz with tight duty cycle control.

Use Value: Fast t_r/t_f and low Q_g minimize switching losses while maintaining ZVS compatibility.

Uninterruptible Power Supplies

EV Onboard Chargers (OBC)

Use Scenario: Bidirectional DC-AC inverter stage in line-interactive UPS systems delivering 2–5 kVA output.

IC Role / Device Role / Timing Role: High-side switch in full-bridge topology managing 100 A RMS output current.

Use Value: 175°C T_J rating ensures reliability during extended battery backup operation with limited airflow.

Use Scenario: Primary-side switching transistor in LLC resonant converter of 6.6 kW OBC.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in asymmetric half-bridge configuration at 100–200 kHz.

Use Value: Repetitive avalanche rating protects against voltage overshoot during resonant tank mismatches and startup faults.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-current power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP120N55F7	R_DS(on) = 4.5 mΩ (typ), Q_g = 170 nC, T_J max = 175°C, TO-220FP package	Lower thermal resistance in through-hole mounting but lacks D2PAK-7's multi-pin current sharing and PCB thermal pad	Preferred for prototyping or lower-volume designs where manual assembly and heatsink clamping are acceptable
IXFH120N55X3	R_DS(on) = 4.2 mΩ (typ), Q_g = 195 nC, T_J max = 175°C, TO-247 package	Higher peak current rating (140 A) and superior R_θJC (0.45°C/W), but larger footprint and higher cost	Recommended when >120 A continuous current or >200 W dissipation demands superior thermal headroom

Compared with STP120N55F7 and IXFH120N55X3, IRF1405ZSTRL7PP offers optimal balance of low-profile surface-mount integration, multi-terminal current distribution, and proven avalanche ruggedness-making it especially suited for high-density, high-reliability power modules where board space and thermal interface consistency are critical.

Availability

IRF1405ZSTRL7PP is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for IRF1405ZSTRL7PP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial, computing, and renewable energy systems where thermal resilience and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for IRF1405ZSTRL7PP at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 75 A, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK-7 package and must be applied when ambient or heatsink conditions prevent maintaining T_C ≤ 25°C. Designers should verify junction temperature using R_θJC = 0.65°C/W and actual power dissipation.

Does IRF1405ZSTRL7PP have a built-in body diode, and what are its key parameters?

Yes, it integrates a planar vertical body diode with V_SD = 1.3 V max at I_S = 88 A and T_J = 25°C, reverse recovery time t_rr = 63–95 ns, and Q_rr = 160–240 nC. These values are measured under standardized conditions (V_DD = 28 V, I_S = 88 A, di/dt = 100 A/μs) and support freewheeling in hard-switched topologies without external diodes.

Can IRF1405ZSTRL7PP be used in avalanche mode, and is it tested for this condition?

Yes, IRF1405ZSTRL7PP is fully characterized for both single-pulse (E_AS = 250 mJ, tested) and repetitive avalanche operation up to T_jmax = 175°C. The datasheet provides validated curves (Figures 12a–12c, 15, 16) and application note AN-1005 details safe operating boundaries based on pulse width, starting temperature, and thermal impedance.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) ranges from 2.0 V to 4.0 V at T_J = 25°C, with a positive temperature coefficient of +0.054 V/°C. As junction temperature rises, threshold voltage increases-reducing risk of thermal runaway in parallel configurations. At 175°C, V_GS(th) typically reaches ~3.5 V, requiring sufficient gate drive margin above this value for reliable turn-on.

IRF1405ZSTRL7PP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 88A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1405ZSTRL7PP FAQ

1.How can I place an order for IRF1405ZSTRL7PP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1405ZSTRL7PP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1405ZSTRL7PP reliable?

The price and inventory of IRF1405ZSTRL7PP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1405ZSTRL7PP is usually 5 days.

3.What payment methods are accepted for IRF1405ZSTRL7PP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1405ZSTRL7PP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1405ZSTRL7PP?

IRF1405ZSTRL7PP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1405ZSTRL7PP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1405ZSTRL7PP?

For technical support, including IRF1405ZSTRL7PP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1405ZSTRL7PP requirements.

6.How does Aetrix verify that IRF1405ZSTRL7PP is sourced from the original manufacturer or authorized distributors?

All IRF1405ZSTRL7PP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1405ZSTRL7PP meets industry standards.

7.What is the process for return or replacement of IRF1405ZSTRL7PP?

All IRF1405ZSTRL7PP units undergo pre-shipment inspection (PSI). If there is an issue with IRF1405ZSTRL7PP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1405ZSTRL7PP part is unused and in its original packaging.

Return procedure for IRF1405ZSTRL7PP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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